Institutional Repository of Chinese Acad Sci, Hefei Inst Phys Sci, Inst Appl Technol，Hefei 230031, Anhui, Peoples R China
| Identification and characterization of a new intermediate to obtain high quality perovskite films with hydrogen halides as additives | |
Duan, Bin1,2; Ren, Yingke3; Xu, Yafeng1,2; Chen, Wenyong1,2; Ye, Qing1,2; Huang, Yang1 ; Zhu, Jun1; Dai, Songyuan1,3
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| 2017-03-01 | |
| 发表期刊 | INORGANIC CHEMISTRY FRONTIERS
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| 摘要 | High quality perovskite films were fabricated from different precursor solutions containing a certain proportion of different hydrogen halides. An anti-solvent, toluene, was used here to isolate an intermediate from the perovskite precursor solution to reveal the impact of the hydrogen halides on the crystallization of perovskite films. From the Fourier transform infrared spectra we found that the stretch vibration of C=O for pure N,N-dimethylformamide (DMF) appeared at 1663 cm(-1) ,which was shifted to a smaller wavenumber while reacting DMF with CH3NH3I (MAI) + PbI2 and MAI + PbI2 + HX (X = Cl, Br, I). Moreover, the appearance of X-ray diffraction (XRD) peaks at low angles (near 8 degrees) as well as some small angle shift showed that the MAI-PbI2-DMF-xHX (X = Cl, Br, I) intermediate was formed, which benefits perovskite crystallization because the formation of the intermediate will avoid a rapid reaction between MAI and PbI2. What's more, the solubility of the precursor can be improved by adding hydrogen halides. By adding a certain amount of hydrogen halide into the one-step perovskite precursor solution we can obtain pin-hole free and almost no defect films. Transient absorption (TA) was carried out to investigate the charge recombination in intrinsic perovskite films and perovskite devices, giving some reasonable interpretations. |
| 文章类型 | Article |
| WOS标题词 | Science & Technology ; Physical Sciences |
| DOI | 10.1039/c6qi00492j |
| 关键词[WOS] | SOLUTION-PROCESSED PEROVSKITE ; TITANIUM-DIOXIDE PHOTOANODES ; HETEROJUNCTION SOLAR-CELLS ; CH3NH3PBI3 PEROVSKITE ; CHARGE-TRANSFER ; EXCITED-STATE ; EFFICIENT ; DYNAMICS ; IODIDE ; RECOMBINATION |
| 收录类别 | SCI |
| 语种 | 英语 |
| 项目资助者 | National Basic Research Program of China(2016YFA0202400 ; National Basic Research Program of China(2016YFA0202400 ; National Basic Research Program of China(2016YFA0202400 ; National Basic Research Program of China(2016YFA0202400 ; National Natural Science Foundation of China(21403247) ; National Natural Science Foundation of China(21403247) ; National Natural Science Foundation of China(21403247) ; National Natural Science Foundation of China(21403247) ; BIC ; BIC ; BIC ; BIC ; Chinese Academy of Sciences(GJHZ1607) ; Chinese Academy of Sciences(GJHZ1607) ; Chinese Academy of Sciences(GJHZ1607) ; Chinese Academy of Sciences(GJHZ1607) ; 2015CB932200) ; 2015CB932200) ; 2015CB932200) ; 2015CB932200) |
| WOS研究方向 | Chemistry |
| WOS类目 | Chemistry, Inorganic & Nuclear |
| WOS记录号 | WOS:000398182200009 |
| 引用统计 | |
| 文献类型 | 期刊论文 |
| 条目标识符 | http://ir.hfcas.ac.cn:8080/handle/334002/32903 |
| 专题 | 应用技术研究所 |
| 作者单位 | 1.Chinese Acad Sci, Hefei Inst Phys Sci, Inst Appl Technol, Key Lab Novel Thin Film Solar Cells, Hefei 230088, Anhui, Peoples R China 2.Univ Sci & Technol China, Hefei 230026, Peoples R China 3.North China Elect Power Univ, Beijing Key Lab Novel Thin Film Solar Cells, Beijing 102206, Peoples R China |
| 推荐引用方式 GB/T 7714 | Duan, Bin,Ren, Yingke,Xu, Yafeng,et al. Identification and characterization of a new intermediate to obtain high quality perovskite films with hydrogen halides as additives[J]. INORGANIC CHEMISTRY FRONTIERS,2017,4(3):473-480. |
| APA | Duan, Bin.,Ren, Yingke.,Xu, Yafeng.,Chen, Wenyong.,Ye, Qing.,...&Dai, Songyuan.(2017).Identification and characterization of a new intermediate to obtain high quality perovskite films with hydrogen halides as additives.INORGANIC CHEMISTRY FRONTIERS,4(3),473-480. |
| MLA | Duan, Bin,et al."Identification and characterization of a new intermediate to obtain high quality perovskite films with hydrogen halides as additives".INORGANIC CHEMISTRY FRONTIERS 4.3(2017):473-480. |
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