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Coexistence of resistance switching and negative differential resistance in the alpha-Fe2O3 nanorod film
Cai, Yunyu1,2; Yuan, Qinglin1,2,3; Ye, Yixing1,2; Liu, Jun1,2; Liang, Changhao1,2,3
2016-07-14
发表期刊PHYSICAL CHEMISTRY CHEMICAL PHYSICS
摘要We report the coexistence of resistance switching (RS) behavior and the negative differential resistance (NDR) phenomenon in the alpha-Fe2O3 nanorod film grown in situ on a fluorine-doped tin oxide glass substrate. The reversible switching of the low-and high-resistance states (LRS and HRS, respectively) of the film device can be excited simply by applying bias voltage. The switching from the HRS to the LRS was initiated in the negative bias region, whereas the NDR process followed by the reversion of the HRS occurred in the positive bias region. With the increase in compliant current (CC), the carrier conduction models of the LRS and the HRS both changed and the current-voltage (I-V) relationships in the NDR region were seriously affected by the thermal process according to the level of applied CC. The co-existence of RS and NDR was possibly caused by defects during migration, such as oxygen vacancies and interstitial iron ions, which were formed in the alpha-Fe2O3 nanorod film. This work provided information on the ongoing effort toward developing novel electrical features of advanced transition metal oxide devices.
文章类型Article
WOS标题词Science & Technology ; Physical Sciences
DOI10.1039/c6cp02192a
关键词[WOS]OXIDE ; BEHAVIOR ; DEVICES ; MEMORY
收录类别SCI
语种英语
项目资助者National Basic Research Program of China(2014CB931704) ; National Basic Research Program of China(2014CB931704) ; National Basic Research Program of China(2014CB931704) ; National Basic Research Program of China(2014CB931704) ; National Basic Research Program of China(2014CB931704) ; National Basic Research Program of China(2014CB931704) ; National Basic Research Program of China(2014CB931704) ; National Basic Research Program of China(2014CB931704) ; National Natural Science Foundation of China (NSFC)(51371166 ; National Natural Science Foundation of China (NSFC)(51371166 ; National Natural Science Foundation of China (NSFC)(51371166 ; National Natural Science Foundation of China (NSFC)(51371166 ; National Natural Science Foundation of China (NSFC)(51371166 ; National Natural Science Foundation of China (NSFC)(51371166 ; National Natural Science Foundation of China (NSFC)(51371166 ; National Natural Science Foundation of China (NSFC)(51371166 ; China Postdoctoral Science Foundation ; China Postdoctoral Science Foundation ; China Postdoctoral Science Foundation ; China Postdoctoral Science Foundation ; China Postdoctoral Science Foundation ; China Postdoctoral Science Foundation ; China Postdoctoral Science Foundation ; China Postdoctoral Science Foundation ; 51571186 ; 51571186 ; 51571186 ; 51571186 ; 51571186 ; 51571186 ; 51571186 ; 51571186 ; 11404338 ; 11404338 ; 11404338 ; 11404338 ; 11404338 ; 11404338 ; 11404338 ; 11404338 ; 11304315 ; 11304315 ; 11304315 ; 11304315 ; 11304315 ; 11304315 ; 11304315 ; 11304315 ; 51401206 ; 51401206 ; 51401206 ; 51401206 ; 51401206 ; 51401206 ; 51401206 ; 51401206 ; 11504375) ; 11504375) ; 11504375) ; 11504375) ; 11504375) ; 11504375) ; 11504375) ; 11504375)
WOS研究方向Chemistry ; Physics
WOS类目Chemistry, Physical ; Physics, Atomic, Molecular & Chemical
WOS记录号WOS:000379482100039
引用统计
被引频次:17[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.hfcas.ac.cn:8080/handle/334002/21169
专题中科院固体物理研究所
作者单位1.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
2.Chinese Acad Sci, Inst Solid State Phys, Anhui Key Lab Nanomat & Nanotechnol, Hefei 230031, Peoples R China
3.Univ Sci & Technol China, Dept Mat Sci & Engn, Hefei 230026, Peoples R China
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GB/T 7714
Cai, Yunyu,Yuan, Qinglin,Ye, Yixing,et al. Coexistence of resistance switching and negative differential resistance in the alpha-Fe2O3 nanorod film[J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS,2016,18(26):17440-17445.
APA Cai, Yunyu,Yuan, Qinglin,Ye, Yixing,Liu, Jun,&Liang, Changhao.(2016).Coexistence of resistance switching and negative differential resistance in the alpha-Fe2O3 nanorod film.PHYSICAL CHEMISTRY CHEMICAL PHYSICS,18(26),17440-17445.
MLA Cai, Yunyu,et al."Coexistence of resistance switching and negative differential resistance in the alpha-Fe2O3 nanorod film".PHYSICAL CHEMISTRY CHEMICAL PHYSICS 18.26(2016):17440-17445.
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