Gate-Controlled Magnetic Phase Transition in a van der Waals Magnet Fe5GeTe2

doi:10.1021/acs.nanolett.1c01108

HFCAS OpenIR

	Gate-Controlled Magnetic Phase Transition in a van der Waals Magnet Fe5GeTe2
	Tan, Cheng 1; Xie, Wen-Qiang 2; Zheng, Guolin 1; Aloufi, Nuriyah 1; Albarakati, Sultan 1; Algarni, Meri 1; Li, Junbo 3; Partridge, James 1; Culcer, Dimitrie 4,5; Wang, Xiaolin6,7 ; Yi, Jia Bao 8; Tian, Mingliang3,9,10 ; Xiong, Yimin 3; Zhao, Yu-Jun 2; Wang, Lan 1
	2021-07-14
发表期刊	NANO LETTERS
ISSN	1530-6984
通讯作者	Zheng, Guolin(guolin.zheng@rmit.edu.au) ; Zhao, Yu-Jun(zhaoyj@scut.edu.cn) ; Wang, Lan(lan.wang@rmit.edu.au)
摘要	Magnetic van der Waals (vdW) materials are poised to enable all-electrical control of magnetism in the two-dimensional limit. However, tuning the magnetic ground state in vdW itinerant ferromagnets by voltage-induced charge doping remains a significant challenge, due to the extremely large carrier densities in these materials. Here, by cleaving the vdW itinerant ferromagnet Fe5GeTe2 (F5GT) into 5.4 nm (around two unit cells), we find that the ferromagnetism (FM) in F5GT can be substantially tuned by the thickness. Moreover, by utilizing a solid protonic gate, an electron doping concentration of above 10(21) cm(-3) has been exhibited in F5GT nanosheets. Such a high carrier accumulation exceeds that possible in widely used electric double-layer transistors (EDLTs) and surpasses the intrinsic carrier density of F5GT. Importantly, it is accompanied by a magnetic phase transition from FM to antiferromagnetism (AFM). The realization of an antiferromagnetic phase in nanosheet F5GT suggests the promise of applications in high-temperature antiferromagnetic vdW devices and heterostructures.
关键词	Fe5GeTe2 van der Waals ferromagnetism magnetic phase transition solid protonic gating
DOI	10.1021/acs.nanolett.1c01108
关键词[WOS]	FERROMAGNETISM
收录类别	SCI
语种	英语
资助项目	Australian Research Council Centre of Excellence in Future Low-Energy Electronics Technologies[CE170100039] ; Natural Science Foundation of China[12074126] ; National Key Research and Development Program of China[2016YFA0300404] ; Fundamental Research Funds for the Central Universities[2020ZYGXZR076] ; Collaborative Innovation Program of Hefei Science Center, CAS[2019HSC-CIP007] ; High Magnetic Field Laboratory of Anhui Province
项目资助者	Australian Research Council Centre of Excellence in Future Low-Energy Electronics Technologies ; Natural Science Foundation of China ; National Key Research and Development Program of China ; Fundamental Research Funds for the Central Universities ; Collaborative Innovation Program of Hefei Science Center, CAS ; High Magnetic Field Laboratory of Anhui Province
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:000674354200021
出版者	AMER CHEMICAL SOC
引用统计	被引频次：45[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.hfcas.ac.cn:8080/handle/334002/123273
专题	中国科学院合肥物质科学研究院
通讯作者	Zheng, Guolin; Zhao, Yu-Jun; Wang, Lan
作者单位	1.RMIT Univ, Sch Sci, Melbourne, Vic 3001, Australia 2.South China Univ Technol, Dept Phys, Guangzhou 510640, Peoples R China 3.Chinese Acad Sci, Anhui Prov Key Lab Condensed Matter Phys Extreme, High Magnet Field Lab, Hefei 230031, Anhui, Peoples R China 4.Univ New South Wales, UNSW Node, Sch Phys, Sydney, NSW 2052, Australia 5.Univ New South Wales, UNSW Node, ARC Ctr Excellence Future Low Energy Elect Techno, Sydney, NSW 2052, Australia 6.Univ Wollongong, Inst Superconducting & Elect Mat, Australian Inst Innovat Mat, Wollongong, NSW 2500, Australia 7.Univ Wollongong, ARC Ctr Future Low Energy Elect Technol FLEET, Wollongong, NSW 2500, Australia 8.Univ Newcastle, Global Innovat Ctr Adv Nanomat, Sch Engn, Callaghan, NSW 2308, Australia 9.Anhui Univ, Sch Phys & Mat Sci, Dept Phys, Hefei 230601, Anhui, Peoples R China 10.Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Peoples R China
推荐引用方式 GB/T 7714	Tan, Cheng,Xie, Wen-Qiang,Zheng, Guolin,et al. Gate-Controlled Magnetic Phase Transition in a van der Waals Magnet Fe5GeTe2[J]. NANO LETTERS,2021,21.
APA	Tan, Cheng.,Xie, Wen-Qiang.,Zheng, Guolin.,Aloufi, Nuriyah.,Albarakati, Sultan.,...&Wang, Lan.(2021).Gate-Controlled Magnetic Phase Transition in a van der Waals Magnet Fe5GeTe2.NANO LETTERS,21.
MLA	Tan, Cheng,et al."Gate-Controlled Magnetic Phase Transition in a van der Waals Magnet Fe5GeTe2".NANO LETTERS 21(2021).