Removal of Impurities from Metallurgical Grade Silicon During Ga-Si Solvent Refining

doi:10.1007/s12633-014-9269-0

	Removal of Impurities from Metallurgical Grade Silicon During Ga-Si Solvent Refining
	Li, Jingwei1 ; Ban, Boyuan1 ; Li, Yanlei 1; Bai, Xiaolong 2; Zhang, Taotao 1; Chen, Jian1
	2017
发表期刊	SILICON
摘要	Purification of metallurgical grade silicon (MG-Si), using gallium as the impurity getter has been investigated. The technique involves growing Si dendrites from an alloy of MG-Si with Ga, followed by their separation by acid leaching. The morphologies of impurity phases in the MG-Si and the Ga-Si alloy were investigated during the solvent refining process. Effective segregation ratios of B and P in the Ga-Si system were calculated. Most metallic impurities formed silicides, such as Si-Fe-Ga-Mn or Si-Fe-Ga impurity phases, which segregated to the grain boundaries of Si or into the Ga phase during the Ga-Si solvent refining process. After purification, the refined Si is plate-like with <111> crystallographic orientation, and the removal fraction of B and P was 83.28 % and 14.84 % respectively when the Si proportion was 25 % in the Ga-Si alloy. The segregation ratios of B and P were determined to be 0.15 and 0.83 when the solid fraction of Si was 0.25. The effective removal of B and P by a solidification refining process with a Ga-Si melt is clarified.
文章类型	Article
关键词	Ga-si Alloy Metallurgical Grade Silicon Solvent Refining Impurities
WOS标题词	Science & Technology ; Physical Sciences ; Technology
DOI	10.1007/s12633-014-9269-0
关键词[WOS]	AL-SI ; SOLAR-CELL ; PURIFICATION ; SOLIDIFICATION ; GROWTH ; COPPER ; IRON
收录类别	SCI
语种	英语
项目资助者	National Natural Science Foundation of China(51404231 ; National Natural Science Foundation of China(51404231 ; National Natural Science Foundation of China(51404231 ; National Natural Science Foundation of China(51404231 ; National Natural Science Foundation of China(51404231 ; National Natural Science Foundation of China(51404231 ; National Natural Science Foundation of China(51404231 ; National Natural Science Foundation of China(51404231 ; Anhui Provincial Natural Science Foundation(1508085QE81) ; Anhui Provincial Natural Science Foundation(1508085QE81) ; Anhui Provincial Natural Science Foundation(1508085QE81) ; Anhui Provincial Natural Science Foundation(1508085QE81) ; Anhui Provincial Natural Science Foundation(1508085QE81) ; Anhui Provincial Natural Science Foundation(1508085QE81) ; Anhui Provincial Natural Science Foundation(1508085QE81) ; Anhui Provincial Natural Science Foundation(1508085QE81) ; China Postdoctoral Science Foundation(2014M561846) ; China Postdoctoral Science Foundation(2014M561846) ; China Postdoctoral Science Foundation(2014M561846) ; China Postdoctoral Science Foundation(2014M561846) ; China Postdoctoral Science Foundation(2014M561846) ; China Postdoctoral Science Foundation(2014M561846) ; China Postdoctoral Science Foundation(2014M561846) ; China Postdoctoral Science Foundation(2014M561846) ; 100 Talent Program of Chinese Academy of Sciences ; 100 Talent Program of Chinese Academy of Sciences ; 100 Talent Program of Chinese Academy of Sciences ; 100 Talent Program of Chinese Academy of Sciences ; 100 Talent Program of Chinese Academy of Sciences ; 100 Talent Program of Chinese Academy of Sciences ; 100 Talent Program of Chinese Academy of Sciences ; 100 Talent Program of Chinese Academy of Sciences ; Science Fund of Institute of Plasma Physics, Chinese Academy of Sciences(095YZ31222 ; Science Fund of Institute of Plasma Physics, Chinese Academy of Sciences(095YZ31222 ; Science Fund of Institute of Plasma Physics, Chinese Academy of Sciences(095YZ31222 ; Science Fund of Institute of Plasma Physics, Chinese Academy of Sciences(095YZ31222 ; Science Fund of Institute of Plasma Physics, Chinese Academy of Sciences(095YZ31222 ; Science Fund of Institute of Plasma Physics, Chinese Academy of Sciences(095YZ31222 ; Science Fund of Institute of Plasma Physics, Chinese Academy of Sciences(095YZ31222 ; Science Fund of Institute of Plasma Physics, Chinese Academy of Sciences(095YZ31222 ; 51474201) ; 51474201) ; 51474201) ; 51474201) ; 51474201) ; 51474201) ; 51474201) ; 51474201) ; Y35QT10894) ; Y35QT10894) ; Y35QT10894) ; Y35QT10894) ; Y35QT10894) ; Y35QT10894) ; Y35QT10894) ; Y35QT10894)
WOS研究方向	Chemistry ; Materials Science
WOS类目	Chemistry, Physical ; Materials Science, Multidisciplinary
WOS记录号	WOS:000383859900011
引用统计	被引频次：29[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.hfcas.ac.cn:8080/handle/334002/24728
专题	中科院等离子体物理研究所
作者单位	1.Chinese Acad Sci, Inst Plasma Phys, Key Lab Novel Thin Film Solar Cells, Hefei 230031, Peoples R China 2.China Univ Geosci, Sch Engn & Technol, Beijing 100083, Peoples R China
第一作者单位	中科院等离子体物理研究所
推荐引用方式 GB/T 7714	Li, Jingwei,Ban, Boyuan,Li, Yanlei,et al. Removal of Impurities from Metallurgical Grade Silicon During Ga-Si Solvent Refining[J]. SILICON,2017,9(1):77-83.
APA	Li, Jingwei,Ban, Boyuan,Li, Yanlei,Bai, Xiaolong,Zhang, Taotao,&Chen, Jian.(2017).Removal of Impurities from Metallurgical Grade Silicon During Ga-Si Solvent Refining.SILICON,9(1),77-83.
MLA	Li, Jingwei,et al."Removal of Impurities from Metallurgical Grade Silicon During Ga-Si Solvent Refining".SILICON 9.1(2017):77-83.

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