Institutional Repository of Chinese Acad Sci, Inst Solid State Phys, Hefei 230031, Anhui, Peoples R China
Thermoelectric Performance for SnSe Hot-Pressed at Different Temperature | |
Li, D.; Li, J. C.; Qin, X. Y.; Zhang, J.; Song, C. J.; Wang, L.; Xin, H. X. | |
2017 | |
发表期刊 | JOURNAL OF ELECTRONIC MATERIALS |
摘要 | Herein, nanoparticles SnSe are prepared by fusion method together with ballmilling technique and the effect of hot-pressing temperatures on the thermoelectric properties of the dense materials is explored. Due to the optimization of carrier concentration, the peak figure of merit (ZT) value of the compacted material reaches 0.73 for SnSe sample hot-pressed at 400 degrees C and 450 degrees C. The present investigation indicates that the thermoelectric performance of the SnSe compound can be significantly improved by sintering with suitable temperature. |
文章类型 | Article |
关键词 | Thermoelectric Properties Hot-pressing |
WOS标题词 | Science & Technology ; Technology ; Physical Sciences |
DOI | 10.1007/s11664-016-4919-1 |
收录类别 | SCI |
语种 | 英语 |
项目资助者 | Natural Science Foundation of China(51672278 ; Natural Science Foundation of China(51672278 ; Natural Science Foundation of China(51672278 ; Natural Science Foundation of China(51672278 ; Natural Science Foundation of China(51672278 ; Natural Science Foundation of China(51672278 ; Natural Science Foundation of China(51672278 ; Natural Science Foundation of China(51672278 ; AnHui Provincial Natural Science Foundation(1608085MA17 ; AnHui Provincial Natural Science Foundation(1608085MA17 ; AnHui Provincial Natural Science Foundation(1608085MA17 ; AnHui Provincial Natural Science Foundation(1608085MA17 ; AnHui Provincial Natural Science Foundation(1608085MA17 ; AnHui Provincial Natural Science Foundation(1608085MA17 ; AnHui Provincial Natural Science Foundation(1608085MA17 ; AnHui Provincial Natural Science Foundation(1608085MA17 ; Institute of Solid State Physics(2016DFS01 ; Institute of Solid State Physics(2016DFS01 ; Institute of Solid State Physics(2016DFS01 ; Institute of Solid State Physics(2016DFS01 ; Institute of Solid State Physics(2016DFS01 ; Institute of Solid State Physics(2016DFS01 ; Institute of Solid State Physics(2016DFS01 ; Institute of Solid State Physics(2016DFS01 ; 11674322 ; 11674322 ; 11674322 ; 11674322 ; 11674322 ; 11674322 ; 11674322 ; 11674322 ; 1408085QB45) ; 1408085QB45) ; 1408085QB45) ; 1408085QB45) ; 1408085QB45) ; 1408085QB45) ; 1408085QB45) ; 1408085QB45) ; 2016DFY01 ; 2016DFY01 ; 2016DFY01 ; 2016DFY01 ; 2016DFY01 ; 2016DFY01 ; 2016DFY01 ; 2016DFY01 ; 11374306) ; 11374306) ; 11374306) ; 11374306) ; 11374306) ; 11374306) ; 11374306) ; 11374306) ; 2016DFY11) ; 2016DFY11) ; 2016DFY11) ; 2016DFY11) ; 2016DFY11) ; 2016DFY11) ; 2016DFY11) ; 2016DFY11) |
WOS研究方向 | Engineering ; Materials Science ; Physics |
WOS类目 | Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied |
WOS记录号 | WOS:000391126900010 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.hfcas.ac.cn:8080/handle/334002/21320 |
专题 | 中科院固体物理研究所 中科院固体物理研究所_专题未命名 |
作者单位 | Chinese Acad Sci, Key Lab Mat Phys, Inst Solid State Phys, Hefei 230031, Peoples R China |
推荐引用方式 GB/T 7714 | Li, D.,Li, J. C.,Qin, X. Y.,et al. Thermoelectric Performance for SnSe Hot-Pressed at Different Temperature[J]. JOURNAL OF ELECTRONIC MATERIALS,2017,46(1):79-84. |
APA | Li, D..,Li, J. C..,Qin, X. Y..,Zhang, J..,Song, C. J..,...&Xin, H. X..(2017).Thermoelectric Performance for SnSe Hot-Pressed at Different Temperature.JOURNAL OF ELECTRONIC MATERIALS,46(1),79-84. |
MLA | Li, D.,et al."Thermoelectric Performance for SnSe Hot-Pressed at Different Temperature".JOURNAL OF ELECTRONIC MATERIALS 46.1(2017):79-84. |
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