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Discharge simulation and volt-second consumption analysis during ramp-up on the CFETR tokamak
Liu, Cheng-Yue1,2; Wu, Bin2; Qian, Jin-Ping2; Li, Guo-Qiang2; Hou, Ya-Wei3; Wei, Wei1; Chen, Mei-Xia1; Lei, Ming-Zhun2; Guo, Yong2
2020
发表期刊CHINESE PHYSICS B
ISSN1674-1056
通讯作者Guo, Yong(yguo@ipp.ac.cn)
摘要The plasma current ramp-up is an important process for tokamak discharge, which directly affects the quality of the plasma and the system resources such as volt-second consumption and plasma current profile. The China Fusion Engineering Test Reactor (CFETR) ramp-up discharge is predicted with the tokamak simulation code (TSC). The main plasma parameters, the plasma configuration evolution and coil current evolution are given out. At the same time, the volt-second consumption during CFETR ramp-up is analyzed for different plasma shaping times and different plasma current ramp rates dI(P)/dt with/without assisted heating. The results show that the earlier shaping time and the faster plasma current ramp rate with auxiliary heating will enable the volt-second to save 5%-10%. At the same time, the system ability to provide the volt-second is probably 470 V.s. These simulations will give some reference to engineering design for CFETR to some degree.
关键词plasma current ramp-up China Fusion Engineering Test Reactor tokamak simulation code volt-second consumption
DOI10.1088/1674-1056/ab610d
关键词[WOS]OHMIC DISCHARGES
收录类别SCI
语种英语
资助项目National Key Research and Development Program of China[2017YFE0300500] ; National Key Research and Development Program of China[2017YFE0300501] ; National Natural Science Foundation of China[11875290] ; National Natural Science Foundation of China[11875253] ; Fundamental Research Funds for the Central Universities of China[WK3420000004]
项目资助者National Key Research and Development Program of China ; National Natural Science Foundation of China ; Fundamental Research Funds for the Central Universities of China
WOS研究方向Physics
WOS类目Physics, Multidisciplinary
WOS记录号WOS:000526963100001
出版者IOP PUBLISHING LTD
引用统计
被引频次:3[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.hfcas.ac.cn:8080/handle/334002/103650
专题中国科学院合肥物质科学研究院
通讯作者Guo, Yong
作者单位1.Hefei Univ Technol, Sch Elect Sci & Appl Phys, Phys Dept, Hefei 230601, Peoples R China
2.Chinese Acad Sci, Inst Plasma Phys, Hefei 230026, Peoples R China
3.Univ Sci & Technol China, Hefei 230031, Peoples R China
第一作者单位中科院等离子体物理研究所
通讯作者单位中科院等离子体物理研究所
推荐引用方式
GB/T 7714
Liu, Cheng-Yue,Wu, Bin,Qian, Jin-Ping,et al. Discharge simulation and volt-second consumption analysis during ramp-up on the CFETR tokamak[J]. CHINESE PHYSICS B,2020,29.
APA Liu, Cheng-Yue.,Wu, Bin.,Qian, Jin-Ping.,Li, Guo-Qiang.,Hou, Ya-Wei.,...&Guo, Yong.(2020).Discharge simulation and volt-second consumption analysis during ramp-up on the CFETR tokamak.CHINESE PHYSICS B,29.
MLA Liu, Cheng-Yue,et al."Discharge simulation and volt-second consumption analysis during ramp-up on the CFETR tokamak".CHINESE PHYSICS B 29(2020).
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