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Semiconductor Sensitized Solar Cells Based on BiVO4-Sensitized Mesoporous SnO2 Photoanodes
Li, Yi1,2; Zhu, Jun2; Chen, Shuanghong2; Liu, Feng2; Lv, Mei2; Wei, Junfeng2; Huang, Yang2; Huo, Zhipeng2; Hu, Linhua2; Tang, Junwang3; Dai, Songyuan2,4
2016-06-01
Source PublicationJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume16Issue:6Pages:5719-5723
AbstractLow cost, stable and visible-light-responsive bismuth vanadate (BiVO4) was used as the light absorbing material to fabricate a low bandgap oxide solar cell on mesoporous SnO2 photoanode. BiVO4 nanoparticles were grown on the mesoporous SnO2 films employing successive ionic layer adsorption and reaction process. The optimized BiVO4 solar cell shows an incident photon to current conversion efficiency of more than 60% at a wide range of visible region (350 nm-450 nm), leading to a power conversion efficiency of 0.56% at AM1.5, 100 mW . cm(-2). This result provides important insights into the low cost and robust oxide solar cells.
SubtypeArticle
KeywordSolar Cells Semiconductor Bivo4 Sensitizer
WOS HeadingsScience & Technology ; Physical Sciences ; Technology
Funding OrganizationNational Basic Research Program of China(2011CBA00700) ; National Basic Research Program of China(2011CBA00700) ; National Basic Research Program of China(2011CBA00700) ; National Basic Research Program of China(2011CBA00700) ; National High Technology Research and Development Program of China(2011AA050527) ; National High Technology Research and Development Program of China(2011AA050527) ; National High Technology Research and Development Program of China(2011AA050527) ; National High Technology Research and Development Program of China(2011AA050527) ; National Natural Science Foundation of China(21403247 ; National Natural Science Foundation of China(21403247 ; National Natural Science Foundation of China(21403247 ; National Natural Science Foundation of China(21403247 ; 21173228 ; 21173228 ; 21173228 ; 21173228 ; 21103197 ; 21103197 ; 21103197 ; 21103197 ; 61204075 ; 61204075 ; 61204075 ; 61204075 ; 61404142) ; 61404142) ; 61404142) ; 61404142) ; National Basic Research Program of China(2011CBA00700) ; National Basic Research Program of China(2011CBA00700) ; National Basic Research Program of China(2011CBA00700) ; National Basic Research Program of China(2011CBA00700) ; National High Technology Research and Development Program of China(2011AA050527) ; National High Technology Research and Development Program of China(2011AA050527) ; National High Technology Research and Development Program of China(2011AA050527) ; National High Technology Research and Development Program of China(2011AA050527) ; National Natural Science Foundation of China(21403247 ; National Natural Science Foundation of China(21403247 ; National Natural Science Foundation of China(21403247 ; National Natural Science Foundation of China(21403247 ; 21173228 ; 21173228 ; 21173228 ; 21173228 ; 21103197 ; 21103197 ; 21103197 ; 21103197 ; 61204075 ; 61204075 ; 61204075 ; 61204075 ; 61404142) ; 61404142) ; 61404142) ; 61404142)
DOI10.1166/jnn.2016.12062
WOS KeywordBIVO4 ; DYE ; CRYSTAL ; FILMS ; OXIDE
Indexed BySCI
Language英语
Funding OrganizationNational Basic Research Program of China(2011CBA00700) ; National Basic Research Program of China(2011CBA00700) ; National Basic Research Program of China(2011CBA00700) ; National Basic Research Program of China(2011CBA00700) ; National High Technology Research and Development Program of China(2011AA050527) ; National High Technology Research and Development Program of China(2011AA050527) ; National High Technology Research and Development Program of China(2011AA050527) ; National High Technology Research and Development Program of China(2011AA050527) ; National Natural Science Foundation of China(21403247 ; National Natural Science Foundation of China(21403247 ; National Natural Science Foundation of China(21403247 ; National Natural Science Foundation of China(21403247 ; 21173228 ; 21173228 ; 21173228 ; 21173228 ; 21103197 ; 21103197 ; 21103197 ; 21103197 ; 61204075 ; 61204075 ; 61204075 ; 61204075 ; 61404142) ; 61404142) ; 61404142) ; 61404142) ; National Basic Research Program of China(2011CBA00700) ; National Basic Research Program of China(2011CBA00700) ; National Basic Research Program of China(2011CBA00700) ; National Basic Research Program of China(2011CBA00700) ; National High Technology Research and Development Program of China(2011AA050527) ; National High Technology Research and Development Program of China(2011AA050527) ; National High Technology Research and Development Program of China(2011AA050527) ; National High Technology Research and Development Program of China(2011AA050527) ; National Natural Science Foundation of China(21403247 ; National Natural Science Foundation of China(21403247 ; National Natural Science Foundation of China(21403247 ; National Natural Science Foundation of China(21403247 ; 21173228 ; 21173228 ; 21173228 ; 21173228 ; 21103197 ; 21103197 ; 21103197 ; 21103197 ; 61204075 ; 61204075 ; 61204075 ; 61204075 ; 61404142) ; 61404142) ; 61404142) ; 61404142)
WOS Research AreaChemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS SubjectChemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS IDWOS:000386123900041
Citation statistics
Document Type期刊论文
Identifierhttp://ir.hfcas.ac.cn:8080/handle/334002/30156
Collection应用技术研究所
Affiliation1.Univ Sci & Technol China, Hefei 230026, Peoples R China
2.Chinese Acad Sci, Hefei Inst Phys Sci, Inst Appl Technol, Key Lab Novel Thin Film Solar Cells, Hefei 230031, Peoples R China
3.UCL, Dept Chem Engn, London WC1E 7JE, England
4.North China Elect Power Univ, State Key Lab Alternate Elect Power Syst Renewabl, Beijing 102206, Peoples R China
Recommended Citation
GB/T 7714
Li, Yi,Zhu, Jun,Chen, Shuanghong,et al. Semiconductor Sensitized Solar Cells Based on BiVO4-Sensitized Mesoporous SnO2 Photoanodes[J]. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,2016,16(6):5719-5723.
APA Li, Yi.,Zhu, Jun.,Chen, Shuanghong.,Liu, Feng.,Lv, Mei.,...&Dai, Songyuan.(2016).Semiconductor Sensitized Solar Cells Based on BiVO4-Sensitized Mesoporous SnO2 Photoanodes.JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,16(6),5719-5723.
MLA Li, Yi,et al."Semiconductor Sensitized Solar Cells Based on BiVO4-Sensitized Mesoporous SnO2 Photoanodes".JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 16.6(2016):5719-5723.
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