Investigation on the influence of the gas flow mode around substrate on the deposition of diamond films in an overmoded MPCVD reactor chamber

doi:10.1016/j.vacuum.2020.109659

HFCAS OpenIR

	Investigation on the influence of the gas flow mode around substrate on the deposition of diamond films in an overmoded MPCVD reactor chamber
	Wang, B.1; Weng, J.1; Wang, Z. T.1; Wang, J. H.1,2; Liu, F.1 ; Xiong, L. W.1
	2020-12-01
发表期刊	VACUUM
ISSN	0042-207X
通讯作者	Weng, J.(14101201@wit.edu.cn)
摘要	In an overmoded home-made MPCVD reactor, the influence of gas flow mode on the deposition of diamond films was investigated with H2/CH4 gas mixtures at the microwave power of 5800 W. The simulation results show that the diamond films can be grown in the environment filled with the gas mixture with relative high gas flow rate when an improved gas flow mode is established around the substrate. The scanning electron microscope and Raman spectra indicate that the improved gas flow mode plays a role in the growth of well-faceted crystals at the edge area of the diamond films. The quality, growth rate and uniformity of the diamond films can be significantly improved when introducing the improved gas flow mode. To explain the experimental results, the plasma is measured by optical emission spectrometer. It is shown that in the improved gas flow mode, the activated species of C-2 and H in the plasma exhibit a uniform distribution. Furthermore the improved gas flow mode enlarges the area of the region where the concentrations of activated C-2 and H are coupled. The diamond films with 50.8 mm and 101.6 mm in diameter have been finally deposited in the improved gas flow mode.
关键词	Gas flow mode Diamond films Uniformity Microwave plasma Chemical vapor deposition
DOI	10.1016/j.vacuum.2020.109659
关键词[WOS]	MICROWAVE PLASMA CVD ; CHEMICAL-VAPOR-DEPOSITION ; SINGLE-CRYSTAL DIAMOND ; LARGE-AREA DEPOSITION ; THIN-FILMS ; QUALITY ; GROWTH ; COATINGS ; NITROGEN ; POWER
收录类别	SCI
语种	英语
资助项目	Natural Science Foundation of China[51402220] ; Research Fund of Wuhan Institute of Technology[K201506]
项目资助者	Natural Science Foundation of China ; Research Fund of Wuhan Institute of Technology
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000582757100008
出版者	PERGAMON-ELSEVIER SCIENCE LTD
引用统计	被引频次：11[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.hfcas.ac.cn:8080/handle/334002/104855
专题	中国科学院合肥物质科学研究院
通讯作者	Weng, J.
作者单位	1.Wuhan Inst Technol, Key Lab Plasma Chem & Adv Mat Hubei Prov, Wuhan 430205, Peoples R China 2.Chinese Acad Sci, Inst Plasma Phys, Hefei 230031, Peoples R China
推荐引用方式 GB/T 7714	Wang, B.,Weng, J.,Wang, Z. T.,et al. Investigation on the influence of the gas flow mode around substrate on the deposition of diamond films in an overmoded MPCVD reactor chamber[J]. VACUUM,2020,182.
APA	Wang, B.,Weng, J.,Wang, Z. T.,Wang, J. H.,Liu, F.,&Xiong, L. W..(2020).Investigation on the influence of the gas flow mode around substrate on the deposition of diamond films in an overmoded MPCVD reactor chamber.VACUUM,182.
MLA	Wang, B.,et al."Investigation on the influence of the gas flow mode around substrate on the deposition of diamond films in an overmoded MPCVD reactor chamber".VACUUM 182(2020).