Sub-nanosecond memristor based on ferroelectric tunnel junction

doi:10.1038/s41467-020-15249-1

HFCAS OpenIR

	Sub-nanosecond memristor based on ferroelectric tunnel junction
其他题名	Sub-nanosecond memristor based on ferroelectric tunnel junction
	Ma, Chao 1,2; Luo, Zhen 1,2; Huang, Weichuan 1,2; Zhao, Letian 1,2; Chen, Qiaoling 1,2; Lin, Yue 1,2; Liu, Xiang 1,2; Chen, Zhiwei 1,2; Liu, Chuanchuan 1,2; Sun, Haoyang 1,2; Jin, Xi 1,2; Yin, Yuewei 1,2; Li, Xiaoguang 1,2,3,4
	2020-03-18
发表期刊	NATURE COMMUNICATIONS
ISSN	2041-1723
通讯作者	Yin, Yuewei(yyw@ustc.edu.cn) ; Li, Xiaoguang(lixg@ustc.edu.cn)
摘要	Next-generation non-volatile memories with ultrafast speed, low power consumption, and high density are highly desired in the era of big data. Here, we report a high performance memristor based on a Ag/BaTiO3/Nb:SrTiO3 ferroelectric tunnel junction (FTJ) with the fastest operation speed (600ps) and the highest number of states (32 states or 5 bits) per cell among the reported FTJs. The sub-nanosecond resistive switching maintains up to 358K, and the write current density is as low as 4x10(3)Acm(-2). The functionality of spike-timing-dependent plasticity served as a solid synaptic device is also obtained with ultrafast operation. Furthermore, it is demonstrated that a Nb:SrTiO3 electrode with a higher carrier concentration and a metal electrode with lower work function tend to improve the operation speed. These results may throw light on the way for overcoming the storage performance gap between different levels of the memory hierarchy and developing ultrafast neuromorphic computing systems. Memristor devices based on ferroelectric tunnel junctions are promising, but suffer from quite slow switching times. Here, the authors report on ultrafast switching times at and above room temperature of 600ps in Ag/BaTiO3/Nb:SrTiO3 based ferroelectric tunnel junctions.
其他摘要	Next-generation non-volatile memories with ultrafast speed, low power consumption, and high density are highly desired in the era of big data. Here, we report a high performance memristor based on a Ag 3 3 ferroelectric tunnel junction (FTJ) with the fastest operation speed (600?ps) and the highest number of states (32 states or 5 bits) per cell among the reported FTJs. The sub-nanosecond resistive switching maintains up to 358?K, and the write current density is as low as 4?×?10 3 ?A?cm ?2 . The functionality of spike-timing-dependent plasticity served as a solid synaptic device is also obtained with ultrafast operation. Furthermore, it is demonstrated that a Nb:SrTiO 3 electrode with a higher carrier concentration and a metal electrode with lower work function tend to improve the operation speed. These results may throw light on the way for overcoming the storage performance gap between different levels of the memory hierarchy and developing ultrafast neuromorphic computing systems.
DOI	10.1038/s41467-020-15249-1
关键词[WOS]	MEMORY ; ELECTRORESISTANCE ; FIELD
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China[51790491] ; National Natural Science Foundation of China[51622209] ; National Natural Science Foundation of China[21521001] ; National Natural Science Foundation of China[51972296] ; National Key Research and Development Program of China[2016YFA0300103] ; National Key Research and Development Program of China[2019YFA0307900]
项目资助者	National Natural Science Foundation of China ; National Key Research and Development Program of China
WOS研究方向	Science & Technology - Other Topics
WOS类目	Multidisciplinary Sciences
WOS记录号	WOS:000522032300016
出版者	NATURE PUBLISHING GROUP
引用统计	被引频次：170[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.hfcas.ac.cn:8080/handle/334002/103584
专题	中国科学院合肥物质科学研究院
通讯作者	Yin, Yuewei; Li, Xiaoguang
作者单位	1.Univ Sci & Technol China, Dept Phys, Hefei Natl Lab Phys Sci Microscale, Hefei, Peoples R China 2.Univ Sci & Technol China, CAS Key Lab Strongly Coupled Quantum Matter Phys, Hefei, Peoples R China 3.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei, Peoples R China 4.Collaborat Innovat Ctr Adv Microstruct, Nanjing, Peoples R China
推荐引用方式 GB/T 7714	Ma, Chao,Luo, Zhen,Huang, Weichuan,et al. Sub-nanosecond memristor based on ferroelectric tunnel junction[J]. NATURE COMMUNICATIONS,2020,11.
APA	Ma, Chao.,Luo, Zhen.,Huang, Weichuan.,Zhao, Letian.,Chen, Qiaoling.,...&Li, Xiaoguang.(2020).Sub-nanosecond memristor based on ferroelectric tunnel junction.NATURE COMMUNICATIONS,11.
MLA	Ma, Chao,et al."Sub-nanosecond memristor based on ferroelectric tunnel junction".NATURE COMMUNICATIONS 11(2020).