| Oxygen vacancy effects in HfO2 - based resistive switching memory: First principle study | |
| Dai, Yuehua1,2; Pan, Zhiyong1,2; Wang, Feifei1,2; Li, Xiaofeng3 | |
| 2016-08-01 | |
| 发表期刊 | AIP ADVANCES
 |
| 摘要 | The work investigated the shape and orientation of oxygen vacancy clusters in HfO2-base resistive random access memory (ReRAM) by using the first-principle method based on the density functional theory. Firstly, the formation energy of different local Vo clusters was calculated in four established orientation systems. Then, the optimized orientation and charger conductor shape were identified by comparing the isosurface plots of partial charge density, formation energy, and the highest isosurface value of oxygen vacancy. The calculated results revealed that the [010] orientation was the optimal migration path of Vo, and the shape of system D4 was the best charge conductor in HfO2, which effectively influenced the SET voltage, formation voltage and the ON/OFF ratio of the device. Afterwards, the PDOS of Hf near Vo and total density of states of the system D4_010 were obtained, revealing the composition of charge conductor was oxygen vacancy instead of metal Hf. Furthermore, the migration barriers of the Vo hopping between neighboring unit cells were calculated along four different orientations. The motion was proved along [010] orientation. The optimal circulation path for Vo migration in the HfO2 super-cell was obtained. (C) 2016 Author(s). |
| 文章类型 | Article |
| WOS标题词 | Science & Technology ; Technology ; Physical Sciences |
| DOI | 10.1063/1.4961229 |
| 关键词[WOS] | OXIDE |
| 收录类别 | SCI |
| 语种 | 英语 |
| 项目资助者 | National Natural Science Foundation of China(61376106) ; National Natural Science Foundation of China(61376106) ; National Natural Science Foundation of China(61376106) ; National Natural Science Foundation of China(61376106) |
| WOS研究方向 | Science & Technology - Other Topics ; Materials Science ; Physics |
| WOS类目 | Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied |
| WOS记录号 | WOS:000383909100053 |
| 引用统计 | |
| 文献类型 | 期刊论文 |
| 条目标识符 | http://ir.hfcas.ac.cn:8080/handle/334002/24250 |
| 专题 | 信息中心 |
| 作者单位 | 1.Anhui Univ, Inst Elect, Hefei 230601, Anhui, Peoples R China 2.Anhui Univ, Informat Project, Hefei 230601, Anhui, Peoples R China 3.Chinese Acad Sci, Hefei Inst Phys Sci, Internet Network Informat Ctr, Hefei 230031, Peoples R China |
| 推荐引用方式 GB/T 7714 | Dai, Yuehua,Pan, Zhiyong,Wang, Feifei,et al. Oxygen vacancy effects in HfO2 - based resistive switching memory: First principle study[J]. AIP ADVANCES,2016,6(8):1-10. |
| APA | Dai, Yuehua,Pan, Zhiyong,Wang, Feifei,&Li, Xiaofeng.(2016).Oxygen vacancy effects in HfO2 - based resistive switching memory: First principle study.AIP ADVANCES,6(8),1-10. |
| MLA | Dai, Yuehua,et al."Oxygen vacancy effects in HfO2 - based resistive switching memory: First principle study".AIP ADVANCES 6.8(2016):1-10. |
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| Oxygen vacancy effec（18271KB） | 期刊论文 | 作者接受稿 | 开放获取 | CC BY-NC-SA | 浏览 下载 | |
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