Anisotropic-strain-controlled metal-insulator transition in epitaxial NdNiO3 films grown on orthorhombic NdGaO3 substrates

doi:10.1063/1.4826678

HFCAS OpenIR > 中科院强磁场科学中心

	Anisotropic-strain-controlled metal-insulator transition in epitaxial NdNiO3 films grown on orthorhombic NdGaO3 substrates
	Lian, X. K.1,2; Chen, F.1,2 ; Tan, X. L.1,2; Chen, P. F.1,2; Wang, L. F.1,2; Gao, G. Y.1,2; Jin, S. W.3; Wu, W. B.1,2
	2013-10-21
发表期刊	APPLIED PHYSICS LETTERS
摘要	NdNiO3 (NNO) films were grown by pulsed laser deposition on orthorhombic (110)-, (001)-, and (100)-oriented NdGaO3 substrates. It is found that all the films are tensile-strained but show dramatically different metal-insulator transition (MIT) temperatures (T-MI) (160-280 K), as compared with the NNO bulk (similar to 200 K). A high resemblance in the sharpness of MIT and lattice variation across the MIT was observed. The T-MI is highly dependent on the magnitude of the orthorhombic distortion induced by the different substrate surface plane and tends to recover the bulk value after annealing. Our results suggest that the anisotropic epitaxial strain can effectively tune the MIT of NNO films, and the NiO6 octahedra rotation and deformation involved in accommodating the tensile strain might cause the different T-MI. (C) 2013 AIP Publishing LLC.
文章类型	Article
WOS标题词	Science & Technology ; Physical Sciences
DOI	10.1063/1.4826678
关键词[WOS]	PULSED-LASER DEPOSITION ; EQUALS RARE-EARTH ; THIN-FILMS ; RNIO3 PEROVSKITES ; CHARGE DISPROPORTIONATION ; TRANSPORT-PROPERTIES ; PRESSURE-DEPENDENCE ; NEUTRON-DIFFRACTION
收录类别	SCI
语种	英语
WOS研究方向	Physics
WOS类目	Physics, Applied
WOS记录号	WOS:000326455100042
引用统计	被引频次：21[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.hfcas.ac.cn:8080/handle/334002/21573
专题	中科院强磁场科学中心
作者单位	1.Chinese Acad Sci, High Field Magnet Lab, Hefei 230026, Peoples R China 2.Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Peoples R China 3.Anhui Univ, Sch Phys & Mat Sci, Hefei 230039, Peoples R China
第一作者单位	中科院强磁场科学中心
推荐引用方式 GB/T 7714	Lian, X. K.,Chen, F.,Tan, X. L.,et al. Anisotropic-strain-controlled metal-insulator transition in epitaxial NdNiO3 films grown on orthorhombic NdGaO3 substrates[J]. APPLIED PHYSICS LETTERS,2013,103(17).
APA	Lian, X. K..,Chen, F..,Tan, X. L..,Chen, P. F..,Wang, L. F..,...&Wu, W. B..(2013).Anisotropic-strain-controlled metal-insulator transition in epitaxial NdNiO3 films grown on orthorhombic NdGaO3 substrates.APPLIED PHYSICS LETTERS,103(17).
MLA	Lian, X. K.,et al."Anisotropic-strain-controlled metal-insulator transition in epitaxial NdNiO3 films grown on orthorhombic NdGaO3 substrates".APPLIED PHYSICS LETTERS 103.17(2013).