Knowledge Management System of Hefei Institute of Physical Science,CAS
Influence of growth oxygen pressure on the electrical properties and phase transformation of the epitaxial (K,Na)NbO3-based lead-free ferroelectric films | |
Chen, Xinyan1,2; Jin, Feng2; Li, Teng3; Xu, Liqiang3; Huang, Zhen3; Wang, Ke4; Chen, Feng1 | |
2021-05-21 | |
发表期刊 | JOURNAL OF APPLIED PHYSICS |
ISSN | 0021-8979 |
通讯作者 | Xu, Liqiang(xuliqiang@ahu.edu.cn) ; Chen, Feng(fchen@hmfl.ac.cn) |
摘要 | The influence of the growth oxygen pressure (GPO(2)) on the performance of the epitaxial 0.95(K0.49Na0.49Li0.02)(Ta0.2Nb0.8)O-3-0.05CaZrO(3) with 2 wt. % MnO2 addition (KNNLT-CZM) lead-free ferroelectric films grown on the La0.07Ba0.93SnO3-coated SrTiO3 (001) substrates is investigated. The x-ray diffraction results show that the tetragonality of the KNNLT-CZM films is dependent on GP(O2), which varies from 0.999 at 15 Pa to 1.006 at 35 Pa. Since the polarization direction with applied electrical field of the (010)-oriented KNN-based film is along [110]/[011], the relationship between the ferroelectricity and GP(O2) is well explained from the perspective of the tetragonality change. The leakage current density of the KNNLT-CZM films is suppressed and the dielectric constant is enhanced from 427 to 1538 at 1 kHz with increasing the GP(O2). Moreover, the orthorhombic to tetragonal phase transition temperature (TO-T) of the KNNLT-CZM films grown at 15 Pa is similar to 180 degrees C, which is much lower than similar to 210 degrees C of those grown at 25/35 Pa. GP(O2) is proven to be an important factor that regulating the ferroelectricity and TO-T of the epitaxial KNNLT-CZM films. |
DOI | 10.1063/5.0039320 |
关键词[WOS] | THIN-FILMS ; GIANT PIEZOELECTRICITY ; DIELECTRIC-PROPERTIES ; POLARIZATION ; TEMPERATURE |
收录类别 | SCI |
语种 | 英语 |
资助项目 | National Key Research and Development Program of China[2017YFA0403502] ; National Key Research and Development Program of China[2017YFA0402903] ; National Natural Science Foundation of China[11804342] ; National Natural Science Foundation of China[12074001] ; State Key Laboratory of New Ceramic and Fine Processing, Tsinghua University[KFZD202001] |
项目资助者 | National Key Research and Development Program of China ; National Natural Science Foundation of China ; State Key Laboratory of New Ceramic and Fine Processing, Tsinghua University |
WOS研究方向 | Physics |
WOS类目 | Physics, Applied |
WOS记录号 | WOS:000651189300017 |
出版者 | AMER INST PHYSICS |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.hfcas.ac.cn:8080/handle/334002/122591 |
专题 | 中国科学院合肥物质科学研究院 |
通讯作者 | Xu, Liqiang; Chen, Feng |
作者单位 | 1.Chinese Acad Sci, Anhui Prov Key Lab Condensed Matter Phys Extreme, High Magnet Field Lab, Hefei 230031, Anhui, Peoples R China 2.Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China 3.Anhui Univ, Inst Phys Sci & Informat Technol, Hefei 230601, Peoples R China 4.Tsinghua Univ, Sch Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China |
推荐引用方式 GB/T 7714 | Chen, Xinyan,Jin, Feng,Li, Teng,et al. Influence of growth oxygen pressure on the electrical properties and phase transformation of the epitaxial (K,Na)NbO3-based lead-free ferroelectric films[J]. JOURNAL OF APPLIED PHYSICS,2021,129. |
APA | Chen, Xinyan.,Jin, Feng.,Li, Teng.,Xu, Liqiang.,Huang, Zhen.,...&Chen, Feng.(2021).Influence of growth oxygen pressure on the electrical properties and phase transformation of the epitaxial (K,Na)NbO3-based lead-free ferroelectric films.JOURNAL OF APPLIED PHYSICS,129. |
MLA | Chen, Xinyan,et al."Influence of growth oxygen pressure on the electrical properties and phase transformation of the epitaxial (K,Na)NbO3-based lead-free ferroelectric films".JOURNAL OF APPLIED PHYSICS 129(2021). |
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