Temperature-dependent electrical transport mechanism in amorphous Ge2Sb2Te5 films

doi:10.1002/pssb.201600045

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	Temperature-dependent electrical transport mechanism in amorphous Ge2Sb2Te5 films
	Wu, H. Y.1; Wang, W.2 ; Lu, W. J.2
	2016-09-01
发表期刊	PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
摘要	We study the electrical transport mechanism of amorphous Ge2Sb2Te5 (GST) phase-change memory material. Amorphous GST films with 10-100 nm thicknesses were fabricated in tri-layer geometry by using metal top and bottom electrodes. The temperature and voltage bias dependences of the electrical conductance were measured and analyzed using different models. Thermally activated conductance was observed at high temperatures. The estimated activation energy E-a and carrier density n were 0.36-0.45 eV and similar to 10(18) cm(-3), respectively. With a de-crease in temperature, variable-range-hopping (VRH) conductivity was induced in moderate temperature range (150-250 K), which was associated with the diffusive regime. At low temperatures (T < 50 K), electrical transport occurred predominantly by inelastic hopping through directed chains of localized states. The localized electronic states of amorphous GST were observed experimentally by our tunneling density-of-states (DOS) measurements. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
文章类型	Article
关键词	Amorphous Ge2sb2te5 Electrical Transport Phase Change Memories Variable Range Hopping
WOS标题词	Science & Technology ; Physical Sciences
DOI	10.1002/pssb.201600045
关键词[WOS]	PHASE-CHANGE MEMORIES ; THIN-FILMS ; RESISTANCE MEASUREMENTS ; ELECTRONIC-PROPERTIES ; CONDUCTION ; GLASSES ; MEDIA ; FIELD
收录类别	SCI
语种	英语
项目资助者	Doctoral Startup Foundation of Anhui University(33190076) ; Doctoral Startup Foundation of Anhui University(33190076) ; Doctoral Startup Foundation of Anhui University(33190076) ; Doctoral Startup Foundation of Anhui University(33190076)
WOS研究方向	Physics
WOS类目	Physics, Condensed Matter
WOS记录号	WOS:000383605400023
引用统计	被引频次：3[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.hfcas.ac.cn:8080/handle/334002/30162
专题	中科院固体物理研究所
作者单位	1.Anhui Univ, Modern Expt Technol Ctr, Hefei 230039, Peoples R China 2.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
推荐引用方式 GB/T 7714	Wu, H. Y.,Wang, W.,Lu, W. J.. Temperature-dependent electrical transport mechanism in amorphous Ge2Sb2Te5 films[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS,2016,253(9):1855-1860.
APA	Wu, H. Y.,Wang, W.,&Lu, W. J..(2016).Temperature-dependent electrical transport mechanism in amorphous Ge2Sb2Te5 films.PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS,253(9),1855-1860.
MLA	Wu, H. Y.,et al."Temperature-dependent electrical transport mechanism in amorphous Ge2Sb2Te5 films".PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 253.9(2016):1855-1860.

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