Transforming a Two-Dimensional Layered Insulator into a Semiconductor or a Highly Conductive Metal through Transition Metal Ion Intercalation

doi:10.1088/0256-307X/38/5/057304

HFCAS OpenIR

	Transforming a Two-Dimensional Layered Insulator into a Semiconductor or a Highly Conductive Metal through Transition Metal Ion Intercalation
	Yan, Xiu 1,2; Zhen, Wei-Li 1; Weng, Shi-Rui 1; Zhang, Ran-Ran1 ; Zhu, Wen-Ka 1; Pi, Li1,2 ; Zhang, Chang-Jin1,3
	2021-06-01
发表期刊	CHINESE PHYSICS LETTERS
ISSN	0256-307X
通讯作者	Zhu, Wen-Ka(wkzhu@hmfl.ac.cn) ; Pi, Li(pili@ustc.edu.cn) ; Zhang, Chang-Jin(zhangcj@hmfl.ac.cn)
摘要	Atomically thin two-dimensional (2D) materials are the building bricks for next-generation electronics and optoelectronics, which demand plentiful functional properties in mechanics, transport, magnetism and photoresponse. For electronic devices, not only metals and high-performance semiconductors but also insulators and dielectric materials are highly desirable. Layered structures composed of 2D materials of different properties can be delicately designed as various useful heterojunction or homojunction devices, in which the designs on the same material (namely homojunction) are of special interest because preparation techniques can be greatly simplified and atomically seamless interfaces can be achieved. We demonstrate that the insulating pristine ZnPS3, a ternary transition-metal phosphorus trichalcogenide, can be transformed into a highly conductive metal and an n-type semiconductor by intercalating Co and Cu atoms, respectively. The field-effect-transistor (FET) devices are prepared via an ultraviolet exposure lithography technique. The Co-ZnPS3 device exhibits an electrical conductivity of 8 x 10(4) S/m, which is comparable to the conductivity of graphene. The Cu-ZnPS3 FET reveals a current ON/OFF ratio of 10(5) and a mobility of 3 x 10(-2) cm(2).V-1.s(-1). The realization of an insulator, a typical semiconductor and a metallic state in the same 2D material provides an opportunity to fabricate n-metal homojunctions and other in-plane electronic functional devices.
DOI	10.1088/0256-307X/38/5/057304
关键词[WOS]	ELECTRICAL-CONDUCTIVITY ; MOTE2 TRANSISTORS ; NANOSHEETS ; BULK
收录类别	SCI
语种	英语
资助项目	National Key Research and Development Program of China[2017YFA0403600] ; National Key Research and Development Program of China[2016YFA0300404] ; National Natural Science Foundation of China[11874363] ; National Natural Science Foundation of China[11974356] ; National Natural Science Foundation of China[U1932216] ; Collaborative Innovation Program of Hefei Science Center, CAS[2019HSC-CIP002]
项目资助者	National Key Research and Development Program of China ; National Natural Science Foundation of China ; Collaborative Innovation Program of Hefei Science Center, CAS
WOS研究方向	Physics
WOS类目	Physics, Multidisciplinary
WOS记录号	WOS:000657943700001
出版者	IOP PUBLISHING LTD
引用统计
文献类型	期刊论文
条目标识符	http://ir.hfcas.ac.cn:8080/handle/334002/123688
专题	中国科学院合肥物质科学研究院
通讯作者	Zhu, Wen-Ka; Pi, Li; Zhang, Chang-Jin
作者单位	1.Chinese Acad Sci, Hefei Inst Phys Sci, High Field Magnet Lab, Hefei 230031, Peoples R China 2.Univ Sci & Technol China, Hefei 230026, Peoples R China 3.Anhui Univ, Inst Phys Sci & Informat Technol, Hefei 230601, Peoples R China
第一作者单位	中科院强磁场科学中心
通讯作者单位	中科院强磁场科学中心
推荐引用方式 GB/T 7714	Yan, Xiu,Zhen, Wei-Li,Weng, Shi-Rui,et al. Transforming a Two-Dimensional Layered Insulator into a Semiconductor or a Highly Conductive Metal through Transition Metal Ion Intercalation[J]. CHINESE PHYSICS LETTERS,2021,38.
APA	Yan, Xiu.,Zhen, Wei-Li.,Weng, Shi-Rui.,Zhang, Ran-Ran.,Zhu, Wen-Ka.,...&Zhang, Chang-Jin.(2021).Transforming a Two-Dimensional Layered Insulator into a Semiconductor or a Highly Conductive Metal through Transition Metal Ion Intercalation.CHINESE PHYSICS LETTERS,38.
MLA	Yan, Xiu,et al."Transforming a Two-Dimensional Layered Insulator into a Semiconductor or a Highly Conductive Metal through Transition Metal Ion Intercalation".CHINESE PHYSICS LETTERS 38(2021).