Institutional Repository of Chinese Acad Sci, High Field Magnet Lab,Hefei 230031, Anhui, Peoples R China
| Electric-Field-Driven Dual Vacancies Evolution in Ultrathin Nanosheets Realizing Reversible Semiconductor to Half-Metal Transition | |
Lyu, Mengjie1; Liu, Youwen1; Zhi, Yuduo1; Xiao, Chong1; Gu, Bingchuan2; Hua, Xuemin1; Fan, Shaojuan2; Lin, Yue1; Bai, Wei1; Tong, Wei3 ; Zou, Youming3; Pan, Bicai1; Ye, Bangjiao2; Xie, Yi1
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| 2015-12-02 | |
| 发表期刊 | JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
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| 摘要 | Fabricating a flexible room-temperature ferromagnetic resistive-switching random access memory (REAM) device is of fundamental importance to integrate nonvolatile memory and spintronics both in theory and practice for modern information technology and has the potential to bring about revolutionary new foldable information-storage devices. Here, we show that a relatively low operating voltage (+1.4 V/1.5 V, the corresponding electric field is around 20 000 V/cm) drives the dual vacancies evolution in ultrathin SnO2 nanosheets at room temperature, which causes the reversible transition between semiconductor and half-metal, accompanyied by an abrupt conductivity change up to 103 times, exhibiting room-temperature ferromagnetism in two resistance states. Positron annihilation spectroscopy and electron spin resonance results show that the Sn/O dual vacancies in the ultrathin SnO2 nanosheets evolve to isolated Sn vacancy under electric field, accounting for the switching behavior of SnO2 ultrathin nanosheets; on the other hand, the different defect types correspond to different conduction natures, realizing the transition between semiconductor and half-metal. Our result represents a crucial step to create new a information-storage device realizing the reversible transition between semiconductor and half-metal with flexibility and room-temperature ferromagnetism at low energy consumption. The as-obtained half-metal in the low-resistance state broadens the application of the device in spintronics and the semiconductor to half-metal transition on the basis of defects evolution and also opens up a new avenue for exploring random access memory mechanisms and finding new half-metals for spintronics. |
| 文章类型 | Article |
| WOS标题词 | Science & Technology ; Physical Sciences |
| DOI | 10.1021/jacs.5b10212 |
| 关键词[WOS] | MEMORY DEVICES ; GRAPHENE ; SPINTRONICS ; OPPORTUNITIES ; ELECTRONICS ; FABRICATION ; SWITCHES ; FUTURE ; SNO2 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 项目资助者 | National Basic Research Program of China(2015CB932302) ; National Basic Research Program of China(2015CB932302) ; National Basic Research Program of China(2015CB932302) ; National Basic Research Program of China(2015CB932302) ; National Basic Research Program of China(2015CB932302) ; National Basic Research Program of China(2015CB932302) ; National Basic Research Program of China(2015CB932302) ; National Basic Research Program of China(2015CB932302) ; National Natural Science Foundation of China(21401182 ; National Natural Science Foundation of China(21401182 ; National Natural Science Foundation of China(21401182 ; National Natural Science Foundation of China(21401182 ; National Natural Science Foundation of China(21401182 ; National Natural Science Foundation of China(21401182 ; National Natural Science Foundation of China(21401182 ; National Natural Science Foundation of China(21401182 ; Key Laboratory of Neutron Physics(CAEP 2014DB02) ; Key Laboratory of Neutron Physics(CAEP 2014DB02) ; Key Laboratory of Neutron Physics(CAEP 2014DB02) ; Key Laboratory of Neutron Physics(CAEP 2014DB02) ; Key Laboratory of Neutron Physics(CAEP 2014DB02) ; Key Laboratory of Neutron Physics(CAEP 2014DB02) ; Key Laboratory of Neutron Physics(CAEP 2014DB02) ; Key Laboratory of Neutron Physics(CAEP 2014DB02) ; Fundamental Research Funds for the Central University(WK2340000063 ; Fundamental Research Funds for the Central University(WK2340000063 ; Fundamental Research Funds for the Central University(WK2340000063 ; Fundamental Research Funds for the Central University(WK2340000063 ; Fundamental Research Funds for the Central University(WK2340000063 ; Fundamental Research Funds for the Central University(WK2340000063 ; Fundamental Research Funds for the Central University(WK2340000063 ; Fundamental Research Funds for the Central University(WK2340000063 ; 21331005 ; 21331005 ; 21331005 ; 21331005 ; 21331005 ; 21331005 ; 21331005 ; 21331005 ; WK 2060190027) ; WK 2060190027) ; WK 2060190027) ; WK 2060190027) ; WK 2060190027) ; WK 2060190027) ; WK 2060190027) ; WK 2060190027) ; 91422303) ; 91422303) ; 91422303) ; 91422303) ; 91422303) ; 91422303) ; 91422303) ; 91422303) |
| WOS研究方向 | Chemistry |
| WOS类目 | Chemistry, Multidisciplinary |
| WOS记录号 | WOS:000365930600030 |
| 引用统计 | |
| 文献类型 | 期刊论文 |
| 条目标识符 | http://ir.hfcas.ac.cn:8080/handle/334002/30230 |
| 专题 | 中科院强磁场科学中心 |
| 作者单位 | 1.Univ Sci & Technol China, Collaborat Innovat Ctr Chem Energy Mat, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China 2.Univ Sci & Technol China, State Key Lab Particle Detect & Elect, Hefei 230026, Anhui, Peoples R China 3.Chinese Acad Sci, High Field Magnet Lab, Hefei 230031, Anhui, Peoples R China |
| 推荐引用方式 GB/T 7714 | Lyu, Mengjie,Liu, Youwen,Zhi, Yuduo,et al. Electric-Field-Driven Dual Vacancies Evolution in Ultrathin Nanosheets Realizing Reversible Semiconductor to Half-Metal Transition[J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,2015,137(47):15043-15048. |
| APA | Lyu, Mengjie.,Liu, Youwen.,Zhi, Yuduo.,Xiao, Chong.,Gu, Bingchuan.,...&Xie, Yi.(2015).Electric-Field-Driven Dual Vacancies Evolution in Ultrathin Nanosheets Realizing Reversible Semiconductor to Half-Metal Transition.JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,137(47),15043-15048. |
| MLA | Lyu, Mengjie,et al."Electric-Field-Driven Dual Vacancies Evolution in Ultrathin Nanosheets Realizing Reversible Semiconductor to Half-Metal Transition".JOURNAL OF THE AMERICAN CHEMICAL SOCIETY 137.47(2015):15043-15048. |
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