Giant photoresponse enhancement in Cr2O3 films by Ni doping-induced insulator-to-semiconductor transition

doi:10.1016/j.ceramint.2021.01.226

HFCAS OpenIR

	Giant photoresponse enhancement in Cr2O3 films by Ni doping-induced insulator-to-semiconductor transition
	Fan, Zihao 1; Zhu, Min 2; Pan, Shusheng1,3 ; Ge, Jun 1,3; Hu, Ling2
	2021-05-15
发表期刊	CERAMICS INTERNATIONAL
ISSN	0272-8842
通讯作者	Pan, Shusheng(sspan@gzhu.edu.cn) ; Ge, Jun(speegejun510@gzhu.edu.cn) ; Hu, Ling(huling@issp.ac.cn)
摘要	In this study, Cr2O3 and Ni-doped Cr2O3 (Cr2O3: Ni) thin film was deposited on sapphire substrate by pulsed laser deposition. The photoresponse properties of the Au/Cr2O3/Au and Au/Cr2O3: Ni/Au thin film have been investigated. After Ni doping, the photoresponse performance of Cr2O3 film has dramatically enhanced in the wavelength range from 1064 to 365 nm, and the responsivity of Cr2O3 films is increased from 0.357 to 154 ?A/W under 365 nm UV light irradiation, i.e. more than 400 times enhancement. Furthermore, the rise/fall times of photodetector is reduced from 32.3 s/12.1 s?9.51 s/9.85 s after Ni doping. The responsivity of Cr2O3: Ni films is higher than c.a.10 ?A/W during the whole visible light range. In addition, the photocurrent of Ni-doped Cr2O3 photocathode for water-splitting is enhanced from 0.3 to 19 nA/cm2. The high performance photoresponse properties promote Cr2O3: Ni film as a promising candidate for applications in solar cells and photo electrodes.
关键词	Ni doping Photoelectric performance Photo electrode
DOI	10.1016/j.ceramint.2021.01.226
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China[51872054] ; Department of Education of Guangdong Province[2018KZDXM052] ; Department of Education of Guangdong Province[2017KQNCX152] ; Startup Funds of Guangzhou University[6918ZX10051]
项目资助者	National Natural Science Foundation of China ; Department of Education of Guangdong Province ; Startup Funds of Guangzhou University
WOS研究方向	Materials Science
WOS类目	Materials Science, Ceramics
WOS记录号	WOS:000638267800009
出版者	ELSEVIER SCI LTD
引用统计	被引频次：7[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.hfcas.ac.cn:8080/handle/334002/121739
专题	中国科学院合肥物质科学研究院
通讯作者	Pan, Shusheng; Ge, Jun; Hu, Ling
作者单位	1.Guangzhou Univ, Sch Phys & Mat Sci, Guangzhou 510006, Peoples R China 2.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, HFIPS, Hefei 230031, Peoples R China 3.Guangzhou Univ, Res Ctr Adv Informat Mat CAIM, Huangpu Res & Grad Sch, Sino Singapore Guangzhou Knowledge City, Guangzhou 510555, Peoples R China
推荐引用方式 GB/T 7714	Fan, Zihao,Zhu, Min,Pan, Shusheng,et al. Giant photoresponse enhancement in Cr2O3 films by Ni doping-induced insulator-to-semiconductor transition[J]. CERAMICS INTERNATIONAL,2021,47.
APA	Fan, Zihao,Zhu, Min,Pan, Shusheng,Ge, Jun,&Hu, Ling.(2021).Giant photoresponse enhancement in Cr2O3 films by Ni doping-induced insulator-to-semiconductor transition.CERAMICS INTERNATIONAL,47.
MLA	Fan, Zihao,et al."Giant photoresponse enhancement in Cr2O3 films by Ni doping-induced insulator-to-semiconductor transition".CERAMICS INTERNATIONAL 47(2021).