Institutional Repository of Chinese Acad Sci, Inst Solid State Phys, Hefei 230031, Anhui, Peoples R China
Annealing temperature dependence on the structural and optical properties of sputtering-grown high-k HfO2 gate dielectrics | |
B. Deng1; G. He1,2; X. S. Chen2; X. F. Chen1; J. W. Zhang1; M. Liu3; J. G. Lv4; Z. Q. Sun1 | |
2014 | |
发表期刊 | J Mater Sci: Mater Electron |
WOS记录号 | WOS:000340496700073 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.hfcas.ac.cn:8080/handle/334002/20500 |
专题 | 中科院固体物理研究所 |
作者单位 | 1.Anhui Univ, Sch Phys & Mat Sci, Hefei 230601, Peoples R China 2.Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China 3.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Anhui Key Lab Nanomat & Nanostruct, Hefei 230031, Peoples R China 4.Hefei Normal Univ, Dept Phys & Elect Engn, Hefei 230061, Peoples R China |
推荐引用方式 GB/T 7714 | B. Deng,G. He,X. S. Chen,et al. Annealing temperature dependence on the structural and optical properties of sputtering-grown high-k HfO2 gate dielectrics[J]. J Mater Sci: Mater Electron,2014,25(9):4163-4169. |
APA | B. Deng.,G. He.,X. S. Chen.,X. F. Chen.,J. W. Zhang.,...&Z. Q. Sun.(2014).Annealing temperature dependence on the structural and optical properties of sputtering-grown high-k HfO2 gate dielectrics.J Mater Sci: Mater Electron,25(9),4163-4169. |
MLA | B. Deng,et al."Annealing temperature dependence on the structural and optical properties of sputtering-grown high-k HfO2 gate dielectrics".J Mater Sci: Mater Electron 25.9(2014):4163-4169. |
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Annealing temperatur(3172KB) | 期刊论文 | 作者接受稿 | 开放获取 | CC BY-NC-SA | 浏览 下载 |
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