Roles of the Narrow Electronic Band near the Fermi Level in 1T-TaS2-Related Layered Materials

doi:10.1103/PhysRevLett.126.256402

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	Roles of the Narrow Electronic Band near the Fermi Level in 1T-TaS2-Related Layered Materials
	Wen, Chenhaoping 1; Gao, Jingjing 2,3; Xie, Yuan 1; Zhang, Qing 1; Kong, Pengfei 1; Wang, Jinghui 1,4; Jiang, Yilan 1; Luo, Xuan2 ; Li, Jun 1,4; Lu, Wenjian2 ; Sun, Yu-Ping2,5,6 ; Yan, Shichao 1,4
	2021-06-23
发表期刊	PHYSICAL REVIEW LETTERS
ISSN	0031-9007
通讯作者	Sun, Yu-Ping(ypsun@issp.ac.cn) ; Yan, Shichao(yanshch@shanghaitech.edu.cn)
摘要	Here we use low-temperature scanning tunneling microscopy and spectroscopy to reveal the roles of the narrow electronic band in two 1T-TaS2-related materials (bulk 1T-TaS2 and 4H(b)-TaS2). 4H(b)-TaS, is a superconducting compound with alternating 1T-TaS2 and 1H-TaS2 layers, where the 1H-TaS2 layer has a weak charge density wave (CDW) pattern and reduces the CDW coupling between the adjacent 1T-TaS2 layers. In the 1T-TaS2 layer of 4H(b)-TaS2, we observe a narrow electronic band located near the Fermi level, and its spatial distribution is consistent with the tight-binding calculations for two-dimensional 1T-TaS2 layers. The weak electronic hybridization between the 1T-TaS2 and 1H-TaS2 layers in 4H(b)-TaS2 shifts the narrow electronic band to be slightly above the Fermi level, which suppresses the electronic correlation-induced band splitting. In contrast, in bulk 1T-TaS2, there is an interlayer CDW coupling-induced insulating gap. In comparison with the spatial distributions of the electronic states in bulk 1T-TaS2 and 4H(b)-TaS2, the insulating gap in bulk 1T-TaS2 results from the formation of a bonding band and an antibonding band due to the overlap of the narrow electronic bands in the dimerized 1T-TaS2 layers.
DOI	10.1103/PhysRevLett.126.256402
关键词[WOS]	MOTT-INSULATING STATE ; CHARGE-DENSITY WAVES ; TRANSITION ; ORDER
收录类别	SCI
语种	英语
资助项目	Science and Technology Commission of Shanghai Municipality (STCSM)[18QA1403100] ; National Science Foundation of China[61771234] ; National Science Foundation of China[11874042] ; Shanghai Tech University ; National Key Research and Development Program[2016YFA0300404] ; National Nature Science Foundation of China[11674326] ; National Nature Science Foundation of China[11774351] ; National Natural Science Foundation of China[U1832141] ; National Natural Science Foundation of China[U1932217] ; National Natural Science Foundation of China[U2032215] ; Chinese Academy of Sciences' Large-Scale Scientific Facility[U1832141] ; Chinese Academy of Sciences' Large-Scale Scientific Facility[U1932217] ; Chinese Academy of Sciences' Large-Scale Scientific Facility[U2032215] ; Center for High-resolution Electron Microscopy (ChEM)[EM-19430216]
项目资助者	Science and Technology Commission of Shanghai Municipality (STCSM) ; National Science Foundation of China ; Shanghai Tech University ; National Key Research and Development Program ; National Nature Science Foundation of China ; National Natural Science Foundation of China ; Chinese Academy of Sciences' Large-Scale Scientific Facility ; Center for High-resolution Electron Microscopy (ChEM)
WOS研究方向	Physics
WOS类目	Physics, Multidisciplinary
WOS记录号	WOS:000665775100009
出版者	AMER PHYSICAL SOC
引用统计	被引频次：21[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.hfcas.ac.cn:8080/handle/334002/123356
专题	中国科学院合肥物质科学研究院
通讯作者	Sun, Yu-Ping; Yan, Shichao
作者单位	1.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 2.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China 3.Univ Sci & Technol China, Hefei 230026, Peoples R China 4.ShanghaiTech Univ, ShanghaiTech Lab Topol Phys, Shanghai 201210, Peoples R China 5.Chinese Acad Sci, High Magnet Field Lab, Hefei 230031, Peoples R China 6.Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Peoples R China
推荐引用方式 GB/T 7714	Wen, Chenhaoping,Gao, Jingjing,Xie, Yuan,et al. Roles of the Narrow Electronic Band near the Fermi Level in 1T-TaS2-Related Layered Materials[J]. PHYSICAL REVIEW LETTERS,2021,126.
APA	Wen, Chenhaoping.,Gao, Jingjing.,Xie, Yuan.,Zhang, Qing.,Kong, Pengfei.,...&Yan, Shichao.(2021).Roles of the Narrow Electronic Band near the Fermi Level in 1T-TaS2-Related Layered Materials.PHYSICAL REVIEW LETTERS,126.
MLA	Wen, Chenhaoping,et al."Roles of the Narrow Electronic Band near the Fermi Level in 1T-TaS2-Related Layered Materials".PHYSICAL REVIEW LETTERS 126(2021).