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Modification of electrical properties and carrier transportation mechanism of ALD-derived HfO2/Si gate stacks by Al2O3 incorporation
Gao, Juan1,2; He, Gang1; Sun, Zhaoqi1; Chen, Hanshuang1; Zheng, Changyong1; Jin, Peng1; Xiao, Dongqi1; Liu, Mao3
2016-05-15
发表期刊JOURNAL OF ALLOYS AND COMPOUNDS
摘要Effect of Al2O3 incorporation on the electrical properties and carrier transportation of atomic-layer-deposited (ALD) HfAlO high-k gate dielectrics on Si substrates have been investigated. Electrical analyses indicate that interfacial properties of HfAlO/Si gate stack have been improved and leakage current is reduced after Al2O3 incorporation into HfO2. Additionally, the HfAlO sample with precursor ratio (TEMAH: TMA) of 4:2 exhibits the lowest interface state density (D-it) of 3.6 x 10(11) cm(-2) eV(-1), the lowest border trapped oxide charge density (N-bt) of 2.4 x 10(11) cm(-2), the lower density of oxide charge (Q(ox)) of 0.9 x 10(12) cm(-2), and the lowest frequency dispersion of 0.15%. In addition, the carrier transportation mechanism for both HfO2 and HfAlO has been investigated systematically. Based on the analysis, it can be concluded that Poole-Frenkle (P-F) emission is main conduction mechanism at the low electric field, and direct tunneling (D-T)dominates the conduction mechanism at the high field, respectively. (C) 2016 Elsevier B.V. All rights reserved.
文章类型Article
关键词High-k Gate Dielectric Atomic-layer-deposition Electrical Properties Carrier Transportation Mechanism Incorporation
WOS标题词Science & Technology ; Physical Sciences ; Technology
DOI10.1016/j.jallcom.2016.01.171
关键词[WOS]TEMPERATURE-DEPENDENCE ; LEAKAGE CURRENT ; DIELECTRICS ; OXIDE ; FILMS ; SI ; CAPACITORS ; THICKNESS
收录类别SCI
语种英语
项目资助者National Key Project of Fundamental Research(2013CB632705 ; National Key Project of Fundamental Research(2013CB632705 ; National Key Project of Fundamental Research(2013CB632705 ; National Key Project of Fundamental Research(2013CB632705 ; National Key Project of Fundamental Research(2013CB632705 ; National Key Project of Fundamental Research(2013CB632705 ; National Key Project of Fundamental Research(2013CB632705 ; National Key Project of Fundamental Research(2013CB632705 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Outstanding Young Scientific Foundation ; Outstanding Young Scientific Foundation ; Outstanding Young Scientific Foundation ; Outstanding Young Scientific Foundation ; Outstanding Young Scientific Foundation ; Outstanding Young Scientific Foundation ; Outstanding Young Scientific Foundation ; Outstanding Young Scientific Foundation ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; 2012CB932303) ; 2012CB932303) ; 2012CB932303) ; 2012CB932303) ; 2012CB932303) ; 2012CB932303) ; 2012CB932303) ; 2012CB932303) ; 11474284 ; 11474284 ; 11474284 ; 11474284 ; 11474284 ; 11474284 ; 11474284 ; 11474284 ; 51102072 ; 51102072 ; 51102072 ; 51102072 ; 51102072 ; 51102072 ; 51102072 ; 51102072 ; 51502005) ; 51502005) ; 51502005) ; 51502005) ; 51502005) ; 51502005) ; 51502005) ; 51502005)
WOS研究方向Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering
WOS类目Chemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS记录号WOS:000371556400053
引用统计
被引频次：21[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.hfcas.ac.cn:8080/handle/334002/22144
专题中科院固体物理研究所
作者单位1.Anhui Univ, Radiat Detect Mat & Devices Lab, Sch Phys & Mat Sci, Hefei 230601, Peoples R China
2.Anhui Univ Sci & Technol, Sch Sci, Huainan 232001, Peoples R China
3.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Anhui Key Lab Nanomat & Nanostruct, Hefei 230031, Peoples R China
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GB/T 7714		 Gao, Juan,He, Gang,Sun, Zhaoqi,et al. Modification of electrical properties and carrier transportation mechanism of ALD-derived HfO2/Si gate stacks by Al2O3 incorporation[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2016,667(无):352-358.
APA Gao, Juan.,He, Gang.,Sun, Zhaoqi.,Chen, Hanshuang.,Zheng, Changyong.,...&Liu, Mao.(2016).Modification of electrical properties and carrier transportation mechanism of ALD-derived HfO2/Si gate stacks by Al2O3 incorporation.JOURNAL OF ALLOYS AND COMPOUNDS,667(无),352-358.
MLA Gao, Juan,et al."Modification of electrical properties and carrier transportation mechanism of ALD-derived HfO2/Si gate stacks by Al2O3 incorporation".JOURNAL OF ALLOYS AND COMPOUNDS 667.无(2016):352-358.
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