Annealing temperature-dependent microstructure and optical and electrical properties of solution-derived Gd-doped ZrO2 high-k gate dielectrics

doi:10.1007/s10971-017-4468-y

HFCAS OpenIR > 中科院固体物理研究所

	Annealing temperature-dependent microstructure and optical and electrical properties of solution-derived Gd-doped ZrO2 high-k gate dielectrics
	Zhu, L.1; He, G.1; Sun, Z. Q.1; Liu, M.2 ; Jiang, S. S.1; Liang, S.1; Li, W. D.1
	2017-09-01
发表期刊	JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY
摘要	In current work, the microstructure and optical and electrical properties of sol-gel-derived Gd-doped ZrO2 gate dielectric thin films as functions of annealing temperatures were systemically investigated. Analyzes by x-ray diffraction have indicated that the 240 A degrees C-baked sample as well as those samples annealed at lower temperatures keep amorphous state. In the sample annealed at 500 A degrees C, however, the amorphous phase disappears and tetragonal ZrO2 is formed. Measurements from ultraviolet-visible spectroscopy (UV/Vis) have demonstrated that transmittance of all samples in the visible region is approximately 80% and the increase in band gap energy has been found with increasing the annealing temperature. Electrical properties of all samples based on Al/Si/ZrGdOx/Al MOS capacitor have been investigated by using semiconductor device analyzer. Through the analysis and calculation of the electrical characteristic curves, solution-processed Al/ZrGdOx/Si/Al capacitor shows improved performances at a annealing temperature of 400 A degrees C, such as high dielectric constant (k) of 16.56, lowest oxidation charge density (Q (ox)) of -0.74 x 10(12) cm(-2), and boundary trap oxidation charge density (N (bt)) of 3.17 x 10(12) cm(-2). In addition, the leakage current mechanism for 400 A degrees C-annealed sample has been discussed in detail.
文章类型	Article
关键词	Gd-doped Zro2 Gate Dielectric Thin Films Annealing Temperature Sol-gel Optical Properties Electrical Properties
WOS标题词	Science & Technology ; Technology
DOI	10.1007/s10971-017-4468-y
关键词[WOS]	ATOMIC LAYER DEPOSITION ; OXIDE THIN-FILMS ; INTERFACIAL PROPERTIES ; PLASMA-OXIDATION ; HFO2 ; TRANSISTORS ; MODULATION ; SILICON ; TIO2 ; ALD
收录类别	SCI
语种	英语
项目资助者	National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; Anhui Provincial Natural Science Foundation(1608085MA06) ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; 11474284) ; 11474284)
WOS研究方向	Materials Science
WOS类目	Materials Science, Ceramics
WOS记录号	WOS:000407375500021
引用统计	被引频次：12[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.hfcas.ac.cn:8080/handle/334002/33555
专题	中科院固体物理研究所
作者单位	1.Anhui Univ, Sch Phys & Mat Sci, Radiat Detect Mat & Devices Lab, Hefei 230601, Anhui, Peoples R China 2.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Anhui Key Lab Nanomat & Nanostruct, Hefei 230031, Peoples R China
推荐引用方式 GB/T 7714	Zhu, L.,He, G.,Sun, Z. Q.,et al. Annealing temperature-dependent microstructure and optical and electrical properties of solution-derived Gd-doped ZrO2 high-k gate dielectrics[J]. JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY,2017,83(3):675-682.
APA	Zhu, L..,He, G..,Sun, Z. Q..,Liu, M..,Jiang, S. S..,...&Li, W. D..(2017).Annealing temperature-dependent microstructure and optical and electrical properties of solution-derived Gd-doped ZrO2 high-k gate dielectrics.JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY,83(3),675-682.
MLA	Zhu, L.,et al."Annealing temperature-dependent microstructure and optical and electrical properties of solution-derived Gd-doped ZrO2 high-k gate dielectrics".JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY 83.3(2017):675-682.