Effect of gate voltage polarity on the ionic liquid gating behavior of NdNiO3/NdGaO3 heterostructures

doi:10.1063/1.4983617

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	Effect of gate voltage polarity on the ionic liquid gating behavior of NdNiO3/NdGaO3 heterostructures
	Dong, Yongqi 1,2; Xu, Haoran 3,4; Luo, Zhenlin 1; Zhou, Hua 5; Fong, Dillon D.2; Wu, Wenbin3,4 ; Gao, Chen 1
	2017-05-01
发表期刊	APL MATERIALS
摘要	The effect of gate voltage polarity on the behavior of NdNiO3 epitaxial thin films during ionic liquid gating is studied using in situ synchrotron X-ray techniques. We show that while negative biases have no discernible effect on the structure or composition of the films, large positive gate voltages result in the injection of a large concentration of oxygen vacancies (similar to 3%) and pronounced lattice expansion (0.17%) in addition to a 1000-fold increase in sheet resistance at room temperature. Despite the creation of large defect densities, the heterostructures exhibit a largely reversible switching behavior when sufficient time is provided for the vacancies to migrate in and out of the thin film surface. The results confirm that electrostatic gating takes place at negative gate voltages for p-type complex oxides while positive voltages favor the electrochemical reduction of Ni3+. Switching between positive and negative gate voltages therefore involves a combination of electronic and ionic doping processes that may be utilized in future electrochemical transistors. (C) 2017 Author(s).
文章类型	Article
WOS标题词	Science & Technology ; Technology ; Physical Sciences
DOI	10.1063/1.4983617
关键词[WOS]	NDNIO3 THIN-FILMS ; INSULATOR-TRANSITION ; ELECTRONIC-STRUCTURE ; CRYSTAL-STRUCTURE ; PEROVSKITES ; OXYGEN ; LANIO3 ; PHASE ; NONSTOICHIOMETRY ; MAGNETISM
收录类别	SCI
语种	英语
项目资助者	National Key Basic Research Program of China(2016YFA0300102 ; National Key Basic Research Program of China(2016YFA0300102 ; National Key Basic Research Program of China(2016YFA0300102 ; National Key Basic Research Program of China(2016YFA0300102 ; National Natural Science Foundation of China(11374010 ; National Natural Science Foundation of China(11374010 ; National Natural Science Foundation of China(11374010 ; National Natural Science Foundation of China(11374010 ; China Scholarship Council ; China Scholarship Council ; China Scholarship Council ; China Scholarship Council ; U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division ; U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division ; U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division ; U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division ; U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences(DE-AC02-06CH11357) ; U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences(DE-AC02-06CH11357) ; U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences(DE-AC02-06CH11357) ; U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences(DE-AC02-06CH11357) ; 2016YFA0401003) ; 2016YFA0401003) ; 2016YFA0401003) ; 2016YFA0401003) ; 11675179 ; 11675179 ; 11675179 ; 11675179 ; 11434009 ; 11434009 ; 11434009 ; 11434009 ; 11474263 ; 11474263 ; 11474263 ; 11474263 ; U1432251) ; U1432251) ; U1432251) ; U1432251)
WOS研究方向	Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000402754200002
引用统计	被引频次：20[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.hfcas.ac.cn:8080/handle/334002/31935
专题	中科院强磁场科学中心
作者单位	1.Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230026, Anhui, Peoples R China 2.Argonne Natl Lab, Mat Sci Div, Argonne, IL 60439 USA 3.Univ Sci & Technol China, CAS, High Magnet Field Lab, Hefei 230026, Peoples R China 4.Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Peoples R China 5.Argonne Natl Lab, Adv Photon Source, Argonne, IL 60439 USA
推荐引用方式 GB/T 7714	Dong, Yongqi,Xu, Haoran,Luo, Zhenlin,et al. Effect of gate voltage polarity on the ionic liquid gating behavior of NdNiO3/NdGaO3 heterostructures[J]. APL MATERIALS,2017,5(5):1-7.
APA	Dong, Yongqi.,Xu, Haoran.,Luo, Zhenlin.,Zhou, Hua.,Fong, Dillon D..,...&Gao, Chen.(2017).Effect of gate voltage polarity on the ionic liquid gating behavior of NdNiO3/NdGaO3 heterostructures.APL MATERIALS,5(5),1-7.
MLA	Dong, Yongqi,et al."Effect of gate voltage polarity on the ionic liquid gating behavior of NdNiO3/NdGaO3 heterostructures".APL MATERIALS 5.5(2017):1-7.

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