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Interface chemistry and electronic structure of ALD-derived HfAlO/Ge gate stacks revealed by X-ray photoelectron spectroscopy
He, Gang1; Jiang, Shanshan1; Li, Wendong1; Zheng, Changyong1; He, Huaxin1; Li, Jing1; Sun, Zhaoqi1; Liu, Yanmei1; Liu, Mao2
2017-09-05
Source PublicationJOURNAL OF ALLOYS AND COMPOUNDS
Volume716Issue:Pages:1-6
AbstractIn this article, the effect of annealing temperature on the electronic structure and interface chemistry of HfAlO/Ge gate stack grown by atomic layer deposition (ALD) have been investigated systematically. Based on characterization from x-ray photoelectron spectroscopy (XPS), the evolution of electronic structure and interface chemistry of HfAlO/Ge gate stacks as functions of annealing temperature been detected. With increasing the annealing temperature from 500 to 600 degrees C, crystallization of HfAlO gate dielectrics has been observed. Annealing the samples on 700 degrees C leads to the reduction of HfAlO component and the formation of Al2O3, which brings about the improved interface stability. The optimized interface chemistry related to annealing temperature indicates the potential application for HfAlO gate dielectrics in future Ge-based microelectronic device. (C) 2017 Elsevier B.V. All rights reserved.
SubtypeArticle
KeywordHigh-k Gate Dielectric Atomic-layer-deposition Interface Stability Phase Separation Annealing Temperature
WOS HeadingsScience & Technology ; Physical Sciences ; Technology
Funding OrganizationNational Natural Science Foundation of China(51572002 ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Key projects of domestic and foreign research and training of outstanding young and middle aged backbone talents in Universities in Anhui Province(gxfxZD2016133) ; 11474284) ; National Natural Science Foundation of China(51572002 ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Key projects of domestic and foreign research and training of outstanding young and middle aged backbone talents in Universities in Anhui Province(gxfxZD2016133) ; 11474284)
DOI10.1016/j.jallcom.2017.05.018
WOS KeywordATOMIC-LAYER-DEPOSITION ; DIELECTRICS ; AL2O3 ; HFO2
Indexed BySCI
Language英语
Funding OrganizationNational Natural Science Foundation of China(51572002 ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Key projects of domestic and foreign research and training of outstanding young and middle aged backbone talents in Universities in Anhui Province(gxfxZD2016133) ; 11474284) ; National Natural Science Foundation of China(51572002 ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Key projects of domestic and foreign research and training of outstanding young and middle aged backbone talents in Universities in Anhui Province(gxfxZD2016133) ; 11474284)
WOS Research AreaChemistry ; Materials Science ; Metallurgy & Metallurgical Engineering
WOS SubjectChemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS IDWOS:000402924500001
Citation statistics
Cited Times:2[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.hfcas.ac.cn:8080/handle/334002/31889
Collection中科院固体物理研究所
Affiliation1.Anhui Univ, Sch Phys & Mat Sci, Radiat Detect Mat & Devices Lab, Hefei 230601, Peoples R China
2.Chinese Acad Sci, Key Lab Mat Phys, Anhui Key Lab Nanomat & Nanostruct, Inst Solid State Phys, Hefei 230031, Peoples R China
Recommended Citation
GB/T 7714
He, Gang,Jiang, Shanshan,Li, Wendong,et al. Interface chemistry and electronic structure of ALD-derived HfAlO/Ge gate stacks revealed by X-ray photoelectron spectroscopy[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2017,716(无):1-6.
APA He, Gang.,Jiang, Shanshan.,Li, Wendong.,Zheng, Changyong.,He, Huaxin.,...&Liu, Mao.(2017).Interface chemistry and electronic structure of ALD-derived HfAlO/Ge gate stacks revealed by X-ray photoelectron spectroscopy.JOURNAL OF ALLOYS AND COMPOUNDS,716(无),1-6.
MLA He, Gang,et al."Interface chemistry and electronic structure of ALD-derived HfAlO/Ge gate stacks revealed by X-ray photoelectron spectroscopy".JOURNAL OF ALLOYS AND COMPOUNDS 716.无(2017):1-6.
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