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	Evolution of interface chemistry and dielectric properties of HfO2/Ge gate stack modulated by Gd incorporation and thermal annealing
	He, Gang1; Zhang, Jiwen1; Sun, Zhaoqi1; Lv, Jianguo2; Chen, Hanshuang1; Liu, Mao3
	2016-02-01
发表期刊	AIP ADVANCES
摘要	In current work, effects of rapid thermal annealing (RTA) on the interface chemistry and electrical properties of Gd-doped HfO2 (HGO)/Ge stack have been investigated systematically. It has been demonstrated that the presence of GeOx interfacial layer between HfGdO and Ge is unavoidable and appropriate annealing can improve metal-oxide-semiconductor device characteristics such as interface state density, accumulation capacitance, frequency dispersion, and leakage current. The involved leakage current conduction mechanisms for metal-oxide-semiconductor (MOS) capacitors based on sputtered HGO/Ge gate stacks with optimal annealed temperature also have been discussed in detail. As a result, the Al/HGO barrier height and the band offset of HGO/Ge gate stack have been determined precisely. (C) 2016 Author(s).
文章类型	Article
WOS标题词	Science & Technology ; Technology ; Physical Sciences
DOI	10.1063/1.4941698
关键词[WOS]	ELECTRICAL-PROPERTIES ; MOS CAPACITORS ; THIN-FILMS ; DEPOSITION ; TEMPERATURE ; OXIDATION ; QUALITY ; PLASMA ; LAYER
收录类别	SCI
语种	英语
项目资助者	National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Outstanding Young Scientific Foundation and Youth Science Research Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation and Youth Science Research Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation and Youth Science Research Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation and Youth Science Research Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation and Youth Science Research Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation and Youth Science Research Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation and Youth Science Research Foundation of Anhui University(KJJQ1103) ; Outstanding Young Scientific Foundation and Youth Science Research Foundation of Anhui University(KJJQ1103) ; Anhui University ; Anhui University ; Anhui University ; Anhui University ; Anhui University ; Anhui University ; Anhui University ; Anhui University ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; 11474284)
WOS研究方向	Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000371739000003
引用统计	被引频次：11[WOS]   [WOS记录]     [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.hfcas.ac.cn:8080/handle/334002/22069
专题	中科院固体物理研究所
作者单位	1.Anhui Univ, Radiat Detect Mat & Devices Lab, Sch Phys & Mat Sci, Hefei 230601, Peoples R China 2.Hefei Normal Univ, Dept Phys & Elect Engn, Hefei 230061, Peoples R China 3.Chinese Acad Sci, Inst Solid State Phys, Anhui Key Lab Nanomat & Nanostruct, Key Lab Mat Phys, Hefei 230031, Peoples R China
推荐引用方式 GB/T 7714	He, Gang,Zhang, Jiwen,Sun, Zhaoqi,et al. Evolution of interface chemistry and dielectric properties of HfO2/Ge gate stack modulated by Gd incorporation and thermal annealing[J]. AIP ADVANCES,2016,6(2):1-7.
APA	He, Gang,Zhang, Jiwen,Sun, Zhaoqi,Lv, Jianguo,Chen, Hanshuang,&Liu, Mao.(2016).Evolution of interface chemistry and dielectric properties of HfO2/Ge gate stack modulated by Gd incorporation and thermal annealing.AIP ADVANCES,6(2),1-7.
MLA	He, Gang,et al."Evolution of interface chemistry and dielectric properties of HfO2/Ge gate stack modulated by Gd incorporation and thermal annealing".AIP ADVANCES 6.2(2016):1-7.

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