Annealing assisted substrate coherency and high-temperature antiferromagnetic insulating transition in epitaxial La0.67Ca0.33MnO3/NdGaO3(001) films

doi:10.1063/1.4804541

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	Annealing assisted substrate coherency and high-temperature antiferromagnetic insulating transition in epitaxial La0.67Ca0.33MnO3/NdGaO3(001) films
	Wang, L. F.1; Tan, X. L.; Chen, P. F.; Zhi, B. W.; Chen, B. B.; Huang, Z.; Gao, G. Y.; Wu, W. B.
	2013-05-01
发表期刊	AIP ADVANCES
摘要	Bulk La0.67Ca0.33MnO3 (LCMO) and NdGaO3 (NGO) have the same Pbnm symmetry but different orthorhombic lattice distortions, yielding an anisotropic strain state in the LCMO epitaxial film grown on the NGO(001) substrate. The films are optimally doped in a ferromagnetic-metal ground state, after being ex-situ annealed in oxygen atmosphere, however, they show strikingly an antiferromagnetic-insulating (AFI) transition near 250 K, leading to a phase separation state with tunable phase instability at the temperatures below. To explain this drastic strain effect, the films with various thicknesses were ex-situ annealed under various annealing parameters. We demonstrate that the ex-situ annealing can surprisingly improve the epitaxial quality, resulting in the films with true substrate coherency and the AFI ground state. And the close linkage between the film morphology and electronic phase evolution implies that the strain-mediated octahedral deformation and rotation could be assisted by ex-situ annealing, and moreover, play a key role in controlling the properties of oxide heterostructures. (C) 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
文章类型	Article
WOS标题词	Science & Technology ; Technology ; Physical Sciences
DOI	10.1063/1.4804541
关键词[WOS]	SRRUO3 THIN-FILMS ; PHYSICAL-PROPERTIES ; OXIDE HETEROSTRUCTURES ; STRAIN ; LA1-XCAXMNO3 ; MANGANITES ; INTERFACES ; GROWTH ; NDGAO3
收录类别	SCI
语种	英语
WOS研究方向	Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000320673600006
引用统计	被引频次：21[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.hfcas.ac.cn:8080/handle/334002/22195
专题	中科院强磁场科学中心
作者单位	1.Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Peoples R China 2.Chinese Acad Sci, High Field Magnet Lab, Hefei 230026, Peoples R China
推荐引用方式 GB/T 7714	Wang, L. F.,Tan, X. L.,Chen, P. F.,et al. Annealing assisted substrate coherency and high-temperature antiferromagnetic insulating transition in epitaxial La0.67Ca0.33MnO3/NdGaO3(001) films[J]. AIP ADVANCES,2013,3(5).
APA	Wang, L. F..,Tan, X. L..,Chen, P. F..,Zhi, B. W..,Chen, B. B..,...&Wu, W. B..(2013).Annealing assisted substrate coherency and high-temperature antiferromagnetic insulating transition in epitaxial La0.67Ca0.33MnO3/NdGaO3(001) films.AIP ADVANCES,3(5).
MLA	Wang, L. F.,et al."Annealing assisted substrate coherency and high-temperature antiferromagnetic insulating transition in epitaxial La0.67Ca0.33MnO3/NdGaO3(001) films".AIP ADVANCES 3.5(2013).