Effect of Ga Addition on Morphology and Recovery of Primary Si During Al-Si Alloy Solidification Refining

doi:10.1515/htmp-2014-0130

	Effect of Ga Addition on Morphology and Recovery of Primary Si During Al-Si Alloy Solidification Refining
	Li, Jingwei; Bai, Xiaolong; Li, Yanlei; Ban, Boyuan; Chen, Jian
	2015-12-01
发表期刊	HIGH TEMPERATURE MATERIALS AND PROCESSES
摘要	The effect of Ga addition on alloy macrostructure, morphology and recovery rate of primary Si during the Al-Si-Ga alloy solvent refining process of silicon was studied in this work. The addition of Ga to Al-Si alloy could change the morphology of the primary Si. The average plate thickness of the primary Si increases with increase of Ga content. With the increase of Ga content, the average plate length of the primary Si crystals becomes larger when the Ga content is less than 5% in the Al-30% Si-xGa alloy, but becomes smaller when the Ga content exceeds 5%. Al-Si-Ga alloys consist of three types, primary Si, GaxAl1-x, (alpha-Al + Si + beta-Ga) eutectic. (111) is the preferred growth surface of the plate-like primary Si. The recovery rate of the primary Si increases with the increase of Ga content. When the Ga content increased to 20% in Al-30% Si-xGa alloy, the relative recovery rate of the primary Si increased to 50.41% than that in Al-30% Si alloy.
文章类型	Article
关键词	Al-si-ga Alloy Gallium Addition Size Distribution Primary Si Recovery Rate
WOS标题词	Science & Technology ; Technology
DOI	10.1515/htmp-2014-0130
关键词[WOS]	SILICON ; MELT ; PURIFICATION
收录类别	SCI
语种	英语
项目资助者	National Natural Science Foundation of China(51404231 ; National Natural Science Foundation of China(51404231 ; National Natural Science Foundation of China(51404231 ; National Natural Science Foundation of China(51404231 ; National Natural Science Foundation of China(51404231 ; National Natural Science Foundation of China(51404231 ; National Natural Science Foundation of China(51404231 ; National Natural Science Foundation of China(51404231 ; Anhui Provincial Natural Science Foundation(1508085QE81) ; Anhui Provincial Natural Science Foundation(1508085QE81) ; Anhui Provincial Natural Science Foundation(1508085QE81) ; Anhui Provincial Natural Science Foundation(1508085QE81) ; Anhui Provincial Natural Science Foundation(1508085QE81) ; Anhui Provincial Natural Science Foundation(1508085QE81) ; Anhui Provincial Natural Science Foundation(1508085QE81) ; Anhui Provincial Natural Science Foundation(1508085QE81) ; China Postdoctoral Science Foundation(2014M561846) ; China Postdoctoral Science Foundation(2014M561846) ; China Postdoctoral Science Foundation(2014M561846) ; China Postdoctoral Science Foundation(2014M561846) ; China Postdoctoral Science Foundation(2014M561846) ; China Postdoctoral Science Foundation(2014M561846) ; China Postdoctoral Science Foundation(2014M561846) ; China Postdoctoral Science Foundation(2014M561846) ; 100 Talent Program of Chinese Academy of Sciences ; 100 Talent Program of Chinese Academy of Sciences ; 100 Talent Program of Chinese Academy of Sciences ; 100 Talent Program of Chinese Academy of Sciences ; 100 Talent Program of Chinese Academy of Sciences ; 100 Talent Program of Chinese Academy of Sciences ; 100 Talent Program of Chinese Academy of Sciences ; 100 Talent Program of Chinese Academy of Sciences ; Science Fund of Institute of Plasma Physics, Chinese Academy of Sciences(095YZ31222 ; Science Fund of Institute of Plasma Physics, Chinese Academy of Sciences(095YZ31222 ; Science Fund of Institute of Plasma Physics, Chinese Academy of Sciences(095YZ31222 ; Science Fund of Institute of Plasma Physics, Chinese Academy of Sciences(095YZ31222 ; Science Fund of Institute of Plasma Physics, Chinese Academy of Sciences(095YZ31222 ; Science Fund of Institute of Plasma Physics, Chinese Academy of Sciences(095YZ31222 ; Science Fund of Institute of Plasma Physics, Chinese Academy of Sciences(095YZ31222 ; Science Fund of Institute of Plasma Physics, Chinese Academy of Sciences(095YZ31222 ; 51474201) ; 51474201) ; 51474201) ; 51474201) ; 51474201) ; 51474201) ; 51474201) ; 51474201) ; Y35QT10894) ; Y35QT10894) ; Y35QT10894) ; Y35QT10894) ; Y35QT10894) ; Y35QT10894) ; Y35QT10894) ; Y35QT10894)
WOS研究方向	Materials Science
WOS类目	Materials Science, Multidisciplinary
WOS记录号	WOS:000365345700012
引用统计	被引频次：3[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.hfcas.ac.cn:8080/handle/334002/30232
专题	中科院等离子体物理研究所
作者单位	Chinese Acad Sci, Inst Plasma Phys, Key Lab Novel Thin Film Solar Cells, Hefei 230031, Peoples R China
第一作者单位	中科院等离子体物理研究所
推荐引用方式 GB/T 7714	Li, Jingwei,Bai, Xiaolong,Li, Yanlei,et al. Effect of Ga Addition on Morphology and Recovery of Primary Si During Al-Si Alloy Solidification Refining[J]. HIGH TEMPERATURE MATERIALS AND PROCESSES,2015,34(8):833-838.
APA	Li, Jingwei,Bai, Xiaolong,Li, Yanlei,Ban, Boyuan,&Chen, Jian.(2015).Effect of Ga Addition on Morphology and Recovery of Primary Si During Al-Si Alloy Solidification Refining.HIGH TEMPERATURE MATERIALS AND PROCESSES,34(8),833-838.
MLA	Li, Jingwei,et al."Effect of Ga Addition on Morphology and Recovery of Primary Si During Al-Si Alloy Solidification Refining".HIGH TEMPERATURE MATERIALS AND PROCESSES 34.8(2015):833-838.

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