Giant tunneling electroresistance arising from reversible partial barrier metallization in the NaTiO3/BaTiO3/LaTiO3 ferroelectric tunnel junction

doi:10.1039/d1cp01767e

HFCAS OpenIR

	Giant tunneling electroresistance arising from reversible partial barrier metallization in the NaTiO3/BaTiO3/LaTiO3 ferroelectric tunnel junction
	Xiao, Wei 1,2; Kang, Lili 1,2; Hao, Hua 1; Zhou, Yanhong 3; Zhang, Lei4,5 ; Zheng, Xiaohong1,2 ; Zeng, Zhi 1,2
	2021-07-06
发表期刊	PHYSICAL CHEMISTRY CHEMICAL PHYSICS
ISSN	1463-9076
通讯作者	Zhang, Lei(zhanglei@sxu.edu.cn) ; Zheng, Xiaohong(xhzheng@theory.issp.ac.cn)
摘要	Tunneling electroresistance (TER) is the change in tunneling resistance induced by ferroelectric polarization reversal in ferroelectric tunnel junctions (FTJs), and how to achieve a giant TER has always been a central topic in the study of FTJs. In this work, by considering the NaTiO3/BaTiO3/LaTiO3 junction with asymmetric polar interfaces as an example, we propose a novel scheme to realize a giant TER based on the reversible partial metallization of ferroelectric barrier upon the switching of ferroelectric polarization. Density functional theory calculations indicate that high on-state and low off-state conductances are obtained and the TER ratio is as high as 3.20 x 10(8)% due to the reversible partial barrier metallization, which leads to a great difference in the effective tunneling barrier widths. The reversible partial barrier metallization, accompanied by the ferroelectric polarization reversal, is driven by the parallel or anti-parallel alignment of the depolarization electrical field of the ferroelectrical barrier and a strong built-in electrical field cooperatively contributed by the asymmetric polar interfaces and the difference in the work functions of the two leads. The findings suggest a feasible scheme for constructing promising high performance FTJ memory devices by combining both asymmetric polar interfaces and substantially different work functions.
DOI	10.1039/d1cp01767e
关键词[WOS]	OPTICAL-PROPERTIES ; TRANSPORT ; TRANSITION ; PREDICTION
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China[11974355] ; National Natural Science Foundation of China[12074230] ; National Natural Science Foundation of China[11704232] ; National Natural Science Foundation of China[61764005] ; National Natural Science Foundation of China[11804093] ; National Key R&D Program of China[2017YFA0304203] ; Shanxi Province 100-Plan Talent Program ; Natural Science Foundation of Jiangxi Provincial Education Department[GJJ180324] ; [1331KSC]
项目资助者	National Natural Science Foundation of China ; National Key R&D Program of China ; Shanxi Province 100-Plan Talent Program ; Natural Science Foundation of Jiangxi Provincial Education Department
WOS研究方向	Chemistry ; Physics
WOS类目	Chemistry, Physical ; Physics, Atomic, Molecular & Chemical
WOS记录号	WOS:000677731200001
出版者	ROYAL SOC CHEMISTRY
引用统计	被引频次：3[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.hfcas.ac.cn:8080/handle/334002/123294
专题	中国科学院合肥物质科学研究院
通讯作者	Zhang, Lei; Zheng, Xiaohong
作者单位	1.Chinese Acad Sci, HFIPS, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China 2.Univ Sci & Technol China, Grad Sch, Sci Isl Branch, Hefei 230026, Peoples R China 3.East China Jiao Tong Univ, Coll Sci, Nanchang 330013, Jiangxi, Peoples R China 4.Shanxi Univ, Inst Laser Spect, State Key Lab Quantum Opt & Quantum Opt Devices, Taiyuan 030006, Peoples R China 5.Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Peoples R China
推荐引用方式 GB/T 7714	Xiao, Wei,Kang, Lili,Hao, Hua,et al. Giant tunneling electroresistance arising from reversible partial barrier metallization in the NaTiO3/BaTiO3/LaTiO3 ferroelectric tunnel junction[J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS,2021.
APA	Xiao, Wei.,Kang, Lili.,Hao, Hua.,Zhou, Yanhong.,Zhang, Lei.,...&Zeng, Zhi.(2021).Giant tunneling electroresistance arising from reversible partial barrier metallization in the NaTiO3/BaTiO3/LaTiO3 ferroelectric tunnel junction.PHYSICAL CHEMISTRY CHEMICAL PHYSICS.
MLA	Xiao, Wei,et al."Giant tunneling electroresistance arising from reversible partial barrier metallization in the NaTiO3/BaTiO3/LaTiO3 ferroelectric tunnel junction".PHYSICAL CHEMISTRY CHEMICAL PHYSICS (2021).