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Pressure-induced structural and valence transition in AgO
Hou, Chunju1,2; Botana, Jorge2,3; Zhang, Xu4; Wang, Xianlong5; Miao, Maosheng2,3
2016-06-14
发表期刊PHYSICAL CHEMISTRY CHEMICAL PHYSICS
摘要The pressure-induced evolution of AgO crystal structures and the oxygen environment of Ag atoms were investigated by means of density functional theory with a hybrid functional and a structure prediction method. Under ambient conditions, AgO has two nonequivalent Ag1 and Ag2 sites that adopt linear and square planar oxygen environment configuration, respectively, corresponding to Ag mixed-valence states. The results show that both the coordination environment and the valence state of the Ag1 site are sensitive to pressure and will gradually approach those of the Ag2 site as it increases. The band gap also decreases significantly and at 75 GPa AgO experiences a pressure-induced semiconductor-to-metal transition. At similar to 77 GPa, there is a structural transition from monoclinic (P2(1)/c) to trigonal (R (3) over barm), accompanied by a valence state transition from the mixed-valence state to a single-valence state.
文章类型Article
WOS标题词Science & Technology ; Physical Sciences
DOI10.1039/c6cp02627c
关键词[WOS]AUGMENTED-WAVE METHOD ; ELECTRONIC-STRUCTURE ; METAL-INSULATOR ; RNIO3 ; DIFFRACTION ; PEROVSKITES
收录类别SCI
语种英语
项目资助者National Science Foundation of China (NSAF)(U1230202) ; National Science Foundation of China (NSAF)(U1230202) ; National Science Foundation of China (NSAF)(U1230202) ; National Science Foundation of China (NSAF)(U1230202) ; Special Fund for Theoretical Physics of the National Natural Science Foundation of China(11547026) ; Special Fund for Theoretical Physics of the National Natural Science Foundation of China(11547026) ; Special Fund for Theoretical Physics of the National Natural Science Foundation of China(11547026) ; Special Fund for Theoretical Physics of the National Natural Science Foundation of China(11547026)
WOS研究方向Chemistry ; Physics
WOS类目Chemistry, Physical ; Physics, Atomic, Molecular & Chemical
WOS记录号WOS:000378273500065
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被引频次:2[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.hfcas.ac.cn:8080/handle/334002/22459
专题中科院固体物理研究所
作者单位1.JiangXi Univ Sci & Technol, Sch Sci, Ganzhou 341000, Peoples R China
2.Beijing Computat Sci Res Ctr, Beijing 100094, Peoples R China
3.Calif State Univ Northridge, Dept Chem & Biochem, Northridge, CA 91330 USA
4.Jiangxi Univ Sci & Technol, Sch Mat Sci & Engn, Ganzhou 341000, Peoples R China
5.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
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GB/T 7714
Hou, Chunju,Botana, Jorge,Zhang, Xu,et al. Pressure-induced structural and valence transition in AgO[J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS,2016,18(22):15322-15326.
APA Hou, Chunju,Botana, Jorge,Zhang, Xu,Wang, Xianlong,&Miao, Maosheng.(2016).Pressure-induced structural and valence transition in AgO.PHYSICAL CHEMISTRY CHEMICAL PHYSICS,18(22),15322-15326.
MLA Hou, Chunju,et al."Pressure-induced structural and valence transition in AgO".PHYSICAL CHEMISTRY CHEMICAL PHYSICS 18.22(2016):15322-15326.
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