Thermoelectric properties of hole-doped CuRhO2 thin films

doi:10.1063/5.0116562

HFCAS OpenIR

	Thermoelectric properties of hole-doped CuRhO2 thin films
	Cheng, W. P.1,2; He, Y. D.1,2; Wei, R. H.1 ; Hu, L.1 ; Song, W. H.1; Zhu, X. B.1 ; Sun, Y. P.1,3,4
	2022-10-24
发表期刊	APPLIED PHYSICS LETTERS
ISSN	0003-6951
通讯作者	Wei, R. H.(rhwei@issp.ac.cn) ; Zhu, X. B.(xbzhu@issp.ac.cn)
摘要	Design and realization of high-efficiency p-type thermoelectric materials with excellent performance are the demand for integrated thermoelectric components. Compared with single crystal bulk materials, thermoelectric thin films are more suitable for the miniaturization of thermoelectric devices. Here, c-axis oriented CuRh1-xMgxO2 (x = 0, 0.05, and 0.1) thin films were prepared and the thermoelectric properties are reported. The power factor of a p-type 10% Mg-doped CuRhO2 thin film shows a large value of 535.7 mu W K-2 m(-1) at 300 K. The results suggest that the hole-doped CuRhO2 thin films can be regarded as potential p-type thermoelectric oxide and will pave an avenue to develop Rh-based thermoelectric thin films. Published under an exclusive license by AIP Publishing.
DOI	10.1063/5.0116562
关键词[WOS]	TEMPERATURE ; BI2SR2CO2OY
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China ; Anhui Provincial Key RD Program ; [12274410] ; [2022a05020037]
项目资助者	National Natural Science Foundation of China ; Anhui Provincial Key RD Program
WOS研究方向	Physics
WOS类目	Physics, Applied
WOS记录号	WOS:000876565300008
出版者	AIP Publishing
引用统计
文献类型	期刊论文
条目标识符	http://ir.hfcas.ac.cn:8080/handle/334002/130002
专题	中国科学院合肥物质科学研究院
通讯作者	Wei, R. H.; Zhu, X. B.
作者单位	1.Chinese Acad Sci, HFIPS, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China 2.Univ Sci & Technol China, Hefei 230026, Peoples R China 3.Chinese Acad Sci, HFIPS, High Magnet Field Lab, Hefei 230031, Peoples R China 4.Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Peoples R China
推荐引用方式 GB/T 7714	Cheng, W. P.,He, Y. D.,Wei, R. H.,et al. Thermoelectric properties of hole-doped CuRhO2 thin films[J]. APPLIED PHYSICS LETTERS,2022,121.
APA	Cheng, W. P..,He, Y. D..,Wei, R. H..,Hu, L..,Song, W. H..,...&Sun, Y. P..(2022).Thermoelectric properties of hole-doped CuRhO2 thin films.APPLIED PHYSICS LETTERS,121.
MLA	Cheng, W. P.,et al."Thermoelectric properties of hole-doped CuRhO2 thin films".APPLIED PHYSICS LETTERS 121(2022).