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Pressure-tuned colossal magnetoresistance effect in n-type CdCr2Se4
Zhang, Bowen1,2; Gu, Chuanchuan3; An, Chao4,5; Chen, Xuliang1,6; Zhou, Yonghui1,6; Zhou, Ying4,5; Yang, Zhaorong1,4,5,6
2021-06-28
Source PublicationAPPLIED PHYSICS LETTERS
ISSN0003-6951
Corresponding AuthorGu, Chuanchuan(gucc@sustech.edu.cn) ; Yang, Zhaorong(zryang@issp.ac.cn)
AbstractThe p-type CdCr2Se4 exhibits semiconducting conductivity while n-type CdCr2Se4 displays a semiconductor-metal transition and a concomitant colossal magnetoresistance near the Curie temperature. Here, we investigate the pressure effect on the conductivity for both types of compounds. We show that the resistance of p-type sample decreases continuously upon compression, while the semiconducting behavior dominates up to 27.9GPa. For the n-type sample, the semiconductor-metal transition is suppressed gradually with the increase in pressure; meanwhile, the magnetoresistance becomes less and less pronounced and is negligible at 9.2GPa. Combined with in situ high-pressure magnetization, x-ray diffraction, and Raman spectra investigations, a ferromagnetic ground state is deduced in the pressurized n-type CdCr2Se4 before the structural transition, which is in stark contrast to the pressure effect on n-type HgCr2Se4.
DOI10.1063/5.0049868
WOS KeywordEXCHANGE INTERACTIONS
Indexed BySCI
Language英语
Funding ProjectNational Key Research and Development Program of China[2018YFA0305704] ; NSFC[U19A2093] ; NSFC[U1932152] ; NSFC[U1832209] ; NSFC[11804341] ; NSFC[11874362] ; NSFC[11804344] ; NSFC[12004004] ; NSF of Anhui Province[1908085QA18] ; NSF of Anhui Province[2008085QA40] ; Users with Excellence Project of Hefei Center CAS[2021HSC-UE008] ; Users with Excellence Project of Hefei Center CAS[2020HSC-UE015] ; Collaborative Innovation Program of Hefei Science Center, CAS[2020HSC-CIP014] ; DOE-NNSA's Office of Experimental Sciences ; DOE Office of Science by Argonne National Laboratory[DE-AC02-06CH11357] ; High Magnetic Field Laboratory of Anhui Province[AHHM-FX-2D0A20T-A02A]
Funding OrganizationNational Key Research and Development Program of China ; NSFC ; NSF of Anhui Province ; Users with Excellence Project of Hefei Center CAS ; Collaborative Innovation Program of Hefei Science Center, CAS ; DOE-NNSA's Office of Experimental Sciences ; DOE Office of Science by Argonne National Laboratory ; High Magnetic Field Laboratory of Anhui Province
WOS Research AreaPhysics
WOS SubjectPhysics, Applied
WOS IDWOS:000683610000005
PublisherAMER INST PHYSICS
Citation statistics
Document Type期刊论文
Identifierhttp://ir.hfcas.ac.cn:8080/handle/334002/124270
Collection中国科学院合肥物质科学研究院
Corresponding AuthorGu, Chuanchuan; Yang, Zhaorong
Affiliation1.Chinese Acad Sci, Anhui Prov Key Lab Condensed Matter Phys Extreme, High Magnet Field Lab, Hefei 230031, Peoples R China
2.Grad Sch Univ Sci & Technol China, Sci Isl Branch, Hefei 230026, Peoples R China
3.Southern Univ Sci & Technol, Dept Mat Sci & Engn, Shenzhen 518055, Peoples R China
4.Anhui Univ, Inst Phys Sci, Hefei 230601, Peoples R China
5.Anhui Univ, Inst Informat Technol, Hefei 230601, Peoples R China
6.High Magnet Field Lab Anhui Prov, Hefei 230031, Peoples R China
Recommended Citation
GB/T 7714
Zhang, Bowen,Gu, Chuanchuan,An, Chao,et al. Pressure-tuned colossal magnetoresistance effect in n-type CdCr2Se4[J]. APPLIED PHYSICS LETTERS,2021,118.
APA Zhang, Bowen.,Gu, Chuanchuan.,An, Chao.,Chen, Xuliang.,Zhou, Yonghui.,...&Yang, Zhaorong.(2021).Pressure-tuned colossal magnetoresistance effect in n-type CdCr2Se4.APPLIED PHYSICS LETTERS,118.
MLA Zhang, Bowen,et al."Pressure-tuned colossal magnetoresistance effect in n-type CdCr2Se4".APPLIED PHYSICS LETTERS 118(2021).
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