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Boosting Thermoelectric Performance of Cu2SnSe3 via Comprehensive Band Structure Regulation and Intensified Phonon Scattering by Multidimensional Defects
Ming, Hongwei1,2; Zhu, Gaofan2,3; Zhu, Chen1,2; Qin, Xiaoying1; Chen, Tao1,2; Zhang, Jian1; Li, Di1; Xin, Hongxing1; Jabar, Bushra1,2
2021-06-22
Source PublicationACS NANO
ISSN1936-0851
Corresponding AuthorQin, Xiaoying(xyqin@issp.ac.cn) ; Zhang, Jian(zhangjian@issp.ac.cn) ; Xin, Hongxing(xinhongxing@issp.ac.cn)
AbstractAs an eco-friendly thermoelectric material, Cu2SnSe3 has recently drawn much attention. However, its high electrical resistivity rho and low thermopower S prohibit its thermoelectric performance. Herein, we show that a widened band gap and the increased density of states are achieved via S alloying, resulting in 1.6 times enhancement of S (from 170 to 277 mu V/K). Moreover, doping In at the Sn site can cause a 19-fold decrease of rho and a 2.2 times enhancement of S (at room temperature) due to both multivalence bands' participation in electrical transport and the further enhancement of the density of states effective mass, which allows a sharp increase in the power factor. As a result, PF = 9.3 mu W cm(-1) K-2 was achieved at similar to 800 K for the Cu2Sn0.82In0.18Se2.7S0.3 sample. Besides, as large as 44% reduction of lattice thermal conductivity is obtained via intensified phonon scattering by In-doping-induced formation of multidimensional defects, such as Sn vacancies, dislocations, twin boundaries, and CuInSe2 nanoprecipitates. Consequently, a record high figure of merit of ZT = 1.51 at 858 K is acquired for Cu2Sn0.82In0.18Se2.7S0.3, which is 4.7-fold larger than that of pristine Cu2SnSe3.
Keywordthermoelectric Cu2SnSe3 energy band regulation phonon scattering multidimensional defects
DOI10.1021/acsnano.1c03120
WOS KeywordLATTICE THERMAL-CONDUCTIVITY ; FIGURE ; MERIT
Indexed BySCI
Language英语
Funding ProjectNational Natural Science Foundation of China[11674322] ; National Natural Science Foundation of China[51672278] ; National Natural Science Foundation of China[51972307] ; Anhui Provinical Natural Science Foundation[2008085MA18]
Funding OrganizationNational Natural Science Foundation of China ; Anhui Provinical Natural Science Foundation
WOS Research AreaChemistry ; Science & Technology - Other Topics ; Materials Science
WOS SubjectChemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS IDWOS:000665748900119
PublisherAMER CHEMICAL SOC
Citation statistics
Cited Times:6[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.hfcas.ac.cn:8080/handle/334002/123419
Collection中国科学院合肥物质科学研究院
Corresponding AuthorQin, Xiaoying; Zhang, Jian; Xin, Hongxing
Affiliation1.Chinese Acad Sci, Inst Solid State Phys, Key Lab Photovolta & Energy Conservat Mat, HFIPS, Hefei 230031, Peoples R China
2.Univ Sci & Technol China, Hefei 230026, Peoples R China
3.Chinese Acad Sci, Inst Nucl Energy Safety Technol, Hefei Inst Phys Sci, Hefei 230031, Anhui, Peoples R China
Recommended Citation
GB/T 7714
Ming, Hongwei,Zhu, Gaofan,Zhu, Chen,et al. Boosting Thermoelectric Performance of Cu2SnSe3 via Comprehensive Band Structure Regulation and Intensified Phonon Scattering by Multidimensional Defects[J]. ACS NANO,2021,15.
APA Ming, Hongwei.,Zhu, Gaofan.,Zhu, Chen.,Qin, Xiaoying.,Chen, Tao.,...&Jabar, Bushra.(2021).Boosting Thermoelectric Performance of Cu2SnSe3 via Comprehensive Band Structure Regulation and Intensified Phonon Scattering by Multidimensional Defects.ACS NANO,15.
MLA Ming, Hongwei,et al."Boosting Thermoelectric Performance of Cu2SnSe3 via Comprehensive Band Structure Regulation and Intensified Phonon Scattering by Multidimensional Defects".ACS NANO 15(2021).
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