Institutional Repository of Chinese Acad Sci, Inst Solid State Phys， Hefei 230031, Anhui, Peoples R China
| Microstructure, optical and electrical properties of solution-derived peroxo-zirconium oxide gate dielectrics for CMOS application | |
Dongqi Xiao1; Gang He1; Zhaoqi Sun1; Jianguo Lv2; Peng Jin1; Changyong Zheng1; Mao Liu3
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| 2016 | |
| 发表期刊 | CERAMICS INTERNATIONAL
 |
| WOS记录号 | WOS:000365369500090 |
| 引用统计 | |
| 文献类型 | 期刊论文 |
| 条目标识符 | http://ir.hfcas.ac.cn:8080/handle/334002/22137 |
| 专题 | 中科院固体物理研究所 |
| 作者单位 | 1.School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei 230601, China 2.Department of Physics and Electronic Engineering, Hefei Normal University, Hefei 230061, China 3.Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructure, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China |
| 推荐引用方式 GB/T 7714 | Dongqi Xiao,Gang He,Zhaoqi Sun,et al. Microstructure, optical and electrical properties of solution-derived peroxo-zirconium oxide gate dielectrics for CMOS application[J]. CERAMICS INTERNATIONAL,2016,42(1):759-766. |
| APA | Dongqi Xiao.,Gang He.,Zhaoqi Sun.,Jianguo Lv.,Peng Jin.,...&Mao Liu.(2016).Microstructure, optical and electrical properties of solution-derived peroxo-zirconium oxide gate dielectrics for CMOS application.CERAMICS INTERNATIONAL,42(1),759-766. |
| MLA | Dongqi Xiao,et al."Microstructure, optical and electrical properties of solution-derived peroxo-zirconium oxide gate dielectrics for CMOS application".CERAMICS INTERNATIONAL 42.1(2016):759-766. |
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| 文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
| Microstructure, opti（1842KB） | 期刊论文 | 作者接受稿 | 开放获取 | CC BY-NC-SA | 浏览 下载 | |
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