Thickness dependence of the charge-density-wave transition temperature in VSe2

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	Thickness dependence of the charge-density-wave transition temperature in VSe2
	Jiyong Yang 1; Weike Wang 2; Yan Liu 1; Haifeng Du1 ; Wei Ning1 ; Guolin Zheng 1; Chiming Jin 1; Yuyan Han1 ; Ning Wang 1; Zhaorong Yang2 ; Mingliang Tian1 ; Yuheng Zhang1
	2014
发表期刊	APPLIED PHYSICS LETTERS
WOS记录号	WOS:000341188700066
引用统计	被引频次：89[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.hfcas.ac.cn:8080/handle/334002/21055
专题	中科院强磁场科学中心
作者单位	1.High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, Anhui, China 2.Institute of Solid State Physics, Chinese Academy of Sciences, Heifei 230031, Anhui, China
第一作者单位	中科院强磁场科学中心
推荐引用方式 GB/T 7714	Jiyong Yang,Weike Wang,Yan Liu,et al. Thickness dependence of the charge-density-wave transition temperature in VSe2[J]. APPLIED PHYSICS LETTERS,2014,105(6):063109.
APA	Jiyong Yang.,Weike Wang.,Yan Liu.,Haifeng Du.,Wei Ning.,...&Yuheng Zhang.(2014).Thickness dependence of the charge-density-wave transition temperature in VSe2.APPLIED PHYSICS LETTERS,105(6),063109.
MLA	Jiyong Yang,et al."Thickness dependence of the charge-density-wave transition temperature in VSe2".APPLIED PHYSICS LETTERS 105.6(2014):063109.