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	Unipolar resistive switching characteristics and scaling behaviors in La2Mo2O9 thin films for nonvolatile memory applications
	Hu, L.1; Lin, G. T.1; Luo, X.1; Wei, R. H.1; Zhu, X. B.1; Song, W. H.1; Dai, J. M.1; Sun, Y. P.1,2,3
	2016-12-07
发表期刊	JOURNAL OF APPLIED PHYSICS
摘要	La2Mo2O9 (LMO) thin films have been deposited on Pt/Ti/SiO2/Si substrates by pulsed laser deposition and the resistive switching (RS) characteristics of the Au/LMO/Pt devices has been investigated. The Au/LMO/Pt devices show excellent unipolar RS characteristics with high resistance ratio between high resistance state and low resistance state (LRS), good endurance, and retention performances. The results of temperature dependence of resistance and x-ray photoelectron spectroscopy suggest that the observed RS characteristics can be explained by the formation and rupture of conducting filaments composed of oxygen vacancies. Furthermore, the plot of the reset current (I-R) as a function of the third harmonic coefficient (B-0) caused by Joule heating during the reset process shows scaling behavior with a power law of I-R proportional to B-0(-delta). The I-R and reset power (P-R) can also be scaled to the resistance in LRS (R-0), i.e., I-R(P-R) proportional to R-0(-alpha(beta)). The observed scaling behaviors indicate the importance of the Joule heating for the RS characteristics of Au/LMO/Pt devices. These results demonstrate the potential application of LMO thin film in a nonvolatile memory device. Published by AIP Publishing.
文章类型	Article
WOS标题词	Science & Technology ; Physical Sciences
DOI	10.1063/1.4971762
关键词[WOS]	OXIDE-ION CONDUCTORS ; CRYSTAL-STRUCTURE ; CONDUCTIVITY ; DEVICE
收录类别	SCI
语种	英语
项目资助者	National Natural Science Foundation of China(U1532149) ; National Natural Science Foundation of China(U1532149) ; National Natural Science Foundation of China(U1532149) ; National Natural Science Foundation of China(U1532149) ; National Natural Science Foundation of China(U1532149) ; National Natural Science Foundation of China(U1532149) ; National Natural Science Foundation of China(U1532149) ; National Natural Science Foundation of China(U1532149) ; Chinese Academy of Sciences' Large-Scale Scientific Facility(U1532149) ; Chinese Academy of Sciences' Large-Scale Scientific Facility(U1532149) ; Chinese Academy of Sciences' Large-Scale Scientific Facility(U1532149) ; Chinese Academy of Sciences' Large-Scale Scientific Facility(U1532149) ; Chinese Academy of Sciences' Large-Scale Scientific Facility(U1532149) ; Chinese Academy of Sciences' Large-Scale Scientific Facility(U1532149) ; Chinese Academy of Sciences' Large-Scale Scientific Facility(U1532149) ; Chinese Academy of Sciences' Large-Scale Scientific Facility(U1532149) ; National Basic Research Program of China(2014CB931704) ; National Basic Research Program of China(2014CB931704) ; National Basic Research Program of China(2014CB931704) ; National Basic Research Program of China(2014CB931704) ; National Basic Research Program of China(2014CB931704) ; National Basic Research Program of China(2014CB931704) ; National Basic Research Program of China(2014CB931704) ; National Basic Research Program of China(2014CB931704)
WOS研究方向	Physics
WOS类目	Physics, Applied
WOS记录号	WOS:000390602600033
引用统计	被引频次：9[WOS]   [WOS记录]     [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.hfcas.ac.cn:8080/handle/334002/30262
专题	中科院固体物理研究所
作者单位	1.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China 2.Chinese Acad Sci, High Field Magnet Lab, Hefei 230031, Peoples R China 3.Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China
推荐引用方式 GB/T 7714	Hu, L.,Lin, G. T.,Luo, X.,et al. Unipolar resistive switching characteristics and scaling behaviors in La2Mo2O9 thin films for nonvolatile memory applications[J]. JOURNAL OF APPLIED PHYSICS,2016,120(21):1-6.
APA	Hu, L..,Lin, G. T..,Luo, X..,Wei, R. H..,Zhu, X. B..,...&Sun, Y. P..(2016).Unipolar resistive switching characteristics and scaling behaviors in La2Mo2O9 thin films for nonvolatile memory applications.JOURNAL OF APPLIED PHYSICS,120(21),1-6.
MLA	Hu, L.,et al."Unipolar resistive switching characteristics and scaling behaviors in La2Mo2O9 thin films for nonvolatile memory applications".JOURNAL OF APPLIED PHYSICS 120.21(2016):1-6.

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