Institutional Repository of Chinese Acad Sci, Inst Solid State Phys, Hefei 230031, Anhui, Peoples R China
Strain-controlled switch between ferromagnetism and antiferromagnetism in 1T-CrX2 (X = Se, Te) monolayers | |
Lv, H. Y.1; Lu, W. J.1; Shao, D. F.1; Liu, Y.1; Sun, Y. P.1,2,3 | |
2015-12-14 | |
发表期刊 | PHYSICAL REVIEW B |
摘要 | We report on the strain-induced switch between ferromagnetic (FM) and antiferromagnetic (AFM) orderings in 1T-CrX2 (X = Se, Te) monolayers based on first-principles calculations. The CrSe2 and CrTe2 monolayers without strains are found to be AFM and FM, respectively. Under biaxial tensile strain, the CrSe2 monolayer tends to be FM when the strain is larger than 2%. The FM state is further stabilized when the strain is increased. Moreover, the CrSe2 monolayer becomes half metallic when the tensile strain is larger than 10%, while for the CrTe2 monolayer, the critical strain at which the transition between the FM and AFM states occurs is compressive, of -1%. Relatively small tensile strains of 4% and 2%, respectively, can enhance the Curie temperature of the CrSe2 and CrTe2 monolayers above room temperature. The strain-induced switch between the FM and AFM states in a CrSe2 (CrTe2) monolayer can be understood by the competition between the AFM Cr-Cr direct exchange interaction and the FM Cr-Se(Te)-Cr superexchange interaction. Tunable and attractive magnetic and electronic properties controlled by flexible strain are desirable for future nanoelectronic applications. |
文章类型 | Article |
WOS标题词 | Science & Technology ; Physical Sciences |
DOI | 10.1103/PhysRevB.92.214419 |
关键词[WOS] | FIELD-EFFECT TRANSISTORS ; ELECTRONIC-STRUCTURE ; MAGNETIC-PROPERTIES ; GATE DIELECTRICS ; EXFOLIATION ; NANOSHEETS ; MOS2 |
收录类别 | SCI |
语种 | 英语 |
项目资助者 | National Key Basic Research(2011CBA00111) ; National Key Basic Research(2011CBA00111) ; National Key Basic Research(2011CBA00111) ; National Key Basic Research(2011CBA00111) ; National Key Basic Research(2011CBA00111) ; National Key Basic Research(2011CBA00111) ; National Key Basic Research(2011CBA00111) ; National Key Basic Research(2011CBA00111) ; National Natural Science Foundation of China(11274311 ; National Natural Science Foundation of China(11274311 ; National Natural Science Foundation of China(11274311 ; National Natural Science Foundation of China(11274311 ; National Natural Science Foundation of China(11274311 ; National Natural Science Foundation of China(11274311 ; National Natural Science Foundation of China(11274311 ; National Natural Science Foundation of China(11274311 ; Anhui Provincial Natural Science Foundation(1408085MA11) ; Anhui Provincial Natural Science Foundation(1408085MA11) ; Anhui Provincial Natural Science Foundation(1408085MA11) ; Anhui Provincial Natural Science Foundation(1408085MA11) ; Anhui Provincial Natural Science Foundation(1408085MA11) ; Anhui Provincial Natural Science Foundation(1408085MA11) ; Anhui Provincial Natural Science Foundation(1408085MA11) ; Anhui Provincial Natural Science Foundation(1408085MA11) ; China Postdoctoral Science Foundation(2014M550352) ; China Postdoctoral Science Foundation(2014M550352) ; China Postdoctoral Science Foundation(2014M550352) ; China Postdoctoral Science Foundation(2014M550352) ; China Postdoctoral Science Foundation(2014M550352) ; China Postdoctoral Science Foundation(2014M550352) ; China Postdoctoral Science Foundation(2014M550352) ; China Postdoctoral Science Foundation(2014M550352) ; Special Financial Grant from the China Postdoctoral Science Foundation(2015T80670) ; Special Financial Grant from the China Postdoctoral Science Foundation(2015T80670) ; Special Financial Grant from the China Postdoctoral Science Foundation(2015T80670) ; Special Financial Grant from the China Postdoctoral Science Foundation(2015T80670) ; Special Financial Grant from the China Postdoctoral Science Foundation(2015T80670) ; Special Financial Grant from the China Postdoctoral Science Foundation(2015T80670) ; Special Financial Grant from the China Postdoctoral Science Foundation(2015T80670) ; Special Financial Grant from the China Postdoctoral Science Foundation(2015T80670) ; 11404340 ; 11404340 ; 11404340 ; 11404340 ; 11404340 ; 11404340 ; 11404340 ; 11404340 ; U1232139) ; U1232139) ; U1232139) ; U1232139) ; U1232139) ; U1232139) ; U1232139) ; U1232139) |
WOS研究方向 | Physics |
WOS类目 | Physics, Condensed Matter |
WOS记录号 | WOS:000366499100004 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.hfcas.ac.cn:8080/handle/334002/30198 |
专题 | 中科院固体物理研究所 |
作者单位 | 1.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China 2.Chinese Acad Sci, High Field Magnet Lab, Hefei 230031, Peoples R China 3.Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China |
推荐引用方式 GB/T 7714 | Lv, H. Y.,Lu, W. J.,Shao, D. F.,et al. Strain-controlled switch between ferromagnetism and antiferromagnetism in 1T-CrX2 (X = Se, Te) monolayers[J]. PHYSICAL REVIEW B,2015,92(21):1-8. |
APA | Lv, H. Y.,Lu, W. J.,Shao, D. F.,Liu, Y.,&Sun, Y. P..(2015).Strain-controlled switch between ferromagnetism and antiferromagnetism in 1T-CrX2 (X = Se, Te) monolayers.PHYSICAL REVIEW B,92(21),1-8. |
MLA | Lv, H. Y.,et al."Strain-controlled switch between ferromagnetism and antiferromagnetism in 1T-CrX2 (X = Se, Te) monolayers".PHYSICAL REVIEW B 92.21(2015):1-8. |
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