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High-pressure synthesis, growth and characterization of large-size BaGa4Se7 crystals
Li, Chunxiao1,2,3; Li, Zhuang1,2,3; Sun, Mengran1,2,3; Huang, Changbao4; Yao, Jiyong1,2
2022
发表期刊JOURNAL OF CRYSTAL GROWTH
ISSN0022-0248
通讯作者Yao, Jiyong(jyao@mail.ipc.ac.cn)
摘要BaGa4Se7 (BGSe), as a promising new infrared nonlinear optical (IR NLO) crystal, has been widely studied in recent years due to its outstanding overall properties and IR laser output performance. In this paper, the synthesis method of polycrystalline sample and the temperature field used in crystal growth of BGSe were improved. More than 200 g BGSe polycrystalline sample can be synthesized by high pressure synthesis in just 2 days. The crystal growth temperature field can be designed with the use of COMSOL Multiphysics (TM) simulation software, and the experimental results fit well with the simulation results. A high-quality crystal with dimensions up to Phi 40 mm x 180 mm was grown successfully by the Bridgman-Stockbarger method. The surface laser damage threshold was measured to be 7.075 J/cm(2) (peak on-axial fluence) using a 1.064 mu m laser under conditions of 5 ns pulse width, 1 Hz frequency, and 0.12 mm spot size. The absorption coefficient was 0.017 cm(-1)@4 mu m for an uncoated sample.
关键词A2. Bridgman technique A2. Single crystal growth B2. Nonlinear optic materials
DOI10.1016/j.jcrysgro.2021.126405
关键词[WOS]INDUCED DAMAGE THRESHOLD ; NONLINEAR CRYSTALS ; SINGLE-CRYSTALS ; HIGH-POWER ; ZNGEP2 ; BAGA2GESE6
收录类别SCI
语种英语
资助项目National Natural Science Foundation of China[51890862]
项目资助者National Natural Science Foundation of China
WOS研究方向Crystallography ; Materials Science ; Physics
WOS类目Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号WOS:000718377900005
出版者ELSEVIER
引用统计
被引频次:7[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.hfcas.ac.cn:8080/handle/334002/126677
专题中国科学院合肥物质科学研究院
通讯作者Yao, Jiyong
作者单位1.Chinese Acad Sci, Beijing Ctr Crystal Res & Dev, Tech Inst Phys & Chem, Key Lab Funct Crystals & Laser Technol, Beijing 100190, Peoples R China
2.Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
4.Chinese Acad Sci, Anhui Inst Opt & Fine Mech, Anhui Prov Key Lab Photon Devices & Mat, Hefei 230031, Peoples R China
推荐引用方式
GB/T 7714
Li, Chunxiao,Li, Zhuang,Sun, Mengran,et al. High-pressure synthesis, growth and characterization of large-size BaGa4Se7 crystals[J]. JOURNAL OF CRYSTAL GROWTH,2022,577.
APA Li, Chunxiao,Li, Zhuang,Sun, Mengran,Huang, Changbao,&Yao, Jiyong.(2022).High-pressure synthesis, growth and characterization of large-size BaGa4Se7 crystals.JOURNAL OF CRYSTAL GROWTH,577.
MLA Li, Chunxiao,et al."High-pressure synthesis, growth and characterization of large-size BaGa4Se7 crystals".JOURNAL OF CRYSTAL GROWTH 577(2022).
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