Thermoelectric Performance for SnSe Hot-Pressed at Different Temperature

doi:10.1007/s11664-016-4919-1

HFCAS OpenIR > 中科院固体物理研究所

	Thermoelectric Performance for SnSe Hot-Pressed at Different Temperature
	Li, D.; Li, J. C.; Qin, X. Y.; Zhang, J.; Song, C. J.; Wang, L.; Xin, H. X.
	2017
发表期刊	JOURNAL OF ELECTRONIC MATERIALS
摘要	Herein, nanoparticles SnSe are prepared by fusion method together with ballmilling technique and the effect of hot-pressing temperatures on the thermoelectric properties of the dense materials is explored. Due to the optimization of carrier concentration, the peak figure of merit (ZT) value of the compacted material reaches 0.73 for SnSe sample hot-pressed at 400 degrees C and 450 degrees C. The present investigation indicates that the thermoelectric performance of the SnSe compound can be significantly improved by sintering with suitable temperature.
文章类型	Article
关键词	Thermoelectric Properties Hot-pressing
WOS标题词	Science & Technology ; Technology ; Physical Sciences
DOI	10.1007/s11664-016-4919-1
收录类别	SCI
语种	英语
项目资助者	Natural Science Foundation of China(51672278 ; Natural Science Foundation of China(51672278 ; Natural Science Foundation of China(51672278 ; Natural Science Foundation of China(51672278 ; Natural Science Foundation of China(51672278 ; Natural Science Foundation of China(51672278 ; Natural Science Foundation of China(51672278 ; Natural Science Foundation of China(51672278 ; AnHui Provincial Natural Science Foundation(1608085MA17 ; AnHui Provincial Natural Science Foundation(1608085MA17 ; AnHui Provincial Natural Science Foundation(1608085MA17 ; AnHui Provincial Natural Science Foundation(1608085MA17 ; AnHui Provincial Natural Science Foundation(1608085MA17 ; AnHui Provincial Natural Science Foundation(1608085MA17 ; AnHui Provincial Natural Science Foundation(1608085MA17 ; AnHui Provincial Natural Science Foundation(1608085MA17 ; Institute of Solid State Physics(2016DFS01 ; Institute of Solid State Physics(2016DFS01 ; Institute of Solid State Physics(2016DFS01 ; Institute of Solid State Physics(2016DFS01 ; Institute of Solid State Physics(2016DFS01 ; Institute of Solid State Physics(2016DFS01 ; Institute of Solid State Physics(2016DFS01 ; Institute of Solid State Physics(2016DFS01 ; 11674322 ; 11674322 ; 11674322 ; 11674322 ; 11674322 ; 11674322 ; 11674322 ; 11674322 ; 1408085QB45) ; 1408085QB45) ; 1408085QB45) ; 1408085QB45) ; 1408085QB45) ; 1408085QB45) ; 1408085QB45) ; 1408085QB45) ; 2016DFY01 ; 2016DFY01 ; 2016DFY01 ; 2016DFY01 ; 2016DFY01 ; 2016DFY01 ; 2016DFY01 ; 2016DFY01 ; 11374306) ; 11374306) ; 11374306) ; 11374306) ; 11374306) ; 11374306) ; 11374306) ; 11374306) ; 2016DFY11) ; 2016DFY11) ; 2016DFY11) ; 2016DFY11) ; 2016DFY11) ; 2016DFY11) ; 2016DFY11) ; 2016DFY11)
WOS研究方向	Engineering ; Materials Science ; Physics
WOS类目	Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000391126900010
引用统计	被引频次：7[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.hfcas.ac.cn:8080/handle/334002/21320
专题	中科院固体物理研究所中科院固体物理研究所_专题未命名
作者单位	Chinese Acad Sci, Key Lab Mat Phys, Inst Solid State Phys, Hefei 230031, Peoples R China
推荐引用方式 GB/T 7714	Li, D.,Li, J. C.,Qin, X. Y.,et al. Thermoelectric Performance for SnSe Hot-Pressed at Different Temperature[J]. JOURNAL OF ELECTRONIC MATERIALS,2017,46(1):79-84.
APA	Li, D..,Li, J. C..,Qin, X. Y..,Zhang, J..,Song, C. J..,...&Xin, H. X..(2017).Thermoelectric Performance for SnSe Hot-Pressed at Different Temperature.JOURNAL OF ELECTRONIC MATERIALS,46(1),79-84.
MLA	Li, D.,et al."Thermoelectric Performance for SnSe Hot-Pressed at Different Temperature".JOURNAL OF ELECTRONIC MATERIALS 46.1(2017):79-84.

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