Magnetocapacitance in CdCr1.8In0.2S4 Single Crystal Annealed in Cadmium Vapor

doi:10.1109/TMAG.2016.2538286

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	Magnetocapacitance in CdCr1.8In0.2S4 Single Crystal Annealed in Cadmium Vapor
	Xie, Yuanmiao 1; Chen, Xuliang2,3 ; Zhang, Zhitao 3; Song, Wenhai3 ; Zhou, Shengqiang 4; Yang, Zhaorong2,3,5
	2016-07-01
发表期刊	IEEE TRANSACTIONS ON MAGNETICS
摘要	CdCr2S4 single crystal was reported by Hemberger et al. to be multiferroic with the evidences of relaxor ferroelectricity and colossal magnetocapacitance (CMC), but whether these effects are intrinsic is under debate. Recently, we reported a one-to-one correlation between CMC and colossal magnetoresistance (CMR) in CdCr2S4 polycrystalline samples, and argued that CMC could be explained by the superposition of the CMR and the Maxwell-Wagner effects. In this paper, we further examined the magnetic, dielectric, and electric transport properties of CdCr2S4 and CdCr1.8In0.2S4 single crystals before and after annealing in cadmium vapor. The CdCr2S4 single crystal sample has no relaxor ferroelectricity and CMC, and in contrast to the CdCr2S4 single crystal reported by Hemberger et al., only the annealed CdCr1.8In0.2S4 displays CMC, but still does not exhibit the relaxor behavior. At the same time, it also shows CMR. All these results are in accordance with the results of our polycrystalline samples, and further confirm the resistive origin of the CMC in the CdCr2S4 system.
文章类型	Article
关键词	Magnetocapacitance Mangetoresistance Maxwell-wagner Effect Spinel
WOS标题词	Science & Technology ; Technology ; Physical Sciences
DOI	10.1109/TMAG.2016.2538286
关键词[WOS]	CDCR2S4 ; FERROELECTRICITY ; RELAXOR
收录类别	SCI ; ISTP
语种	英语
WOS研究方向	Engineering ; Physics
WOS类目	Engineering, Electrical & Electronic ; Physics, Applied
WOS记录号	WOS:000379924800038
引用统计
文献类型	期刊论文
条目标识符	http://ir.hfcas.ac.cn:8080/handle/334002/22493
专题	中科院强磁场科学中心
作者单位	1.Chinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Peoples R China 2.Chinese Acad Sci, High Field Magnet Lab, Hefei 230031, Peoples R China 3.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China 4.Helmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany 5.Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China
推荐引用方式 GB/T 7714	Xie, Yuanmiao,Chen, Xuliang,Zhang, Zhitao,et al. Magnetocapacitance in CdCr1.8In0.2S4 Single Crystal Annealed in Cadmium Vapor[J]. IEEE TRANSACTIONS ON MAGNETICS,2016,52(7):1-4.
APA	Xie, Yuanmiao,Chen, Xuliang,Zhang, Zhitao,Song, Wenhai,Zhou, Shengqiang,&Yang, Zhaorong.(2016).Magnetocapacitance in CdCr1.8In0.2S4 Single Crystal Annealed in Cadmium Vapor.IEEE TRANSACTIONS ON MAGNETICS,52(7),1-4.
MLA	Xie, Yuanmiao,et al."Magnetocapacitance in CdCr1.8In0.2S4 Single Crystal Annealed in Cadmium Vapor".IEEE TRANSACTIONS ON MAGNETICS 52.7(2016):1-4.

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