Institutional Repository of Chinese Acad Sci, Inst Solid State Phys， Hefei 230031, Anhui, Peoples R China
| Annealing-temperature-modulated optical, electrical properties, and leakage current transport mechanism of sol-gel-processed high-k HfAlOX gate dielectrics | |
Jin, P.1; He, G.1; Fang, Z. B.2; Liu, M.3 ; Xiao, D. Q.1; Gao, J.1; Jiang, S. S.1; Li, W. D.1; Sun, Z. Q.1; Zhang, M.1,4
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| 2017-02-15 | |
| 发表期刊 | CERAMICS INTERNATIONAL
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| 摘要 | Deposition of HfAlOx gate dielectric films on n-type Si and quartz substrates by sol-gel technique has been performed and the optical, electrical characteristics of the as-deposited HfAlOx thin films as a function of annealing temperature have been investigated. The optical properties of HfAlOx thin films related to annealing temperature are investigated by ultraviolet-visible spectroscopy (UV-vis) and spectroscopy ellipsometry (SE). By measurement of UV-vis, average transmission of all the HfAlOx samples are about 85% owing to their uniform composition. And the increase in band gap has been observed with the increase of annealing temperature. Moreover, the increase of refractive index (n) and density with the increase of annealing temperature are obtained by SE measurements. Additionally, the electrical properties based on Al/Si/HfAlOx/Al capacitor are analyzed by means of the high frequency capacitance-voltage (C-V) and the leakage current density-voltage (J-V) characteristics. Results have shown that 400 degrees C-annealed sample demonstrates good electrical performance, including larger dielectric constant of 12.93 and lower leakage current density of 3.75x 10(-7) A/cm(2) at the gate voltage of 1 V. Additionally, the leakage current conduction mechanisms as functions of annealing temperatures are also discussed systematically. |
| 文章类型 | Article |
| 关键词 | High-k Hfalox Gate Dielectrics Sol-gel Optical Properties Electrical Properties Leakage Current Transport Mechanism |
| WOS标题词 | Science & Technology ; Technology |
| DOI | 10.1016/j.ceramint.2016.11.120 |
| 关键词[WOS] | THIN-FILMS ; INTERFACIAL PROPERTIES ; HFO2 FILMS ; MICROSTRUCTURE ; EVAPORATION ; NITRIDATION ; DEPOSITION |
| 收录类别 | SCI |
| 语种 | 英语 |
| 项目资助者 | National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Key Project of Fundamental Research(2013CB632705) ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Doctor Scientific Research Fund of Anhui University(J01001927) ; Doctor Scientific Research Fund of Anhui University(J01001927) ; Doctor Scientific Research Fund of Anhui University(J01001927) ; Doctor Scientific Research Fund of Anhui University(J01001927) ; Youth Core Teacher Fund of Anhui University(J01005111) ; Youth Core Teacher Fund of Anhui University(J01005111) ; Youth Core Teacher Fund of Anhui University(J01005111) ; Youth Core Teacher Fund of Anhui University(J01005111) ; Foundation of Co-operative Innovation Research Center for Weak Signal-Detecting Materials and Devices Integration Anhui University(Y01008411) ; Foundation of Co-operative Innovation Research Center for Weak Signal-Detecting Materials and Devices Integration Anhui University(Y01008411) ; Foundation of Co-operative Innovation Research Center for Weak Signal-Detecting Materials and Devices Integration Anhui University(Y01008411) ; Foundation of Co-operative Innovation Research Center for Weak Signal-Detecting Materials and Devices Integration Anhui University(Y01008411) ; 11474284 ; 11474284 ; 11474284 ; 11474284 ; 51272159) ; 51272159) ; 51272159) ; 51272159) |
| WOS研究方向 | Materials Science |
| WOS类目 | Materials Science, Ceramics |
| WOS记录号 | WOS:000392769600027 |
| 引用统计 | |
| 文献类型 | 期刊论文 |
| 条目标识符 | http://ir.hfcas.ac.cn:8080/handle/334002/32803 |
| 专题 | 中科院固体物理研究所 |
| 作者单位 | 1.Anhui Univ, Radiat Detect Mat & Devices Lab, Sch Phys & Mat Sci, Hefei 230601, Peoples R China 2.Shaoxing Univ, Dept Phys, Shaoxing 312000, Peoples R China 3.Chinese Acad Sci, Inst Solid State Phys, Anhui Key Lab Nanomat & Nanostruct, Key Lab Mat Phys, Hefei 230031, Peoples R China 4.Anhui Univ, Cooperat Innovat Res Ctr Weak Signal Detecting Ma, Hefei 230601, Peoples R China |
| 推荐引用方式 GB/T 7714 | Jin, P.,He, G.,Fang, Z. B.,et al. Annealing-temperature-modulated optical, electrical properties, and leakage current transport mechanism of sol-gel-processed high-k HfAlOX gate dielectrics[J]. CERAMICS INTERNATIONAL,2017,43(3):3101-3106. |
| APA | Jin, P..,He, G..,Fang, Z. B..,Liu, M..,Xiao, D. Q..,...&Zhang, M..(2017).Annealing-temperature-modulated optical, electrical properties, and leakage current transport mechanism of sol-gel-processed high-k HfAlOX gate dielectrics.CERAMICS INTERNATIONAL,43(3),3101-3106. |
| MLA | Jin, P.,et al."Annealing-temperature-modulated optical, electrical properties, and leakage current transport mechanism of sol-gel-processed high-k HfAlOX gate dielectrics".CERAMICS INTERNATIONAL 43.3(2017):3101-3106. |
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