Existence of bipolar resistive switching with self-rectifying behavior in a p-CuCrO2/n-Si heterostructure

doi:10.1016/j.tsf.2022.139542

HFCAS OpenIR

	Existence of bipolar resistive switching with self-rectifying behavior in a p-CuCrO2/n-Si heterostructure
	Cheng, Wangping 1,2; Li, Chenhui 1,2; Zhou, Chen 1,2; He, Yuandi 1,2; Wei, Renhuai1 ; Hu, Ling1 ; Song, Wenhai1 ; Zhu, Xuebin1 ; Sun, Yuping1,3,4
	2022-11-30
发表期刊	THIN SOLID FILMS
ISSN	0040-6090
通讯作者	Wei, Renhuai(rhwei@issp.ac.cn) ; Zhu, Xuebin(xbzhu@issp.ac.cn)
摘要	The resistive random access memory with self-rectifying behavior is one of the most effective to suppress the crosstalk current problem in crossbar array architectures. In this study, a p-type delafossite CuCrO2 thin film is fabricated on an n-type silicon (n-Si) substrate, and the resistive switching (RS) behavior of the Au/CuCrO2/n-Si device is investigated in detail. The heterostructure exhibits repeatable bipolar RS with self-rectifying behavior. The bipolar RS behavior can be attributed to the trapping/detrapping of charge carriers in oxygen vacancies at the p-CuCrO2/n-Si interface. The current-voltage characteristics indicate that the self-rectifying behavior in the low resistance state is derived from the Schottky-like barrier at the interface of p-CuCrO2/n-Si. These results provide a potential utilization of resistive random access memory with self-rectifying behavior in p-type delafossite-based heterostructures.
关键词	Resistive random access memory Resistive switching Self-rectifying behavior Copper chromium oxide Thin film Solution deposition
DOI	10.1016/j.tsf.2022.139542
关键词[WOS]	THIN-FILMS ; INTEGRATION ; MEMRISTOR ; MEMORIES
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China ; Anhui Provincial Key R D Program ; [12274410] ; [2022a05020037]
项目资助者	National Natural Science Foundation of China ; Anhui Provincial Key R D Program
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:000885782500003
出版者	ELSEVIER SCIENCE SA
引用统计	被引频次：3[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.hfcas.ac.cn:8080/handle/334002/130320
专题	中国科学院合肥物质科学研究院
通讯作者	Wei, Renhuai; Zhu, Xuebin
作者单位	1.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, HFIPS, Hefei 230031, Peoples R China 2.Univ Sci & Technol China, Hefei 230026, Peoples R China 3.Chinese Acad Sci, High Magnet Field Lab, HFIPS, Hefei 230031, Peoples R China 4.Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Peoples R China
推荐引用方式 GB/T 7714	Cheng, Wangping,Li, Chenhui,Zhou, Chen,et al. Existence of bipolar resistive switching with self-rectifying behavior in a p-CuCrO2/n-Si heterostructure[J]. THIN SOLID FILMS,2022,762.
APA	Cheng, Wangping.,Li, Chenhui.,Zhou, Chen.,He, Yuandi.,Wei, Renhuai.,...&Sun, Yuping.(2022).Existence of bipolar resistive switching with self-rectifying behavior in a p-CuCrO2/n-Si heterostructure.THIN SOLID FILMS,762.
MLA	Cheng, Wangping,et al."Existence of bipolar resistive switching with self-rectifying behavior in a p-CuCrO2/n-Si heterostructure".THIN SOLID FILMS 762(2022).