Creating high-dense stacking faults and endo-grown nanoneedles to enhance phonon scattering and improve thermoelectric performance of Cu 2 SnSe 3

HFCAS OpenIR > 中科院固体物理研究所

	Creating high-dense stacking faults and endo-grown nanoneedles to enhance phonon scattering and improve thermoelectric performance of Cu 2 SnSe 3
	Hongwei Ming 1,2; Chen Zhu 1,2; Tao Chen 1,2; Shuhuan Yang 1,2; Yong Chen 1,2; Jian Zhang1,2 ; Di Li1,2 ; Hongxing Xin1,2 ; Xiaoying Qin1,2
	2022
发表期刊	Nano Energy
收录类别	SCI
文献类型	期刊论文
条目标识符	http://ir.hfcas.ac.cn:8080/handle/334002/128781
专题	中科院固体物理研究所
作者单位	1.Key Lab of Photovoltaic and Energy Conservation Materials, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, P. R. China 2.University of Science and Technology of China, Hefei 230026, China
推荐引用方式 GB/T 7714	Hongwei Ming,Chen Zhu,Tao Chen,et al. Creating high-dense stacking faults and endo-grown nanoneedles to enhance phonon scattering and improve thermoelectric performance of Cu 2 SnSe 3[J]. Nano Energy,2022.
APA	Hongwei Ming.,Chen Zhu.,Tao Chen.,Shuhuan Yang.,Yong Chen.,...&Xiaoying Qin.(2022).Creating high-dense stacking faults and endo-grown nanoneedles to enhance phonon scattering and improve thermoelectric performance of Cu 2 SnSe 3.Nano Energy.
MLA	Hongwei Ming,et al."Creating high-dense stacking faults and endo-grown nanoneedles to enhance phonon scattering and improve thermoelectric performance of Cu 2 SnSe 3".Nano Energy (2022).