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Ultralow Thermal Conductivity and Enhanced Figure of Merit for CuSbSe2 via Cd-Doping
Chen, Tao1,2; Ming, Hongwei1,2; Zhang, Baoli1,3; Zhu, Chen1,2; Zhang, Jian1; Zhou, Qi2,4; Li, Di1; Xin, Hongxing1; Qin, Xiaoying1
2021-02-22
Source PublicationACS APPLIED ENERGY MATERIALS
ISSN2574-0962
Corresponding AuthorLi, Di(lidi@issp.ac.cn) ; Xin, Hongxing(xinhongxing@issp.ac.cn) ; Qin, Xiaoying(xyqin@issp.ac.cn)
AbstractThermoelectric properties of CuSb1-xCdxSe2 (x = 0-0.08) compounds, prepared by vacuum melting, were studied at temperatures of 300-675 K. The results indicate that Cd doping causes both remarkable increase in the Seebeck coefficient and drastic drop of lattice thermal conductivity. The enhancement of thermopower originates mainly from increase of electronic density of states, while the drop of lattice thermal conductivity can be ascribed to enhanced phonon scattering by introduced impurity (dopant) atoms. As a consequence, thermoelectric figure of merit ZT is improved with a maximum ZT = 0.55 (at 675 K) being reached for CuSb0.98Cd0.02Se2, which is around 2.2-fold higher than that of the CuSbSe2 pristine compound. Our results indicate that Cd substitution is a feasible way to improve thermoelectric performance of the CuSbSe2-based system.
Keywordthermoelectric performance CuSbSe2 figure of merit thermal conductivity phonon scattering melting process
DOI10.1021/acsaem.0c02820
Indexed BySCI
Language英语
Funding ProjectNatural Science Foundation of China[11674322] ; Natural Science Foundation of China[51672278] ; Natural Science Foundation of China[51972307]
Funding OrganizationNatural Science Foundation of China
WOS Research AreaChemistry ; Energy & Fuels ; Materials Science
WOS SubjectChemistry, Physical ; Energy & Fuels ; Materials Science, Multidisciplinary
WOS IDWOS:000621660800063
PublisherAMER CHEMICAL SOC
Citation statistics
Cited Times:2[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.hfcas.ac.cn:8080/handle/334002/120458
Collection中国科学院合肥物质科学研究院
Corresponding AuthorLi, Di; Xin, Hongxing; Qin, Xiaoying
Affiliation1.Chinese Acad Sci, Inst Solid State Phys, Key Lab Photovolta & Energy Conservat Mat, HFIPS, Hefei 230031, Peoples R China
2.Univ Sci & Technol China, Hefei 230026, Peoples R China
3.Anhui Univ, Inst Phys Sci & Informat Technol, Hefei 230601, Peoples R China
4.Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China
Recommended Citation
GB/T 7714
Chen, Tao,Ming, Hongwei,Zhang, Baoli,et al. Ultralow Thermal Conductivity and Enhanced Figure of Merit for CuSbSe2 via Cd-Doping[J]. ACS APPLIED ENERGY MATERIALS,2021,4.
APA Chen, Tao.,Ming, Hongwei.,Zhang, Baoli.,Zhu, Chen.,Zhang, Jian.,...&Qin, Xiaoying.(2021).Ultralow Thermal Conductivity and Enhanced Figure of Merit for CuSbSe2 via Cd-Doping.ACS APPLIED ENERGY MATERIALS,4.
MLA Chen, Tao,et al."Ultralow Thermal Conductivity and Enhanced Figure of Merit for CuSbSe2 via Cd-Doping".ACS APPLIED ENERGY MATERIALS 4(2021).
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