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Coexistence of resistance switching and negative differential resistance in the alpha-Fe2O3 nanorod film
Cai, Yunyu1,2; Yuan, Qinglin1,2,3; Ye, Yixing1,2; Liu, Jun1,2; Liang, Changhao1,2,3
2016-07-14
Source PublicationPHYSICAL CHEMISTRY CHEMICAL PHYSICS
AbstractWe report the coexistence of resistance switching (RS) behavior and the negative differential resistance (NDR) phenomenon in the alpha-Fe2O3 nanorod film grown in situ on a fluorine-doped tin oxide glass substrate. The reversible switching of the low-and high-resistance states (LRS and HRS, respectively) of the film device can be excited simply by applying bias voltage. The switching from the HRS to the LRS was initiated in the negative bias region, whereas the NDR process followed by the reversion of the HRS occurred in the positive bias region. With the increase in compliant current (CC), the carrier conduction models of the LRS and the HRS both changed and the current-voltage (I-V) relationships in the NDR region were seriously affected by the thermal process according to the level of applied CC. The co-existence of RS and NDR was possibly caused by defects during migration, such as oxygen vacancies and interstitial iron ions, which were formed in the alpha-Fe2O3 nanorod film. This work provided information on the ongoing effort toward developing novel electrical features of advanced transition metal oxide devices.
SubtypeArticle
WOS HeadingsScience & Technology ; Physical Sciences
DOI10.1039/c6cp02192a
WOS KeywordOXIDE ; BEHAVIOR ; DEVICES ; MEMORY
Indexed BySCI
Language英语
Funding OrganizationNational Basic Research Program of China(2014CB931704) ; National Basic Research Program of China(2014CB931704) ; National Basic Research Program of China(2014CB931704) ; National Basic Research Program of China(2014CB931704) ; National Basic Research Program of China(2014CB931704) ; National Basic Research Program of China(2014CB931704) ; National Basic Research Program of China(2014CB931704) ; National Basic Research Program of China(2014CB931704) ; National Natural Science Foundation of China (NSFC)(51371166 ; National Natural Science Foundation of China (NSFC)(51371166 ; National Natural Science Foundation of China (NSFC)(51371166 ; National Natural Science Foundation of China (NSFC)(51371166 ; National Natural Science Foundation of China (NSFC)(51371166 ; National Natural Science Foundation of China (NSFC)(51371166 ; National Natural Science Foundation of China (NSFC)(51371166 ; National Natural Science Foundation of China (NSFC)(51371166 ; China Postdoctoral Science Foundation ; China Postdoctoral Science Foundation ; China Postdoctoral Science Foundation ; China Postdoctoral Science Foundation ; China Postdoctoral Science Foundation ; China Postdoctoral Science Foundation ; China Postdoctoral Science Foundation ; China Postdoctoral Science Foundation ; 51571186 ; 51571186 ; 51571186 ; 51571186 ; 51571186 ; 51571186 ; 51571186 ; 51571186 ; 11404338 ; 11404338 ; 11404338 ; 11404338 ; 11404338 ; 11404338 ; 11404338 ; 11404338 ; 11304315 ; 11304315 ; 11304315 ; 11304315 ; 11304315 ; 11304315 ; 11304315 ; 11304315 ; 51401206 ; 51401206 ; 51401206 ; 51401206 ; 51401206 ; 51401206 ; 51401206 ; 51401206 ; 11504375) ; 11504375) ; 11504375) ; 11504375) ; 11504375) ; 11504375) ; 11504375) ; 11504375)
WOS Research AreaChemistry ; Physics
WOS SubjectChemistry, Physical ; Physics, Atomic, Molecular & Chemical
WOS IDWOS:000379482100039
Citation statistics
Cited Times:10[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.hfcas.ac.cn:8080/handle/334002/21169
Collection中科院固体物理研究所
Affiliation1.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
2.Chinese Acad Sci, Inst Solid State Phys, Anhui Key Lab Nanomat & Nanotechnol, Hefei 230031, Peoples R China
3.Univ Sci & Technol China, Dept Mat Sci & Engn, Hefei 230026, Peoples R China
Recommended Citation
GB/T 7714
Cai, Yunyu,Yuan, Qinglin,Ye, Yixing,et al. Coexistence of resistance switching and negative differential resistance in the alpha-Fe2O3 nanorod film[J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS,2016,18(26):17440-17445.
APA Cai, Yunyu,Yuan, Qinglin,Ye, Yixing,Liu, Jun,&Liang, Changhao.(2016).Coexistence of resistance switching and negative differential resistance in the alpha-Fe2O3 nanorod film.PHYSICAL CHEMISTRY CHEMICAL PHYSICS,18(26),17440-17445.
MLA Cai, Yunyu,et al."Coexistence of resistance switching and negative differential resistance in the alpha-Fe2O3 nanorod film".PHYSICAL CHEMISTRY CHEMICAL PHYSICS 18.26(2016):17440-17445.
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