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Improving the power factor and figure of merit of p-type CuSbSe2 via introducing Sb vacancies
Chen, Tao1,2; Ming, Hongwei1,2; Qin, Xiaoying1; Zhu, Chen1,2; Huang, Lulu1,2; Hou, Yunxiang3; Li, Di1; Zhang, Jian1; Xin, Hongxing1
2021-10-28
Source PublicationJOURNAL OF MATERIALS CHEMISTRY C
ISSN2050-7526
Corresponding AuthorQin, Xiaoying(xyqin@issp.ac.cn) ; Li, Di(lidi@issp.ac.cn) ; Zhang, Jian(zhangjian@issp.ac.cn)
AbstractAs a thermoelectric material, p-type CuSbSe2 has attracted much attention due to its intrinsic low thermal conductivity and environment friendly constituents. In this work, Sb deficient compounds CuSb1-xSe2 (x = 0-0.12) are prepared by vacuum melting with spark plasma sintering (SPS) and their thermoelectric properties are studied. It is found that when CuSb1-xSe2 samples are deficient in Sb (i.e., x > 0), their electrical conductivity increases by more than two times (at 300 K) due to the increase in hole concentration caused by Sb vacancies, . Moreover, experiments show that as the Sb vacancy concentration x increases to 0.09, the density of states effective mass is enhanced by similar to 3 times, which leads to the 70% enhancement of thermopower (at 300 K). In addition, around 22% reduction of lattice thermal conductivity is observed due to the intensified phonon scattering by Sb vacancies, phonon-phonon scattering and phase boundaries. As a result, a peak power factor of 3.2 mu W cm(-1) K-2 and a maximum figure of merit ZT of 0.50 are achieved at 673 K for CuSb0.91Se2, which are similar to 38% and similar to 44% larger than those of pristine CuSbSe2.
DOI10.1039/d1tc02728j
WOS KeywordHIGH THERMOELECTRIC PERFORMANCE ; THERMAL-CONDUCTIVITY ; CU2SNSE3
Indexed BySCI
Language英语
Funding ProjectNatural Science Foundation of China[1217040291] ; Natural Science Foundation of China[11674322] ; Natural Science Foundation of China[51972307]
Funding OrganizationNatural Science Foundation of China
WOS Research AreaMaterials Science ; Physics
WOS SubjectMaterials Science, Multidisciplinary ; Physics, Applied
WOS IDWOS:000706338300001
PublisherROYAL SOC CHEMISTRY
Citation statistics
Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.hfcas.ac.cn:8080/handle/334002/125534
Collection中国科学院合肥物质科学研究院
Corresponding AuthorQin, Xiaoying; Li, Di; Zhang, Jian
Affiliation1.Chinese Acad Sci, Inst Solid State Phys, Key Lab Photovolta & Energy Conservat Mat, HFIPS, Hefei 230031, Peoples R China
2.Univ Sci & Technol China, Hefei 230026, Peoples R China
3.Nanjing Univ Sci & Technol, Sch Mat Sci & Engn, MIIT Key Lab Adv Metall & Intermetall Mat Technol, Nanjing 210094, Peoples R China
Recommended Citation
GB/T 7714
Chen, Tao,Ming, Hongwei,Qin, Xiaoying,et al. Improving the power factor and figure of merit of p-type CuSbSe2 via introducing Sb vacancies[J]. JOURNAL OF MATERIALS CHEMISTRY C,2021,9.
APA Chen, Tao.,Ming, Hongwei.,Qin, Xiaoying.,Zhu, Chen.,Huang, Lulu.,...&Xin, Hongxing.(2021).Improving the power factor and figure of merit of p-type CuSbSe2 via introducing Sb vacancies.JOURNAL OF MATERIALS CHEMISTRY C,9.
MLA Chen, Tao,et al."Improving the power factor and figure of merit of p-type CuSbSe2 via introducing Sb vacancies".JOURNAL OF MATERIALS CHEMISTRY C 9(2021).
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