Thickness-tuned transition of band topology in ZrTe5 nanosheets

doi:10.1103/PhysRevB.95.125135

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	Thickness-tuned transition of band topology in ZrTe5 nanosheets
	Lu, Jianwei 1,2; Zheng, Guolin 1,2; Zhu, Xiangde1 ; Ning, Wei1,3 ; Zhang, Hongwei 1,2; Yang, Jiyong 1; Du, Haifeng1,3 ; Yang, Kun 4; Lu, Haizhou 5; Zhang, Yuheng1,2,3 ; Tian, Mingliang1,2,3
	2017-03-29
发表期刊	PHYSICAL REVIEW B
摘要	We report thickness-tuned electrical transport in highly anisotropic three-dimensional Dirac semimetal ZrTe5 nanosheets with thickness down to 10 nm. We find that the resistivity peak temperature T* can be significantly tuned by the nanosheet thickness. When the thickness is reduced from 160 to 40 nm, T* reduces systematically from 145 to 100 K. However, with the thickness further reducing to 10 nm, T* shifts up to a higher temperature. From our analysis, the system transitions from a topological semimetal with two types of carriers to a single band with conventional hole carriers when the thickness is less than 40 nm. Furthermore, by tracking the thickness dependence of the carrier density, we find that the Fermi level shifts continuously downward from the conduction band to the valence band with decreasing the thickness. Our experiment reveals a thickness-tuned transition of band topology in ZrTe5 nanosheets which may be helpful for the understanding of the contrast observations in this material.
文章类型	Article
WOS标题词	Science & Technology ; Physical Sciences
DOI	10.1103/PhysRevB.95.125135
关键词[WOS]	DIRAC SEMIMETAL ; CD3AS2 ; HFTE5
收录类别	SCI
语种	英语
项目资助者	Natural Science Foundation of China(11574320 ; Natural Science Foundation of China(11574320 ; Natural Science Foundation of China(11574320 ; Natural Science Foundation of China(11574320 ; Natural Science Foundation of China(11574320 ; Natural Science Foundation of China(11574320 ; Natural Science Foundation of China(11574320 ; Natural Science Foundation of China(11574320 ; National Key Research and Development Program of China(2016YFA0401003) ; National Key Research and Development Program of China(2016YFA0401003) ; National Key Research and Development Program of China(2016YFA0401003) ; National Key Research and Development Program of China(2016YFA0401003) ; National Key Research and Development Program of China(2016YFA0401003) ; National Key Research and Development Program of China(2016YFA0401003) ; National Key Research and Development Program of China(2016YFA0401003) ; National Key Research and Development Program of China(2016YFA0401003) ; program of Users with Excellence ; program of Users with Excellence ; program of Users with Excellence ; program of Users with Excellence ; program of Users with Excellence ; program of Users with Excellence ; program of Users with Excellence ; program of Users with Excellence ; Hefei Science Center of CAS ; Hefei Science Center of CAS ; Hefei Science Center of CAS ; Hefei Science Center of CAS ; Hefei Science Center of CAS ; Hefei Science Center of CAS ; Hefei Science Center of CAS ; Hefei Science Center of CAS ; CAS/SAFEA international partnership program for creative research teams of China ; CAS/SAFEA international partnership program for creative research teams of China ; CAS/SAFEA international partnership program for creative research teams of China ; CAS/SAFEA international partnership program for creative research teams of China ; CAS/SAFEA international partnership program for creative research teams of China ; CAS/SAFEA international partnership program for creative research teams of China ; CAS/SAFEA international partnership program for creative research teams of China ; CAS/SAFEA international partnership program for creative research teams of China ; National Science Foundation(DMR-1004545 ; National Science Foundation(DMR-1004545 ; National Science Foundation(DMR-1004545 ; National Science Foundation(DMR-1004545 ; National Science Foundation(DMR-1004545 ; National Science Foundation(DMR-1004545 ; National Science Foundation(DMR-1004545 ; National Science Foundation(DMR-1004545 ; 11174294 ; 11174294 ; 11174294 ; 11174294 ; 11174294 ; 11174294 ; 11174294 ; 11174294 ; DMR-1442366) ; DMR-1442366) ; DMR-1442366) ; DMR-1442366) ; DMR-1442366) ; DMR-1442366) ; DMR-1442366) ; DMR-1442366) ; 11374302 ; 11374302 ; 11374302 ; 11374302 ; 11374302 ; 11374302 ; 11374302 ; 11374302 ; 11204312 ; 11204312 ; 11204312 ; 11204312 ; 11204312 ; 11204312 ; 11204312 ; 11204312 ; 11474289 ; 11474289 ; 11474289 ; 11474289 ; 11474289 ; 11474289 ; 11474289 ; 11474289 ; U1432251) ; U1432251) ; U1432251) ; U1432251) ; U1432251) ; U1432251) ; U1432251) ; U1432251)
WOS研究方向	Physics
WOS类目	Physics, Condensed Matter
WOS记录号	WOS:000399142500003
引用统计	被引频次：20[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.hfcas.ac.cn:8080/handle/334002/32951
专题	中科院强磁场科学中心
作者单位	1.Chinese Acad Sci, High Field Magnet Lab, Hefei 230031, Anhui, Peoples R China 2.Univ Sci & Technol China, Dept Phys, Hefei 230026, Peoples R China 3.Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China 4.Florida State Univ, Natl High Magnet Field Lab, Tallahassee, FL 32306 USA 5.South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China
第一作者单位	中科院强磁场科学中心
推荐引用方式 GB/T 7714	Lu, Jianwei,Zheng, Guolin,Zhu, Xiangde,et al. Thickness-tuned transition of band topology in ZrTe5 nanosheets[J]. PHYSICAL REVIEW B,2017,95(12):1-4.
APA	Lu, Jianwei.,Zheng, Guolin.,Zhu, Xiangde.,Ning, Wei.,Zhang, Hongwei.,...&Tian, Mingliang.(2017).Thickness-tuned transition of band topology in ZrTe5 nanosheets.PHYSICAL REVIEW B,95(12),1-4.
MLA	Lu, Jianwei,et al."Thickness-tuned transition of band topology in ZrTe5 nanosheets".PHYSICAL REVIEW B 95.12(2017):1-4.

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