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Magnetic properties of the layered magnetic topological insulator EuSn2As2
Li, Huijie1,2; Gao, Wenshuai1; Chen, Zheng2,3; Chu, Weiwei2,3; Nie, Yong2,3; Ma, Shuaiqi1; Han, Yuyan2; Wu, Min2; Li, Tian2; Niu, Qun2; Ning, Wei2; Zhu, Xiangde2; Tian, Mingliang1,2,4
2021-08-25
Source PublicationPHYSICAL REVIEW B
ISSN2469-9950
Corresponding AuthorGao, Wenshuai(gwsh@ahu.edu.cn)
AbstractEuSn2As2 with a layered rhombohedral crystal structure is proposed to be a candidate for an intrinsic antiferromagnetic (AFM) topological insulator. Here, we have investigated systematic magnetoresistance (MR) and magnetization measurements on the high-quality EuSn2As2 single crystal with the magnetic field both parallel and perpendicular to the (001) plane. Both the kink of magnetic susceptibility and longitudinal resistivity reveal that EuSn2As2 undergoes an AFM transition at T-N = 21 K. At T = 2 K, the magnetization exhibits two successive plateaus of similar to 5.6 and similar to 6.6 mu(B)/Eu at the corresponding critical magnetic fields. Combined with the negative longitudinal MR and abnormal Hall resistance, we demonstrate that EuSn2As2 undergoes complicated magnetic transitions from an AFM state to a canted ferromagnetic (FM) state at H-c and then to a polarized FM state at H-s as the magnetic field increases.
DOI10.1103/PhysRevB.104.054435
Indexed BySCI
Language英语
Funding ProjectNational Key Research and Development Program of China[2016YFA0401003] ; National Key Research and Development Program of China[2017YFA0403502] ; Natural Science Foundation of China[U19A2093] ; Natural Science Foundation of China[U2032214] ; Natural Science Foundation of China[U2032163] ; Natural Science Foundation of China[U1732274] ; Natural Science Foundation of China[11904002] ; Collaborative Innovation Program of Hefei Science Center, Chinese Academy of Sciences (CAS)[2019HSC-CIP 001] ; Youth Innovation Promotion Association of CAS[2017483] ; Natural Science Foundation of Anhui Province[1908085QA15]
Funding OrganizationNational Key Research and Development Program of China ; Natural Science Foundation of China ; Collaborative Innovation Program of Hefei Science Center, Chinese Academy of Sciences (CAS) ; Youth Innovation Promotion Association of CAS ; Natural Science Foundation of Anhui Province
WOS Research AreaMaterials Science ; Physics
WOS SubjectMaterials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS IDWOS:000688522400007
PublisherAMER PHYSICAL SOC
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Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.hfcas.ac.cn:8080/handle/334002/124442
Collection中国科学院合肥物质科学研究院
Corresponding AuthorGao, Wenshuai
Affiliation1.Anhui Univ, Inst Phys Sci & Informat Technol, Hefei 230601, Peoples R China
2.Chinese Acad Sci, HFIPS, High Field Magnet Lab, Anhui Key Lab Condensed Matter Phys Extreme Condi, Hefei 230031, Anhui, Peoples R China
3.Univ Sci & Technol China, Dept Phys, Hefei 230031, Anhui, Peoples R China
4.Anhui Univ, Sch Phys & Mat Sci, Hefei 230601, Peoples R China
First Author AffilicationChinese Acad Sci, High Field Magnet Lab,Hefei 230031, Anhui, Peoples R China
Recommended Citation
GB/T 7714
Li, Huijie,Gao, Wenshuai,Chen, Zheng,et al. Magnetic properties of the layered magnetic topological insulator EuSn2As2[J]. PHYSICAL REVIEW B,2021,104.
APA Li, Huijie.,Gao, Wenshuai.,Chen, Zheng.,Chu, Weiwei.,Nie, Yong.,...&Tian, Mingliang.(2021).Magnetic properties of the layered magnetic topological insulator EuSn2As2.PHYSICAL REVIEW B,104.
MLA Li, Huijie,et al."Magnetic properties of the layered magnetic topological insulator EuSn2As2".PHYSICAL REVIEW B 104(2021).
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