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Achieving Ultralow Lattice Thermal Conductivity and High Thermoelectric Performance in GeTe Alloys via Introducing Cu2Te Nanocrystals and Resonant Level Doping
Zhang, Qingtang1; Ti, Zhuoyang2; Zhu, Yuelei3; Zhang, Yongsheng2; Cao, Yang1; Li, Shuang1; Wang, Meiyu3; Li, Di2; Zou, Bo1; Hou, Yunxiang1; Wang, Peng3; Tang, Guodong1
2021-12-28
发表期刊ACS NANO
ISSN1936-0851
通讯作者Wang, Peng(wangpeng@nju.edu.cn) ; Tang, Guodong(tangguodong@njust.edu.cn)
摘要The binary compound of GeTe emerging as a potential medium-temperature thermoelectric material has drawn a great deal of attention. Here, we achieve ultralow lattice thermal conductivity and high thermoelectric performance in In and a heavy content of Cu codoped GeTe thermoelectrics. In dopants improve the density of state near the surface of Femi of GeTe by introducing resonant levels, producing a sharp increase of the Seebeck coefficient. In and Cu codoping not only optimizes carrier concentration but also substantially increases carrier mobility to a high value of 87 cm(2) V-1 s(-1 )due to the diminution of Ge vacancies. The enhanced Seebeck coefficient coupled with dramatically enhanced carrier mobility results in significant enhancement of PF in Ge1.04-x-yInxCuyTe series. Moreover, we introduce Cu2Te nanocrystals' secondary phase into GeTe by alloying a heavy content of Cu. Cu2Te nanocrystals and a high density of dislocations cause strong phonon scattering, significantly diminishing lattice thermal conductivity. The lattice thermal conductivity reduced as low as 0.31 W m(-1) K-1 at 823 K, which is not only lower than the amorphous limit of GeTe but also competitive with those of thermoelectric materials with strong lattice anharmonicity or complex crystal structures. Consequently, a high ZT of 2.0 was achieved for Ge0.9In0.015Cu0.125Te by decoupling electron and phonon transport of GeTe. This work highlights the importance of phonon engineering in advancing high-performance GeTe thermoelectrics.
关键词resonant levels nanocrystals thermoelectric materials carrier concentration lattice thermal conductivity
DOI10.1021/acsnano.1c05650
关键词[WOS]BAND CONVERGENCE ; POLYCRYSTALLINE SNSE ; FIGURE ; MERIT ; PBTE ; EFFICIENCY ; LEADS ; SNTE
收录类别SCI
语种英语
资助项目National Natural Science Foundation of China[52071182] ; Qinglan Project of the Young and Middle-aged Academic Leader of Jiangsu Province ; Fundamental Research Funds for the Central Universities[30921011107]
项目资助者National Natural Science Foundation of China ; Qinglan Project of the Young and Middle-aged Academic Leader of Jiangsu Province ; Fundamental Research Funds for the Central Universities
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science
WOS类目Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS记录号WOS:000751890100052
出版者AMER CHEMICAL SOC
引用统计
被引频次:40[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.hfcas.ac.cn:8080/handle/334002/127555
专题中国科学院合肥物质科学研究院
通讯作者Wang, Peng; Tang, Guodong
作者单位1.Nanjing Univ Sci & Technol, Sch Mat Sci & Engn, MIIT Key Lab Adv Metall & Intermetall Mat Technol, Nanjing 210094, Peoples R China
2.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
3.Nanjing Univ, Innovat Ctr Adv Microstruct, Coll Engn & Appl Sci & Collaborat, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
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GB/T 7714
Zhang, Qingtang,Ti, Zhuoyang,Zhu, Yuelei,et al. Achieving Ultralow Lattice Thermal Conductivity and High Thermoelectric Performance in GeTe Alloys via Introducing Cu2Te Nanocrystals and Resonant Level Doping[J]. ACS NANO,2021,15.
APA Zhang, Qingtang.,Ti, Zhuoyang.,Zhu, Yuelei.,Zhang, Yongsheng.,Cao, Yang.,...&Tang, Guodong.(2021).Achieving Ultralow Lattice Thermal Conductivity and High Thermoelectric Performance in GeTe Alloys via Introducing Cu2Te Nanocrystals and Resonant Level Doping.ACS NANO,15.
MLA Zhang, Qingtang,et al."Achieving Ultralow Lattice Thermal Conductivity and High Thermoelectric Performance in GeTe Alloys via Introducing Cu2Te Nanocrystals and Resonant Level Doping".ACS NANO 15(2021).
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