High-Performance Planar-Type Photodetector Based on Hot-PressedCsPbBr(3) Wafer br

doi:10.1021/acs.jpclett.2c00089

HFCAS OpenIR

	High-Performance Planar-Type Photodetector Based on Hot-PressedCsPbBr(3) Wafer br
	Zhao, Xiao 1,2,5; Wang, Shimao1,2,3 ; Zhuge, Fuwei 6; Song, Yanan 1,2,7; Aoki, Toru 8; Dong, Weiwei 9; Fu, Mengyu 1,2,7; Meng, Gang1,2,3 ; Deng, Zanhong1,2 ; Tao, Ruhua1,2,3 ; Fang, Xiaodong1,2,4
	2022-04-07
发表期刊	JOURNAL OF PHYSICAL CHEMISTRY LETTERS
ISSN	1948-7185
通讯作者	Wang, Shimao(shmwang@aiofm.ac.cn) ; Meng, Gang(menggang@aiofm.ac.cn) ; Fang, Xiaodong(fangxiaodong@sztu.edu.cn)
摘要	Considering the disadvantages of the common methods for CsPbBr3singlecrystal growth including the high cost of the melt method and the low shape controllabilityof the solution method, a facile hot-pressed (HP) approach has been introduced to prepareCsPbBr3wafers. The effects of HP temperature on the phase purity of HP-CsPbBr3wafersand the performance of the corresponding photodetectors have been investigated. The HPtemperature for preparing phase-pure, shape-regular, and dense CsPbBr3wafers has beenoptimized to be 150 degrees C, and the HP-CsPbBr3wafer based planar-type photodetectorsexhibit an ultrasensitive weak light photoresponse. Under the illumination of a 530 nm LEDwith a light power density of 1.1 mu Wcm-2, the responsivity, external quantum efficiency, anddetectivity of the devices reach 19.79 A W-1, 4634%, and 2.14x1013Jones, respectively, and a fast response speed with a rise time of40.5 mu s and a fall time of 10.0 mu s has been achieved.
DOI	10.1021/acs.jpclett.2c00089
关键词[WOS]	PEROVSKITE CSPBBR3 CRYSTALS ; METHYLAMMONIUM LEAD IODIDE ; ENERGY ; OPPORTUNITIES ; CHALLENGES ; DIFFUSION ; MIGRATION ; GROWTH ; LIGHT
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China[62075223] ; National Natural Science Foundation of China[11674324] ; National Natural Science Foundation of China[62175167] ; Advanced Laser Technology Laboratory of Anhui Province[AHL2020ZR02] ; CAS Pioneer Hundred Talents Program of Chinese Academy of Sciences, Natural Science Foundation of Top Talent of Shenzhen Technology University[2020101] ; Anhui Key Laboratory of Advanced Building Materials[JZCL003 KF] ; Natural Science Research Project of Higher School of Anhui Province[KJ2020A0477]
项目资助者	National Natural Science Foundation of China ; Advanced Laser Technology Laboratory of Anhui Province ; CAS Pioneer Hundred Talents Program of Chinese Academy of Sciences, Natural Science Foundation of Top Talent of Shenzhen Technology University ; Anhui Key Laboratory of Advanced Building Materials ; Natural Science Research Project of Higher School of Anhui Province
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Atomic, Molecular & Chemical
WOS记录号	WOS:000787083700020
出版者	AMER CHEMICAL SOC
引用统计	被引频次：6[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.hfcas.ac.cn:8080/handle/334002/131574
专题	中国科学院合肥物质科学研究院
通讯作者	Wang, Shimao; Meng, Gang; Fang, Xiaodong
作者单位	1.Chinese Acad Sci, Anhui Inst Opt & Fine Mech, Anhui Prov Key Lab Photon Devices & Mat, Hefei 230031, Peoples R China 2.Chinese Acad Sci, Hefei Inst Phys Sci, Key Lab Photovolta & Energy Conservat Mat, Hefei 230031, Peoples R China 3.Adv Laser Technol Lab Anhui Prov, Hefei 230037, Peoples R China 4.Shenzhen Technol Univ, Coll New Mat & New Energies, Shenzhen 518118, Peoples R China 5.Univ Sci & Technol China, Sch Environm Sci & Optoelect Technol, Hefei 230026, Peoples R China 6.Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, Wuhan 430074, Peoples R China 7.Univ Sci & Technol China, Grad Sch, Sci Isl Branch, Hefei 230026, Peoples R China 8.Shizuoka Univ, Res Inst Elect, Hamamatsu, Shizuoka 4328011, Japan 9.Anhui Jianzhu Univ, Sch Mat & Chem Engn, Hefei 230009, Peoples R China
第一作者单位	中科院安徽光学精密机械研究所
通讯作者单位	中科院安徽光学精密机械研究所
推荐引用方式 GB/T 7714	Zhao, Xiao,Wang, Shimao,Zhuge, Fuwei,et al. High-Performance Planar-Type Photodetector Based on Hot-PressedCsPbBr(3) Wafer br[J]. JOURNAL OF PHYSICAL CHEMISTRY LETTERS,2022,13.
APA	Zhao, Xiao.,Wang, Shimao.,Zhuge, Fuwei.,Song, Yanan.,Aoki, Toru.,...&Fang, Xiaodong.(2022).High-Performance Planar-Type Photodetector Based on Hot-PressedCsPbBr(3) Wafer br.JOURNAL OF PHYSICAL CHEMISTRY LETTERS,13.
MLA	Zhao, Xiao,et al."High-Performance Planar-Type Photodetector Based on Hot-PressedCsPbBr(3) Wafer br".JOURNAL OF PHYSICAL CHEMISTRY LETTERS 13(2022).