Ultralow Thermal Conductivity and Enhanced Figure of Merit for CuSbSe2 via Cd-Doping

doi:10.1021/acsaem.0c02820

HFCAS OpenIR

	Ultralow Thermal Conductivity and Enhanced Figure of Merit for CuSbSe2 via Cd-Doping
	Chen, Tao 1,2; Ming, Hongwei 1,2; Zhang, Baoli 1,3; Zhu, Chen 1,2; Zhang, Jian1 ; Zhou, Qi 2,4; Li, Di1 ; Xin, Hongxing1 ; Qin, Xiaoying1
	2021-02-22
Source Publication	ACS APPLIED ENERGY MATERIALS
ISSN	2574-0962
Corresponding Author	Li, Di(lidi@issp.ac.cn) ; Xin, Hongxing(xinhongxing@issp.ac.cn) ; Qin, Xiaoying(xyqin@issp.ac.cn)
Abstract	Thermoelectric properties of CuSb1-xCdxSe2 (x = 0-0.08) compounds, prepared by vacuum melting, were studied at temperatures of 300-675 K. The results indicate that Cd doping causes both remarkable increase in the Seebeck coefficient and drastic drop of lattice thermal conductivity. The enhancement of thermopower originates mainly from increase of electronic density of states, while the drop of lattice thermal conductivity can be ascribed to enhanced phonon scattering by introduced impurity (dopant) atoms. As a consequence, thermoelectric figure of merit ZT is improved with a maximum ZT = 0.55 (at 675 K) being reached for CuSb0.98Cd0.02Se2, which is around 2.2-fold higher than that of the CuSbSe2 pristine compound. Our results indicate that Cd substitution is a feasible way to improve thermoelectric performance of the CuSbSe2-based system.
Keyword	thermoelectric performance CuSbSe2 figure of merit thermal conductivity phonon scattering melting process
DOI	10.1021/acsaem.0c02820
Indexed By	SCI
Language	英语
Funding Project	Natural Science Foundation of China[11674322] ; Natural Science Foundation of China[51672278] ; Natural Science Foundation of China[51972307]
Funding Organization	Natural Science Foundation of China
WOS Research Area	Chemistry ; Energy & Fuels ; Materials Science
WOS Subject	Chemistry, Physical ; Energy & Fuels ; Materials Science, Multidisciplinary
WOS ID	WOS:000621660800063
Publisher	AMER CHEMICAL SOC
Citation statistics	Cited Times:2[WOS] [WOS Record] [Related Records in WOS]
Document Type	期刊论文
Identifier	http://ir.hfcas.ac.cn:8080/handle/334002/120458
Collection	中国科学院合肥物质科学研究院
Corresponding Author	Li, Di; Xin, Hongxing; Qin, Xiaoying
Affiliation	1.Chinese Acad Sci, Inst Solid State Phys, Key Lab Photovolta & Energy Conservat Mat, HFIPS, Hefei 230031, Peoples R China 2.Univ Sci & Technol China, Hefei 230026, Peoples R China 3.Anhui Univ, Inst Phys Sci & Informat Technol, Hefei 230601, Peoples R China 4.Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China
Recommended Citation GB/T 7714	Chen, Tao,Ming, Hongwei,Zhang, Baoli,et al. Ultralow Thermal Conductivity and Enhanced Figure of Merit for CuSbSe2 via Cd-Doping[J]. ACS APPLIED ENERGY MATERIALS,2021,4.
APA	Chen, Tao.,Ming, Hongwei.,Zhang, Baoli.,Zhu, Chen.,Zhang, Jian.,...&Qin, Xiaoying.(2021).Ultralow Thermal Conductivity and Enhanced Figure of Merit for CuSbSe2 via Cd-Doping.ACS APPLIED ENERGY MATERIALS,4.
MLA	Chen, Tao,et al."Ultralow Thermal Conductivity and Enhanced Figure of Merit for CuSbSe2 via Cd-Doping".ACS APPLIED ENERGY MATERIALS 4(2021).

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