Institutional Repository of Anhui Institute of Optics and Fine Mechanics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, Anhui 230031, China
| Room temperature deposition of amorphous p-type CuFeO2 and fabrication of CuFeO2/n-Si heterojunction by RF sputtering method | |
Zhu, Tao1,2; Deng, Zanhong1,2 ; Fang, Xiaodong1,2,3; Dong, Weiwei1,2; Shao, Jingzhen1,2; Tao, Ruhua1,2; Wang, Shimao1,2
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| 2016-06-01 | |
| 发表期刊 | BULLETIN OF MATERIALS SCIENCE
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| 摘要 | Transparent conducting amorphous p-type CuFeO2 (CFO) thin film was prepared by radio-frequency (RF) magnetron sputtering method at room temperature using polycrystalline CuFeO2 target. Amorphous structure of as-deposited film was confirmed by XRD. XPS analysis convinced that the chemical state of Cu+ and Fe3+ in the film, and the chemical composition of the thin films is close to the stoichiometry of CuFeO2. Surface morphology of the film was analysed by SEM studies. p-type nature and concentration of carriers was investigated by Hall effect measurement. The p-n heterojunction in the structure of Al/n-Si/p-CuFeO2/Al showed good rectifying behaviour with a forward and reverse currents ratio of 555 at 2 V. The turn-on voltage and reverse leakage current values were found to be 0.9 V and 4 mu A at -2 V. Further, the conduction mechanism of forward bias voltage was controlled by thermionic emission (TE) and trap-space charge limited current (TCLC) mechanisms. |
| 文章类型 | Article |
| 关键词 | Rf Sputtering Amorphous Cufeo2 P-n Heterojunction |
| WOS标题词 | Science & Technology ; Technology |
| DOI | 10.1007/s12034-016-1209-8 |
| 关键词[WOS] | THIN-FILMS ; TRANSPORT-PROPERTIES ; OPTOELECTRONIC PROPERTIES ; LASER DEPOSITION ; DELAFOSSITE ; SEMICONDUCTOR ; JUNCTION ; CRYSTAL ; CUFE2O4 ; COPPER |
| 收录类别 | SCI |
| 语种 | 英语 |
| 项目资助者 | National Natural Science Foundation(51172237 ; National Natural Science Foundation(51172237 ; National Natural Science Foundation(51172237 ; National Natural Science Foundation(51172237 ; National Natural Science Foundation(51172237 ; National Natural Science Foundation(51172237 ; National Natural Science Foundation(51172237 ; National Natural Science Foundation(51172237 ; National Natural Science Foundation(51172237 ; National Natural Science Foundation(51172237 ; National Natural Science Foundation(51172237 ; National Natural Science Foundation(51172237 ; National Natural Science Foundation(51172237 ; National Natural Science Foundation(51172237 ; National Natural Science Foundation(51172237 ; National Natural Science Foundation(51172237 ; 61306083) ; 61306083) ; 61306083) ; 61306083) ; 61306083) ; 61306083) ; 61306083) ; 61306083) ; 61306083) ; 61306083) ; 61306083) ; 61306083) ; 61306083) ; 61306083) ; 61306083) ; 61306083) |
| WOS研究方向 | Materials Science |
| WOS类目 | Materials Science, Multidisciplinary |
| WOS记录号 | WOS:000378899300035 |
| 引用统计 | |
| 文献类型 | 期刊论文 |
| 条目标识符 | http://ir.hfcas.ac.cn:8080/handle/334002/21589 |
| 专题 | 中科院安徽光学精密机械研究所 |
| 作者单位 | 1.Chinese Acad Sci, Anhui Inst Opt & Fine Mech, Anhui Prov Key Lab Photon Devices & Mat, Hefei 230031, Peoples R China 2.Chinese Acad Sci, Key Lab Novel Thin Film Solar Cells, Hefei 230031, Peoples R China 3.Univ Sci & Technol China, Hefei 230026, Peoples R China |
| 第一作者单位 | 中科院安徽光学精密机械研究所 |
| 推荐引用方式 GB/T 7714 | Zhu, Tao,Deng, Zanhong,Fang, Xiaodong,et al. Room temperature deposition of amorphous p-type CuFeO2 and fabrication of CuFeO2/n-Si heterojunction by RF sputtering method[J]. BULLETIN OF MATERIALS SCIENCE,2016,39(3):883-887. |
| APA | Zhu, Tao.,Deng, Zanhong.,Fang, Xiaodong.,Dong, Weiwei.,Shao, Jingzhen.,...&Wang, Shimao.(2016).Room temperature deposition of amorphous p-type CuFeO2 and fabrication of CuFeO2/n-Si heterojunction by RF sputtering method.BULLETIN OF MATERIALS SCIENCE,39(3),883-887. |
| MLA | Zhu, Tao,et al."Room temperature deposition of amorphous p-type CuFeO2 and fabrication of CuFeO2/n-Si heterojunction by RF sputtering method".BULLETIN OF MATERIALS SCIENCE 39.3(2016):883-887. |
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| Room temperature dep（5986KB） | 期刊论文 | 作者接受稿 | 开放获取 | CC BY-NC-SA | 浏览 下载 | |
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