Metal oxide semiconductor SERS-active substrates by defect engineering

doi:10.1039/c6an01959e

HFCAS OpenIR > 中科院固体物理研究所

	Metal oxide semiconductor SERS-active substrates by defect engineering
	Wu, Hao1 ; Wang, Hua1,2 ; Li, Guanghai1,2
	2017
发表期刊	ANALYST
摘要	A general route to transform metal oxide semiconductors from non-SERS active to SERS-active substrates based on defect engineering is reported. The SERS enhancement factor (EF) of metal oxide semiconductors like alpha-MoO3 and V2O5 can be greatly enhanced and the SERS performance can be optimized according to the detecting analyte and activating laser wavelength by introducing oxygen vacancy defects. The EF of R6G on alpha-MoO3-x nanobelts can be as high as 1.8 x 10(7) with a detection limit of 10(-8) M, which is the best among metal oxide semiconductors and comparable to noble metals without a "hot spot". A model, named "effective electric current model", was proposed to describe the photo-induced charge transfer process between the absorbed molecules and semiconductor substrates. The EF of 4-MBA, R6G and MB on alpha-MoO3-x nanobelts with different oxygen vacancy concentrations calculated based on the model matches very well with experimental results. As an extension, some potential metal oxide semiconductor SERS-active substrates were predicted based on the model. Our results clearly demonstrate that, through defect engineering, the metal oxide semiconductors can be made SERS-active substrates with high stability and high biocompatibility.
文章类型	Article
WOS标题词	Science & Technology ; Physical Sciences
DOI	10.1039/c6an01959e
关键词[WOS]	ENHANCED RAMAN-SCATTERING ; CHARGE-TRANSFER ; MOLYBDENUM TRIOXIDE ; GOLD NANOPARTICLES ; OXYGEN VACANCIES ; HOT-SPOTS ; SPECTROSCOPY ; MOLECULES ; TIO2 ; NANOSTRUCTURES
收录类别	SCI
语种	英语
项目资助者	National Basic Research Program of China(2013CB934304) ; National Basic Research Program of China(2013CB934304) ; National Basic Research Program of China(2013CB934304) ; National Basic Research Program of China(2013CB934304)
WOS研究方向	Chemistry
WOS类目	Chemistry, Analytical
WOS记录号	WOS:000393885900010
引用统计	被引频次：104[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.hfcas.ac.cn:8080/handle/334002/32850
专题	中科院固体物理研究所
作者单位	1.Chinese Acad Sci, Key Lab Mat Phys, Anhui Key Lab Nanomat & Nanotechnol, Inst Solid State Phys, Hefei 230031, Peoples R China 2.Univ Sci & Technol China, Sch Chem & Mat Sci, Hefei 230031, Peoples R China
推荐引用方式 GB/T 7714	Wu, Hao,Wang, Hua,Li, Guanghai. Metal oxide semiconductor SERS-active substrates by defect engineering[J]. ANALYST,2017,142(2):326-335.
APA	Wu, Hao,Wang, Hua,&Li, Guanghai.(2017).Metal oxide semiconductor SERS-active substrates by defect engineering.ANALYST,142(2),326-335.
MLA	Wu, Hao,et al."Metal oxide semiconductor SERS-active substrates by defect engineering".ANALYST 142.2(2017):326-335.

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