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Few-Layered PtS2 Phototransistor on h-BN with High Gain
Li, Liang1; Wang, Weike2; Chai, Yang3; Li, Huiqiao1; Tian, Mingliang2; Zhai, Tianyou1,4,5
2017-07-19
Source PublicationADVANCED FUNCTIONAL MATERIALS
Volume27Issue:27
AbstractThe very recently rediscovered group-10 transition metal dichalcogenides (TMDs) such as PtS2 and PtSe2, have joined the 2D material family as potentially promising candidates for electronic and optoeletronic applications due to their theoretically high carrier mobility, widely tunable bandgap, and ultrastability. Here, the first exploration of optoelectronic application based on few-layered PtS2 using h-BN as substrate is presented. The phototransistor exhibits high responsivity up to 1.56 x 10(3) A W-1 and detectivity of 2.9 x 10(11) Jones. Additionally, an ultrahigh photogain approximate to 2 x 10(6) is obtained at a gate voltage V-g = 30 V, one of the highest gain among 2D photodetectors, which is attributed to the existence of trap states. More interestingly, the few-layered PtS2 phototransistor shows a back gate modulated photocurrent generation mechanism, that is, from the photoconductive effect dominant to photogating effect dominant via tuning the gate voltage from the OFF state to the ON state. Such good properties combined with gate-controlled photoresponse of PtS2 make it a competitive candidate for future 2D optoelectronic applications.
SubtypeArticle
KeywordPts2 Photocurrent Generation Mechanisms Photogain Phototransistors Transition Metal Dichalcogenides
WOS HeadingsScience & Technology ; Physical Sciences ; Technology
Funding OrganizationNational Natural Science Foundation of China(91622117 ; National Natural Science Foundation of China(91622117 ; National Key Research and Development Program of "Strategic Advanced Electronic Materials"(2016YFB0401100) ; National Key Research and Development Program of "Strategic Advanced Electronic Materials"(2016YFB0401100) ; National Basic Research Foundation of China(2015CB932600) ; National Basic Research Foundation of China(2015CB932600) ; Program for HUST Interdisciplinary Innovation Team(2015ZDTD038) ; Program for HUST Interdisciplinary Innovation Team(2015ZDTD038) ; China Postdoctoral Science Foundation(2015LH0018) ; China Postdoctoral Science Foundation(2015LH0018) ; Fundamental Research Funds for the Central University ; Fundamental Research Funds for the Central University ; 51472097) ; 51472097) ; National Natural Science Foundation of China(91622117 ; National Natural Science Foundation of China(91622117 ; National Key Research and Development Program of "Strategic Advanced Electronic Materials"(2016YFB0401100) ; National Key Research and Development Program of "Strategic Advanced Electronic Materials"(2016YFB0401100) ; National Basic Research Foundation of China(2015CB932600) ; National Basic Research Foundation of China(2015CB932600) ; Program for HUST Interdisciplinary Innovation Team(2015ZDTD038) ; Program for HUST Interdisciplinary Innovation Team(2015ZDTD038) ; China Postdoctoral Science Foundation(2015LH0018) ; China Postdoctoral Science Foundation(2015LH0018) ; Fundamental Research Funds for the Central University ; Fundamental Research Funds for the Central University ; 51472097) ; 51472097)
DOI10.1002/adfm.201701011
WOS KeywordFIELD-EFFECT TRANSISTORS ; TRANSITION-METAL DICHALCOGENIDES ; CHEMICAL-VAPOR-DEPOSITION ; HIGH-PERFORMANCE ; BLACK PHOSPHORUS ; PHOTOCURRENT GENERATION ; INFRARED PHOTODETECTOR ; GRAPHENE ELECTRONICS ; INTERNAL GAIN ; MOS2
Indexed BySCI
Language英语
Funding OrganizationNational Natural Science Foundation of China(91622117 ; National Natural Science Foundation of China(91622117 ; National Key Research and Development Program of "Strategic Advanced Electronic Materials"(2016YFB0401100) ; National Key Research and Development Program of "Strategic Advanced Electronic Materials"(2016YFB0401100) ; National Basic Research Foundation of China(2015CB932600) ; National Basic Research Foundation of China(2015CB932600) ; Program for HUST Interdisciplinary Innovation Team(2015ZDTD038) ; Program for HUST Interdisciplinary Innovation Team(2015ZDTD038) ; China Postdoctoral Science Foundation(2015LH0018) ; China Postdoctoral Science Foundation(2015LH0018) ; Fundamental Research Funds for the Central University ; Fundamental Research Funds for the Central University ; 51472097) ; 51472097) ; National Natural Science Foundation of China(91622117 ; National Natural Science Foundation of China(91622117 ; National Key Research and Development Program of "Strategic Advanced Electronic Materials"(2016YFB0401100) ; National Key Research and Development Program of "Strategic Advanced Electronic Materials"(2016YFB0401100) ; National Basic Research Foundation of China(2015CB932600) ; National Basic Research Foundation of China(2015CB932600) ; Program for HUST Interdisciplinary Innovation Team(2015ZDTD038) ; Program for HUST Interdisciplinary Innovation Team(2015ZDTD038) ; China Postdoctoral Science Foundation(2015LH0018) ; China Postdoctoral Science Foundation(2015LH0018) ; Fundamental Research Funds for the Central University ; Fundamental Research Funds for the Central University ; 51472097) ; 51472097)
WOS Research AreaChemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS SubjectChemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS IDWOS:000405926800012
Citation statistics
Cited Times:43[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.hfcas.ac.cn:8080/handle/334002/33538
Collection中科院强磁场科学中心
Affiliation1.Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Hubei, Peoples R China
2.Chinese Acad Sci, High Magnet Field Lab, Hefei 230031, Anhui, Peoples R China
3.Hong Kong Polytech Univ, Dept Appl Phys, Kowloon 999077, Hong Kong, Peoples R China
4.Tianjin Univ, Dept Chem, Tianjin Key Lab Mol Optoelect Sci, Tianjin 300072, Peoples R China
5.Collaborat Innovat Ctr Chem Sci & Engn Tianjin, Tianjin 300072, Peoples R China
Recommended Citation
GB/T 7714
Li, Liang,Wang, Weike,Chai, Yang,et al. Few-Layered PtS2 Phototransistor on h-BN with High Gain[J]. ADVANCED FUNCTIONAL MATERIALS,2017,27(27).
APA Li, Liang,Wang, Weike,Chai, Yang,Li, Huiqiao,Tian, Mingliang,&Zhai, Tianyou.(2017).Few-Layered PtS2 Phototransistor on h-BN with High Gain.ADVANCED FUNCTIONAL MATERIALS,27(27).
MLA Li, Liang,et al."Few-Layered PtS2 Phototransistor on h-BN with High Gain".ADVANCED FUNCTIONAL MATERIALS 27.27(2017).
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