Improving the power factor and figure of merit of p-type CuSbSe2 via introducing Sb vacancies

doi:10.1039/d1tc02728j

HFCAS OpenIR

	Improving the power factor and figure of merit of p-type CuSbSe2 via introducing Sb vacancies
	Chen, Tao 1,2; Ming, Hongwei 1,2; Qin, Xiaoying1 ; Zhu, Chen 1,2; Huang, Lulu 1,2; Hou, Yunxiang 3; Li, Di1 ; Zhang, Jian1 ; Xin, Hongxing1
	2021-10-28
发表期刊	JOURNAL OF MATERIALS CHEMISTRY C
ISSN	2050-7526
通讯作者	Qin, Xiaoying(xyqin@issp.ac.cn) ; Li, Di(lidi@issp.ac.cn) ; Zhang, Jian(zhangjian@issp.ac.cn)
摘要	As a thermoelectric material, p-type CuSbSe2 has attracted much attention due to its intrinsic low thermal conductivity and environment friendly constituents. In this work, Sb deficient compounds CuSb1-xSe2 (x = 0-0.12) are prepared by vacuum melting with spark plasma sintering (SPS) and their thermoelectric properties are studied. It is found that when CuSb1-xSe2 samples are deficient in Sb (i.e., x > 0), their electrical conductivity increases by more than two times (at 300 K) due to the increase in hole concentration caused by Sb vacancies, . Moreover, experiments show that as the Sb vacancy concentration x increases to 0.09, the density of states effective mass is enhanced by similar to 3 times, which leads to the 70% enhancement of thermopower (at 300 K). In addition, around 22% reduction of lattice thermal conductivity is observed due to the intensified phonon scattering by Sb vacancies, phonon-phonon scattering and phase boundaries. As a result, a peak power factor of 3.2 mu W cm(-1) K-2 and a maximum figure of merit ZT of 0.50 are achieved at 673 K for CuSb0.91Se2, which are similar to 38% and similar to 44% larger than those of pristine CuSbSe2.
DOI	10.1039/d1tc02728j
关键词[WOS]	HIGH THERMOELECTRIC PERFORMANCE ; THERMAL-CONDUCTIVITY ; CU2SNSE3
收录类别	SCI
语种	英语
资助项目	Natural Science Foundation of China[1217040291] ; Natural Science Foundation of China[11674322] ; Natural Science Foundation of China[51972307]
项目资助者	Natural Science Foundation of China
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000706338300001
出版者	ROYAL SOC CHEMISTRY
引用统计	被引频次：19[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.hfcas.ac.cn:8080/handle/334002/125534
专题	中国科学院合肥物质科学研究院
通讯作者	Qin, Xiaoying; Li, Di; Zhang, Jian
作者单位	1.Chinese Acad Sci, Inst Solid State Phys, Key Lab Photovolta & Energy Conservat Mat, HFIPS, Hefei 230031, Peoples R China 2.Univ Sci & Technol China, Hefei 230026, Peoples R China 3.Nanjing Univ Sci & Technol, Sch Mat Sci & Engn, MIIT Key Lab Adv Metall & Intermetall Mat Technol, Nanjing 210094, Peoples R China
推荐引用方式 GB/T 7714	Chen, Tao,Ming, Hongwei,Qin, Xiaoying,et al. Improving the power factor and figure of merit of p-type CuSbSe2 via introducing Sb vacancies[J]. JOURNAL OF MATERIALS CHEMISTRY C,2021,9.
APA	Chen, Tao.,Ming, Hongwei.,Qin, Xiaoying.,Zhu, Chen.,Huang, Lulu.,...&Xin, Hongxing.(2021).Improving the power factor and figure of merit of p-type CuSbSe2 via introducing Sb vacancies.JOURNAL OF MATERIALS CHEMISTRY C,9.
MLA	Chen, Tao,et al."Improving the power factor and figure of merit of p-type CuSbSe2 via introducing Sb vacancies".JOURNAL OF MATERIALS CHEMISTRY C 9(2021).