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Multilevel control of the metastable states in a manganite film
Jin, Feng1,2; Feng, Qiyuan1,2; Guo, Zhuang1,2; Lan, Da1,2; Chen, Binbin1,2; Xu, Haoran1,2; Wang, Ze1,2; Wang, Lingfei1,2; Gao, Guanyin1,2; Chen, Feng3; Lu, Qingyou1,2,3,4; Wu, Wenbin1,2,3,4
2017-06-28
发表期刊JOURNAL OF APPLIED PHYSICS
摘要For high density memory applications, the dynamic switching between multilevel resistance states per cell is highly desirable, and for oxide-based memory devices, the multistate operation has been actively explored. We have previously shown that for La2/3Ca1/3MnO3 films, the antiferromagnetic charge-ordered-insulator (COI) phase can be induced via the anisotropic epitaxial strain, and it competes with the doping-determined ferromagnetic-metal (FMM) ground state in a wide temperature range. Here, we show that for the phase competitions, in various magnetic fields and/or thermal cycling, the reappearance of the COI phase and thus the resistance and magnetization can be manipulated and quantified in a multilevel manner at lower temperatures. Furthermore, by using a high-field magnetic force microscope, we image the COI/FMM domain structures in accordance with the transport measurements, and find that the evolving domains or the phase fraction ratios do underline the metastability of the reappeared COI droplets, possibly protected by the energy barriers due to accommodation strain. These results may add new insights into the design and fabrication of future multilevel memory cells. Published by AIP Publishing.
文章类型Article
WOS标题词Science & Technology ; Physical Sciences
DOI10.1063/1.4989974
关键词[WOS]MAGNETIC FORCE MICROSCOPE ; THIN-FILMS ; ELECTRONIC PHASE ; PERCOLATION ; FIELD
收录类别SCI
语种英语
项目资助者NSF of China(11474263 ; NSF of China(11474263 ; NSF of China(11474263 ; NSF of China(11474263 ; NSF of China(11474263 ; NSF of China(11474263 ; NSF of China(11474263 ; NSF of China(11474263 ; National Basic Research Program of China(2015CB921201 ; National Basic Research Program of China(2015CB921201 ; National Basic Research Program of China(2015CB921201 ; National Basic Research Program of China(2015CB921201 ; National Basic Research Program of China(2015CB921201 ; National Basic Research Program of China(2015CB921201 ; National Basic Research Program of China(2015CB921201 ; National Basic Research Program of China(2015CB921201 ; Hefei Science Center CAS(2016HSC-IU006) ; Hefei Science Center CAS(2016HSC-IU006) ; Hefei Science Center CAS(2016HSC-IU006) ; Hefei Science Center CAS(2016HSC-IU006) ; Hefei Science Center CAS(2016HSC-IU006) ; Hefei Science Center CAS(2016HSC-IU006) ; Hefei Science Center CAS(2016HSC-IU006) ; Hefei Science Center CAS(2016HSC-IU006) ; 11574324 ; 11574324 ; 11574324 ; 11574324 ; 11574324 ; 11574324 ; 11574324 ; 11574324 ; 2016YFA0401003) ; 2016YFA0401003) ; 2016YFA0401003) ; 2016YFA0401003) ; 2016YFA0401003) ; 2016YFA0401003) ; 2016YFA0401003) ; 2016YFA0401003) ; U1432251) ; U1432251) ; U1432251) ; U1432251) ; U1432251) ; U1432251) ; U1432251) ; U1432251)
WOS研究方向Physics
WOS类目Physics, Applied
WOS记录号WOS:000404300600033
引用统计
被引频次:2[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.hfcas.ac.cn:8080/handle/334002/32017
专题中科院强磁场科学中心
作者单位1.Univ Sci & Technol China, Dept Phys, Hefei 230026, Peoples R China
2.Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Peoples R China
3.Chinese Acad Sci, High Field Magnet Lab, Hefei 230031, Peoples R China
4.Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China
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Jin, Feng,Feng, Qiyuan,Guo, Zhuang,et al. Multilevel control of the metastable states in a manganite film[J]. JOURNAL OF APPLIED PHYSICS,2017,121(24):1-7.
APA Jin, Feng.,Feng, Qiyuan.,Guo, Zhuang.,Lan, Da.,Chen, Binbin.,...&Wu, Wenbin.(2017).Multilevel control of the metastable states in a manganite film.JOURNAL OF APPLIED PHYSICS,121(24),1-7.
MLA Jin, Feng,et al."Multilevel control of the metastable states in a manganite film".JOURNAL OF APPLIED PHYSICS 121.24(2017):1-7.
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